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INDUSTRIAL Flash Memory 964

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
M29W128GSL70ZA6E by Micron Technology

M29W128GSL70ZA6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: BGA; Package Shape: SQUARE; Organization: 8MX16;

70 ns

8

YES

YES

YES

S-PBGA-B64

134217728 bit

FLASH

16

128

64

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

8/16

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

YES

NOR TYPE

M29W128GSL70ZS6E by Micron Technology

M29W128GSL70ZS6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: BGA; Package Shape: SQUARE; Package Equivalence Code: BGA64,8X8,40;

70 ns

8

YES

YES

YES

S-PBGA-B64

134217728 bit

FLASH

16

128

64

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

8/16

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

YES

NOR TYPE

PC28F256P30TFE by Micron Technology

PC28F256P30TFE

Micron Technology

Micron Technology's PC28F256P30TFE is a 16Mx16 NOR flash memory with 1.8V supply, operating at -40 to 85°C. It features synchronous operation, 16K/64K sector sizes, and a common flash interface. Ideal for industrial applications requiring fast access times and low standby current.

100 ns

TOP

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

W25Q64CVSSIG by Winbond Electronics

W25Q64CVSSIG

Winbond Electronics

W25Q64CVSSIG by Winbond Electronics is a NOR flash memory with 8MX8 organization, operating at 80 MHz. It features a small outline package and SPI serial bus type, suitable for industrial applications requiring high endurance of 100000 Write/Erase cycles. With a max clock frequency of 80 MHz and low standby current of 0.000005 Amp, it offers reliable performance in various electronic devices.

8.5 ns

80 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

5.28 mm

67108864 bit

FLASH

8

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

2.16 mm

SPI

.000005 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5.28 mm

HARDWARE/SOFTWARE

SST39VF3202C-70-4I-B3KE by Microchip Technology

SST39VF3202C-70-4I-B3KE

Microchip Technology

SST39VF3202C-70-4I-B3KE by Microchip: 2MX16 Flash Memory with 3V supply, 70ns access time. Ideal for industrial applications, offers 100K write/erase cycles and operates in asynchronous mode.

70 ns

TOP BOOT-BLOCK

TOP

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

33554432 bit

FLASH

16

3

1

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

4K,32K

.00005 Amp

Flash Memories

45 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

40

YES

NOR TYPE

6 mm

N25Q128A13B1240E by Micron Technology

N25Q128A13B1240E

Micron Technology

N25Q128A13B1240E by Micron Technology is a NOR type flash memory with 16MX8 organization and a memory density of 134217728 bits. It operates at a max clock frequency of 108 MHz and has a min data retention time of 20 years. This flash memory is commonly used in industrial applications for its high endurance of 100000 write/erase cycles.

BOTTOM

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

134217728 bit

FLASH

8

1

24

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

1.2 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A13BF840E by Micron Technology

N25Q128A13BF840E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Parallel or Serial: SERIAL;

BOTTOM

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

8 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/3.3

3

Not Qualified

1 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A13BSF40G by Micron Technology

N25Q128A13BSF40G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; No. of Words: 16777216 words;

BOTTOM

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

134217728 bit

FLASH

8

1

16

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/3.3

3

Not Qualified

2.65 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

N25Q128A13TF840E by Micron Technology

N25Q128A13TF840E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

TOP

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

8 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/3.3

3

Not Qualified

1 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A13TSF40G by Micron Technology

N25Q128A13TSF40G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Boot Block: TOP;

TOP

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

134217728 bit

FLASH

8

1

16

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/3.3

3

Not Qualified

2.65 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

N25Q128A23B1240E by Micron Technology

N25Q128A23B1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 8;

BOTTOM

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

134217728 bit

FLASH

8

1

24

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

1.2 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A23BF840E by Micron Technology

N25Q128A23BF840E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; No. of Words Code: 16M;

BOTTOM

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

8 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/3.3

3

Not Qualified

1 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A23BSF40G by Micron Technology

