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SST39SF010A-70-4I-WHE-T

Microchip Technology

SST39SF010A-70-4I-WHE-T by Microchip Technology

SST39SF010A-70-4I-WHE-T by Microchip: 128KX8 NOR Flash Memory with 3-STATE output, operates at -40 to 85 °C. Ideal for industrial applications, featuring 100000 Write/Erase Cycles and 70 ns Access Time. Package style is small outline, thin profile with shrink pitch.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,860 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Corohmni

South Africa . 900 parts In-Stock

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$4.760

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900

$4.760

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Aztec Data Supply Inc.

USA . 96 parts In-Stock

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$4.913

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96

$4.913

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AZTECH Wire

Italy . 524 parts In-Stock

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$5.668

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524

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Microchip USA

USA . 2,424 parts In-Stock

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$8.818

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2,424

$8.818

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Ampacity Inc.

Singapore . 562 parts In-Stock

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$23.000

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562

$23.000

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Semicontronic

India . 949 parts In-Stock

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$29.000

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$28.275

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$28.130

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949

$29.000

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$28.130

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Continental Prestige Electronics

USA . 6,219 parts In-Stock

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RGB Technical Solutions

Ukraine . 4,152 parts In-Stock

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Argo Parts USA

USA . 907 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Bastille Electronics

Australia . 86 parts In-Stock

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Overview

Unlock the power of reliable and high-quality flash memory with the SST39SF010A-70-4I-WHE-T by Microchip Technology. As a leader in the industry, Microchip Technology delivers cutting-edge solutions for a wide range of applications. This flash memory device offers customers unmatched value, benefits, and advantages, providing 100,000 write/erase cycles and fast access times. Trust in Microchip Technology to deliver top-of-the-line products that meet your memory storage needs with ease and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory, making it a reliable choice.

Surface Mount: YES

Being surface mountable, this flash memory is easy to install and suitable for compact devices.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient use of space in electronic designs.

Operating Mode: ASYNCHRONOUS

The asynchronous operation mode provides flexibility and allows for quick access to data.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage ensures stable performance and compatibility with a wide range of devices.

Power Supplies (V): 5

With a 5V power supply, this flash memory can operate efficiently and reliably.

No. of Terminals: 32

The 32 terminals offer ample connections for seamless integration into various electronic systems.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small and thin profile design of the package saves space and enhances portability.

Maximum Operating Temperature: 85 °C

The flash memory can withstand high temperatures, ensuring reliable operation even in demanding conditions.

Organization: 128KX8

The 128KX8 organization provides sufficient memory capacity for storing data.

Output Characteristics: 3-STATE

The 3-STATE output allows for efficient data transfer and reduced power consumption.

Minimum Operating Temperature: -40 °C

The flash memory can function in low temperatures, making it suitable for a wide range of environments.

No. of Sectors/Size: 32

The 32 sectors offer convenient data organization and management.

Terminal Finish: MATTE TIN

The matte tin finish provides corrosion resistance and ensures reliable connections.

Terminal Position: DUAL

The dual terminal position allows for flexibility in mounting and installation.

Maximum Seated Height: 1.2 mm

The compact height of the flash memory makes it suitable for slim electronic devices.

Width: 8 mm

The 8mm width of the flash memory enables easy integration into various electronic designs.

Minimum Supply Voltage (Vsup): 4.5 V

With a minimum supply voltage of 4.5V, this flash memory can operate efficiently even at lower power levels.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures secure soldering and reliable connections during manufacturing.

Type: NOR TYPE

The NOR type flash memory offers fast read and write speeds, making it ideal for applications requiring high-performance memory.

Length: 12.4 mm

The 12.4mm length of the flash memory allows for easy placement and installation in electronic devices.

Programming Voltage (V): 5

The 5V programming voltage simplifies the programming process and ensures accurate data storage.

Temperature Grade: INDUSTRIAL

The industrial-grade temperature rating ensures reliable operation in harsh environments.

Technology: CMOS

The CMOS technology used in this flash memory delivers low power consumption and high-speed performance.

Parallel or Serial: PARALLEL

The parallel interface offers fast data transfer speeds and efficient communication with the host device.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections and ease of soldering during assembly.

Sector Size (Words): 4K

The 4K sector size allows for efficient data management and organization within the flash memory.

Maximum Supply Current: 35 mA

With a maximum supply current of 35mA, this flash memory operates efficiently while conserving power.

No. of Words: 131072 words

The 131072 words capacity provides ample storage space for data storage and retrieval.

Toggle Bit: YES

The toggle bit feature enhances data protection and error correction capabilities, ensuring data integrity.

Memory Width: 8

The 8-bit memory width offers compatibility with a wide range of systems and applications.

Minimum Data Retention Time: 100

The 100-year minimum data retention time ensures long-term reliability and data integrity.

Terminal Pitch: 0.5 mm

The 0.5mm terminal pitch allows for compact spacing and efficient layout in electronic designs.

No. of Words Code: 128K

The 128K words code provides a large memory capacity for storing data.

Command User Interface: YES

The command user interface allows for easy and efficient control of the flash memory operations.

Moisture Sensitivity Level (MSL): 3

With an MSL of 3, this flash memory is resilient to moisture exposure during manufacturing and storage.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5V ensures safe operation and protects the flash memory from overvoltage.

Endurance: 100000 Write/Erase Cycles

The high endurance rating of 100,000 write/erase cycles ensures long-lasting performance and data reliability.

Memory Density: 1048576 bit

The 1,048,576-bit memory density offers ample storage space for storing various types of data.

Memory IC Type: FLASH

The flash memory IC type provides fast access speeds and reliable data storage for a wide range of applications.

Maximum Standby Current: 0.0001 Amp

With a maximum standby current of 0.0001 Amp, this flash memory conserves power during idle periods.

Maximum Access Time: 70 ns

The fast access time of 70ns ensures quick data retrieval and responsive performance.

Data Polling: YES

The data polling feature allows for efficient data transfer and verification processes.

Technical Specifications

Flash Memory SST39SF010A-70-4I-WHE-T attributes and parameters. Explore more Flash Memory devices from Microchip Technology

Specs

Maximum Access Time:

70 ns

Command User Interface:

YES

Data Polling:

YES

Minimum Data Retention Time:

100

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e3

Length:

12.4 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Sectors/Size:

32

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.56,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

4K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

SST39SF010A-70-4I-WHE-T Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.1.A

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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