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PC28F00AP30TFA

Micron Technology

PC28F00AP30TFA by Micron Technology

Micron Technology's PC28F00AP30TFA is a 64MX16 NOR flash memory with 1.8V supply, operating at -40 to 85°C. Featuring synchronous mode, it has 64M words capacity and supports parallel interface. Ideal for industrial applications requiring fast access times and low standby current.

Median Price

$104.490

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mobius Materials

USA . 27 parts In-Stock

1+ parts

$104.490

100+ parts

$83.280

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27

$104.490

$83.280

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Touchstone Systems

USA . 2,617 parts In-Stock

1+ parts

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2,617

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Vyrian

USA . 2,572 parts In-Stock

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2,572

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Digiode

USA . 2,120 parts In-Stock

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2,120

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Chip Stock

USA . 2,000 parts In-Stock

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2,000

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Velocity Electronics

USA . 250 parts In-Stock

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250

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ComSIT Distribution GmbH

Germany . 100 parts In-Stock

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100

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

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100

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Cyclops Electronics Ltd

UK . 8 parts In-Stock

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8

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LWI Electronics Inc

India . 5 parts In-Stock

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5

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Dark Horse Electronics

USA . 5 parts In-Stock

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5

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North Shore Components

USA . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 210 parts In-Stock

1+ parts

$10.000

100+ parts

-

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210

$10.000

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AZTECH Wire

Italy . 748 parts In-Stock

1+ parts

$11.810

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748

$11.810

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A-Z Elektronik GmbH

Germany . 5,054 parts In-Stock

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5,054

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Microchip USA

USA . 4,814 parts In-Stock

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S.R.D Solutions

India . 4,500 parts In-Stock

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Perfect Parts

USA . 3,746 parts In-Stock

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3,746

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Alle Elektronik GmbH

Germany . 1,931 parts In-Stock

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1,931

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Corphita

USA . 1,928 parts In-Stock

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1,928

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Kepictronics

USA . 1,800 parts In-Stock

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1,800

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Speed Components Ltd (Excess)

Israel . 294 parts In-Stock

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294

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iodParts Technologies Inc.

India . 150 parts In-Stock

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150

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Elevate your device's performance with the Micron Technology PC28F00AP30TFA Flash Memory. Designed with precision and expertise, Micron Technology brings you a top-of-the-line product that guarantees seamless operation and reliability. This versatile memory solution is ideal for a wide range of applications, offering unmatched speed and efficiency. Experience the value and benefits of this cutting-edge technology, providing you with the competitive edge you need. Choose Micron Technology for superior quality and performance, every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, making it suitable for portable devices.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for higher data transfer rates and better performance in multitasking environments.

Nominal Supply Voltage / Vsup (V): 1.8

Low nominal supply voltage helps in reducing power consumption and increasing battery life of devices.

Temperature Grade: INDUSTRIAL

Industrial grade temperature range ensures reliability and stability of the product even in harsh environmental conditions.

Memory Density: 1073741824 bit

High memory density allows for storage of large amounts of data, making it suitable for applications requiring high capacity storage.

Technical Specifications

Flash Memory PC28F00AP30TFA attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

100 ns

Additional Features:

TOP BOOT

Boot Block:

TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,1023

No. of Terminals:

64

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Page Size (words):

16

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8,1.8/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.00024 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

31 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

PC28F00AP30TFA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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