N25Q128A23BSF40G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

BOTTOM

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

134217728 bit

FLASH

8

1

16

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/3.3

3

Not Qualified

2.65 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

RC28F640P33TF60A by Micron Technology

RC28F640P33TF60A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Power Supplies (V): 2.5/3.3;

60 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

TOP

YES

YES

NO

R-PBGA-B64

e0

10 mm

67108864 bit

FLASH

16

1

4,63

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

8

PARALLEL

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

NO

NOR TYPE

8 mm

NAND512W3A2SN6E by Micron Technology

NAND512W3A2SN6E

Micron Technology

Micron's NAND512W3A2SN6E is a 64MX8 SLC NAND flash memory with 536870912-bit density. Operating at 3V, it has a temp range of -40 to 85°C and uses parallel interface with 0.5mm pitch. Ideal for industrial applications, this compact chip measures 18.4mm x 12mm x 1.2mm and features Ni/Pd/Au finish on dual terminals.

R-PDSO-G48

e4

18.4 mm

536870912 bit

FLASH

8

3

1

48

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3

Not Qualified

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

JS28F128P30BF75A by Micron Technology

JS28F128P30BF75A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

75 ns

BOTTOM

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

1

4,127

56

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000055 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

PC28F256P30BFE by Micron Technology

PC28F256P30BFE

Micron Technology

Micron Technology's PC28F256P30BFE is a 16Mx16 NOR flash memory with 1.8V supply, operating at -40 to 85°C. Featuring synchronous mode, it has 4 sectors of 255 words each and supports common flash interface. Ideal for industrial applications requiring fast access time and low standby current.

100 ns

ASYNCHRONOUS READ MODE

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

MTFDCAE001SAF-1D1IT by Micron Technology

MTFDCAE001SAF-1D1IT

Micron Technology

FLASH MODULE; Temperature Grade: INDUSTRIAL; Package Code: XMA; Package Shape: RECTANGULAR; No. of Words Code: 1G; Minimum Operating Temperature: -40 Cel;

R-XXMA-X

36.9 mm

8589934592 bit

FLASH MODULE

8

1

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

5

9.7 mm

.06 Amp

120 mA

5.25 V

4.75 V

5

NO

CMOS

INDUSTRIAL

UNSPECIFIED

UNSPECIFIED

SLC NAND TYPE

26.6 mm

N25Q128A13ESE40G by Micron Technology

N25Q128A13ESE40G

Micron Technology

N25Q128A13ESE40G by Micron Technology is a NOR type flash memory with 16Mx8 organization, operating at 108MHz. It has a max supply voltage of 3.6V and endurance of 100K write/erase cycles. Ideal for industrial applications requiring high-speed serial data storage and retrieval.

108 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

5.285 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

3

Not Qualified

2.16 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5.285 mm

HARDWARE/SOFTWARE

SST39VF402C-70-4I-B3KE by Microchip Technology

SST39VF402C-70-4I-B3KE

Microchip Technology

SST39VF402C-70-4I-B3KE by Microchip Technology is a 256Kx16 NOR flash memory with 3V nominal voltage. It features 100,000 write/erase cycles, operates in industrial temperature range (-40 to 85°C), and has a max access time of 70ns. Ideal for applications requiring fast, reliable non-volatile memory storage in compact electronic devices.

