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MT29F4G08ABADAH4-ITX:D

Micron Technology

MT29F4G08ABADAH4-ITX:D by Micron Technology

MT29F4G08ABADAH4-ITX:D by Micron Technology is a 512Mx8 SLC NAND flash memory with 4K sectors and 128K word sector size. Operating at -40 to 85°C, it has a peak reflow temp of 260°C and consumes max 35mA current. Ideal for industrial applications requiring fast access time of 25ns and high memory density of 4294967296 bits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 4,656 parts In-Stock

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4,656

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Vyrian

USA . 2,496 parts In-Stock

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2,496

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Digiode

USA . 793 parts In-Stock

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793

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Nova Conductors

Japan . 58 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 577 parts In-Stock

1+ parts

$9.068

100+ parts

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577

$9.068

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Ampacity Inc.

Singapore . 813 parts In-Stock

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$25.000

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813

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Argo Parts USA

USA . 3,587 parts In-Stock

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3,587

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Continental Prestige Electronics

USA . 2,661 parts In-Stock

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Corphita

USA . 1,032 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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1,000

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Perfect Parts

USA . 974 parts In-Stock

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974

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Microchip USA

USA . 355 parts In-Stock

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Overview

Experience the ultimate in reliable and high-performance flash memory with the MT29F4G08ABADAH4-ITX:D by Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers top-quality products for a wide range of applications. This Flash Memory device offers exceptional value with its advanced features and benefits, making it an ideal choice for those looking for superior performance and reliability. Whether you're a tech enthusiast or a professional seeking top-notch memory solutions, the MT29F4G08ABADAH4-ITX:D is sure to exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory, making it a reliable choice.

Surface Mount: YES

The surface mount feature allows for easy and efficient installation of the flash memory onto circuit boards.

Package Shape: RECTANGULAR

The rectangular shape of the package makes it compatible with a wide range of electronic devices.

Power Supplies (V): 3/3.3

The dual power supply options provide flexibility for use with different systems and applications.

No. of Terminals: 63

The high number of terminals allows for efficient data transfer and communication within the flash memory.

Package Style (Meter): GRID ARRAY, FINE PITCH

The fine pitch grid array style enables compact and space-saving integration in electronic devices.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures the flash memory can function reliably in various environmental conditions.

Organization: 512MX8

The organization of 512MX8 helps optimize data storage and retrieval processes for improved performance.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures the flash memory remains operational even in extreme cold conditions.

No. of Sectors/Size: 4K

The 4K sector size allows for efficient data organization and management within the flash memory.

Terminal Finish: TIN SILVER COPPER

The combination of tin, silver, and copper terminal finish provides strong connectivity and conductivity for better performance.

Terminal Position: BOTTOM

The bottom terminal position allows for easy and secure connection of the flash memory to circuit boards.

Page Size (words): 2K

The 2K page size facilitates efficient data transfer and storage within the flash memory.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature helps prevent overheating and ensures the longevity of the flash memory.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance ensures the flash memory can withstand soldering processes during installation.

Type: SLC NAND TYPE

The SLC NAND type offers high performance and reliability, making it a preferred choice for demanding applications.

Temperature Grade: INDUSTRIAL

The industrial-grade temperature tolerance ensures the flash memory can operate efficiently in harsh industrial environments.

Technology: CMOS

The CMOS technology enhances power efficiency and performance of the flash memory.

Parallel or Serial: PARALLEL

The parallel data transfer mode allows for fast and simultaneous communication within the flash memory.

Terminal Form: BALL

The ball terminal form provides secure and stable connections for reliable data transfer within the flash memory.

Sector Size (Words): 128K

The 128K sector size allows for efficient data management and retrieval within the flash memory.

Maximum Supply Current: 35 mA

The low maximum supply current consumption helps conserve energy and prolong the battery life of electronic devices.

No. of Words: 536870912 words

The high number of words capacity ensures ample storage space for data and files in the flash memory.

Memory Width: 8

The 8-bit memory width facilitates efficient data processing and storage within the flash memory.

Terminal Pitch: 0.8 mm

The small terminal pitch size enables compact and space-efficient design integration of the flash memory.

No. of Words Code: 512M

The 512M words code enhances data organization and retrieval processes within the flash memory.

Command User Interface: YES

The command user interface feature allows for easy and flexible control and management of the flash memory.

Ready or Busy: YES

The readiness status indicator helps monitor the operational status of the flash memory for optimal performance.

Memory Density: 4294967296 bit

The high memory density offers ample storage capacity for large volumes of data in the flash memory.

Memory IC Type: FLASH

The flash memory IC type provides fast and reliable data storage and retrieval capabilities.

Maximum Standby Current: 0.0001 Amp

The low maximum standby current consumption helps conserve power when the flash memory is idle.

Maximum Access Time: 25 ns

The fast maximum access time enables quick data retrieval and processing within the flash memory.

Technical Specifications

Flash Memory MT29F4G08ABADAH4-ITX:D attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

25 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B63

JESD-609 Code:

e1

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

8

No. of Sectors/Size:

4K

No. of Terminals:

63

No. of Words:

536870912 words

No. of Words Code:

512M

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA63,10X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Page Size (words):

2K

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Ready or Busy:

YES

Sector Size (Words):

128K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

35 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

SLC NAND TYPE

Trade Compliance

MT29F4G08ABADAH4-ITX:D Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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