70 ns

TOP BOOT BLOCK

TOP

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

4194304 bit

FLASH

16

3

1

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

8K,4K,16K,32K

.00002 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

40

YES

NOR TYPE

6 mm

RC28F00AM29EWHA by Micron Technology

RC28F00AM29EWHA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Power Supplies (V): 3/3.3;

100 ns

8

YES

YES

YES

R-PBGA-B64

e0

13 mm

1073741824 bit

FLASH

16

1

1K

64

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

16/32

PARALLEL

3/3.3

3

Not Qualified

YES

1.4 mm

128K

.00024 Amp

Flash Memories

31 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

M45PE10S-VMN6P by Micron Technology

M45PE10S-VMN6P

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G8;

75 MHz

R-PDSO-G8

4.9 mm

1048576 bit

FLASH

8

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

2.7

1.75 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

3.9 mm

23 ms

M45PE10S-VMP6G by Micron Technology

M45PE10S-VMP6G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm;

75 MHz

R-PDSO-N8

6 mm

1048576 bit

FLASH

8

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

2.7

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

23 ms

TC58NVG1S3ETAI0 by Toshiba

TC58NVG1S3ETAI0

Toshiba

Toshiba's TC58NVG1S3ETAI0 is a 256MX8 flash memory with 2K sectors and 128K word sector size. Operating at 3.3V, it offers fast access time of 25ns and low standby current of 0.00005Amp. Ideal for industrial applications requiring high memory density and reliable performance in a small outline package.

25 ns

YES

NO

R-PDSO-G48

18.4 mm

2147483648 bit

FLASH

8

1

2K

48

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2K

SERIAL

3/3.3

3.3

Not Qualified

YES

1.2 mm

128K

.00005 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

N25Q256A13EF840E by Micron Technology

N25Q256A13EF840E

Micron Technology

Micron Technology's N25Q256A13EF840E is a NOR type Flash Memory with 256Mx1 organization, operating in synchronous mode at up to 108MHz clock frequency. Ideal for industrial applications, it offers a memory density of 268435456 bits and supports SPI serial bus communication.

108 MHz

20

R-PDSO-N8

8 mm

268435456 bit

FLASH

1

1

8

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

HSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG

SERIAL

260

Not Qualified

1 mm

SPI

.00025 Amp

20 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q256A13EF840F by Micron Technology

N25Q256A13EF840F

Micron Technology

N25Q256A13EF840F by Micron Technology is a NOR flash memory with 32MX8 organization, SPI serial bus type, and 108 MHz clock frequency. It operates at temperatures ranging from -40 to 85 °C and has an endurance of 100K write/erase cycles. Ideal for industrial applications requiring high-speed data storage in compact devices.

SPI-COMPATIBLE SERIAL BUS INTERFACE

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

8 mm

268435456 bit

FLASH

8

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/3.3

3

Not Qualified

1 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE

NAND128W3AABN6E by Micron Technology

NAND128W3AABN6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

35 ns

R-PDSO-G48

e3

18.4 mm

134217728 bit

FLASH

8

1

48

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

PC28F00AP30TFA by Micron Technology

PC28F00AP30TFA

Micron Technology

Micron Technology's PC28F00AP30TFA is a 64MX16 NOR flash memory with 1.8V supply, operating at -40 to 85°C. Featuring synchronous mode, it has 64M words capacity and supports parallel interface. Ideal for industrial applications requiring fast access times and low standby current.

100 ns

TOP BOOT

TOP

YES

YES

NO

R-PBGA-B64

e1

10 mm

1073741824 bit

FLASH

16

1

4,1023

64

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

16

PARALLEL

260

1.8,1.8/3.3

3

Not Qualified

1.2 mm

16K,64K

.00024 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

8 mm

JS28F064M29EWHA by Micron Technology

JS28F064M29EWHA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

70 ns

8

YES

YES

YES

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

128

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

14 mm

PC28F512M29EWHA by Micron Technology

PC28F512M29EWHA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

100 ns

8

YES

YES

YES

R-PBGA-B64

e1

13 mm

536870912 bit

FLASH

16

1

512

64

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

16/32

PARALLEL

3/3.3

3

Not Qualified

YES

1.4 mm

128K

.000225 Amp

Flash Memories

31 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

SST25VF016B-75-4I-S2AF-T by Microchip Technology

SST25VF016B-75-4I-S2AF-T

Microchip Technology

SST25VF016B-75-4I-S2AF-T by Microchip: 16MX1 NOR Flash Memory with 80MHz clock, SPI serial bus. Ideal for industrial applications, offers 100000 Write/Erase cycles and operates at -40 to 85 °C.

80 MHz

100

100000 Write/Erase Cycles

S-PDSO-G8

e4

5.275 mm

16777216 bit

FLASH

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

3/3.3

2.7

Not Qualified

2.16 mm

SPI

.00002 Amp

Flash Memories

30 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

NOR TYPE

5.275 mm

HARDWARE/SOFTWARE

M25P80-VMC6G by Micron Technology

M25P80-VMC6G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: VSON; Package Shape: RECTANGULAR; Qualification: Not Qualified;

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

4 mm

8388608 bit

FLASH

1

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

PLASTIC/EPOXY

VSON

SOLCC8,.12,32

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

AEC-Q100

.6 mm

SPI

.0001 Amp

Flash Memories

15 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

NO LEAD

.8 mm

DUAL

NOT SPECIFIED

NOR TYPE

3 mm

15 ms

HARDWARE/SOFTWARE

M25P80-VMN6PBA by Micron Technology

M25P80-VMN6PBA

Micron Technology

M25P80-VMN6PBA by Micron Technology is an 8MX1 NOR flash memory with 8388608-bit density. It operates in synchronous mode at a max clock frequency of 75 MHz and supports SPI serial bus type. Ideal for industrial applications, it offers 100000 write/erase cycles endurance and has a min data retention time of 20 years.

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

8388608 bit

FLASH

1

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

AEC-Q100

1.75 mm

SPI

.00001 Amp

Flash Memories

15 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

3.9 mm

15 ms

HARDWARE/SOFTWARE

JS28F128P30TF75A by Micron Technology

JS28F128P30TF75A

Micron Technology

Micron Technology's JS28F128P30TF75A is a NOR flash memory with 8MX16 organization, operating at 1.8V. It features synchronous operation, 8388608 words capacity, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density in compact designs.

75 ns

TOP

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

1

4,127

56

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000055 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

N25Q032A11ESF40G by Micron Technology

N25Q032A11ESF40G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 2 V;

108 MHz

R-PDSO-G16

10.3 mm

33554432 bit

FLASH

32

1

16

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX32

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

2.65 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

7.5 mm

N25Q064A13EF840E by Micron Technology

N25Q064A13EF840E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: VSON; Package Shape: RECTANGULAR; Qualification: Not Qualified;

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

8 mm

67108864 bit

FLASH

64

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX64

PLASTIC/EPOXY

VSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3/3.3

3

Not Qualified

1 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q064A13ESE40E by Micron Technology

N25Q064A13ESE40E

Micron Technology

Micron Technology's N25Q064A13ESE40E is a NOR type Flash Memory with 1MX64 organization, 108 MHz clock frequency, and SPI serial bus. It operates at -40 to 85 °C, has 100K Write/Erase cycles endurance, and is ideal for industrial applications requiring high-speed data storage in compact devices.

108 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

5.285 mm

67108864 bit

FLASH

64

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX64

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

3

Not Qualified

2.16 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5.285 mm

HARDWARE/SOFTWARE

N25Q064A13ESE40G by Micron Technology

N25Q064A13ESE40G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: SQUARE; Nominal Supply Voltage / Vsup (V): 3;

108 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

5.285 mm

67108864 bit

FLASH

64

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX64

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

3

Not Qualified

2.16 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5.285 mm

HARDWARE/SOFTWARE

N25Q064A13ESF40F by Micron Technology

N25Q064A13ESF40F

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

67108864 bit

FLASH

64

1

16

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX64

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/3.3

3

Not Qualified

2.65 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

N25Q064A13ESF40G by Micron Technology

N25Q064A13ESF40G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Length: 10.3 mm;

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

67108864 bit

FLASH

64

1

16

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX64

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/3.3

3

Not Qualified

2.65 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

JS28F064M29EWBA by Micron Technology

JS28F064M29EWBA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Length: 18.4 mm;

70 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

8,127

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

14 mm

PC48F4400P0VB0EE by Micron Technology

PC48F4400P0VB0EE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

100 ns

ASYNCHRONOUS READ MODE

BOTTOM/TOP

YES

YES

NO

R-PBGA-B64

e1

13 mm

536870912 bit

FLASH

16

1

8, 510

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.00042 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

SST25VF032B-66-4I-S2AF-T by Microchip Technology

SST25VF032B-66-4I-S2AF-T

Microchip Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: SQUARE; Endurance: 100000 Write/Erase Cycles;

80 MHz

100

100000 Write/Erase Cycles

S-PDSO-G8

e4

5.275 mm

33554432 bit

FLASH

1

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

3/3.3

Not Qualified

2.16 mm

SPI

.00002 Amp

Flash Memories

30 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

NOR TYPE

5.275 mm

HARDWARE/SOFTWARE

SST25VF032B-80-4I-S2AF-T by Microchip Technology

SST25VF032B-80-4I-S2AF-T

Microchip Technology

SST25VF032B-80-4I-S2AF-T by Microchip: NOR Flash Memory, 80MHz clock, 30mA supply current. Ideal for industrial applications requiring high-speed data storage with 100k write/erase cycles and SPI serial bus interface.

80 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

e4

33554432 bit

FLASH

8

8

4194304 words

4M

85 Cel

-40 Cel

4MX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

3/3.3

Not Qualified

SPI

.00002 Amp

Flash Memories

30 mA

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

NOR TYPE

HARDWARE/SOFTWARE

PC28F128P30BF65A by Micron Technology

PC28F128P30BF65A

Micron Technology

Micron Technology's PC28F128P30BF65A is a 1.8V NOR Flash Memory with 8MX16 organization, operating from -40 to 85°C. Featuring 8388608 words and 134217728 bits memory density, it offers fast access time of 65ns for industrial applications requiring reliable non-volatile storage solutions.

65 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

13 mm

134217728 bit

FLASH

16

1

4,127

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

8

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000055 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

W25Q64FVSFIG by Winbond Electronics

W25Q64FVSFIG

Winbond Electronics

W25Q64FVSFIG by Winbond Electronics is an 8MX8 flash memory IC with a memory density of 67108864 bit. It operates in synchronous mode with a max clock frequency of 104 MHz and features hardware/software write protection. This small outline package is ideal for industrial applications requiring reliable data storage and retrieval at temperatures ranging from -40 to 85 °C.

1

104 MHz

20

R-PDSO-G16

10.31 mm

67108864 bit

FLASH

8

1

16

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

3-STATE

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

Not Qualified

2.64 mm

SPI

.00005 Amp

3.6 V

3 V

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

7.49 mm

HARDWARE/SOFTWARE

PC28F00BM29EWHA by Micron Technology

PC28F00BM29EWHA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Data Polling: YES;

100 ns

8

YES

YES

YES

R-PBGA-B64

e1

13 mm

2147483648 bit

FLASH

16

1

2K

64

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

16/32

PARALLEL

3/3.3

3

Not Qualified

YES

1.4 mm

128K

.00048 Amp

Flash Memories

31 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

MX25L3235EZNI-10G by Macronix

MX25L3235EZNI-10G

Macronix

MX25L3235EZNI-10G by Macronix is a NOR flash memory with 8MX4 organization, SPI serial bus type, and 104 MHz clock frequency. Ideal for industrial applications requiring 33554432 bit memory density, it offers 100000 write/erase cycles endurance and operates at temperatures ranging from -40 to 85 °C.

IT ALSO CONFIGURED AS 32M X 1

2

104 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

33554432 bit

FLASH

4

3

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX4

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3/3.3

2.7

Not Qualified

.8 mm

SPI

.00004 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE