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PC28F128P30BF65A

Micron Technology

PC28F128P30BF65A by Micron Technology

Micron Technology's PC28F128P30BF65A is a 1.8V NOR Flash Memory with 8MX16 organization, operating from -40 to 85°C. Featuring 8388608 words and 134217728 bits memory density, it offers fast access time of 65ns for industrial applications requiring reliable non-volatile storage solutions.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 4,700 parts In-Stock

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4,700

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Vyrian

USA . 4,032 parts In-Stock

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4,032

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Bristol Electronics

USA . 1,215 parts In-Stock

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1,215

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Cyclops Electronics Ltd

UK . 920 parts In-Stock

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920

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Digiode

USA . 827 parts In-Stock

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827

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 1,720 parts In-Stock

1+ parts

$10.526

100+ parts

-

1k+ parts

$10.105

10k+ parts

$10.105

1,720

$10.526

-

$10.105

$10.105

AZTECH Wire

Italy . 490 parts In-Stock

1+ parts

$11.830

100+ parts

-

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490

$11.830

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Ampacity Inc.

Singapore . 1,412 parts In-Stock

1+ parts

$12.000

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1,412

$12.000

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Component Stockers USA

USA . 2,394 parts In-Stock

1+ parts

$58.900

100+ parts

$55.960

1k+ parts

$54.190

10k+ parts

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2,394

$58.900

$55.960

$54.190

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S.R.D Solutions

India . 30,000 parts In-Stock

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30,000

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Perfect Parts

USA . 24,644 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,858 parts In-Stock

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Kepictronics

USA . 4,550 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Sternenhof Electronics (Excess)

Switzerland . 3,184 parts In-Stock

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RC Electronics

USA . 2,955 parts In-Stock

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2,955

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Futuretech Components

Singapore . 2,081 parts In-Stock

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Corphita

USA . 1,183 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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iodParts Technologies Inc.

India . 150 parts In-Stock

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150

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Unlock the power of reliable and high-quality flash memory with the PC28F128P30BF65A by Micron Technology. Designed for industrial-grade applications, this versatile memory solution offers customers a seamless experience with its advanced technology and efficient performance. Experience lightning-fast access times and ample storage capacity for your data-intensive projects. Trust in Micron's expertise and innovation to elevate your products to the next level. The PC28F128P30BF65A is the perfect choice for those seeking top-notch memory solutions that deliver exceptional value and benefits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the flash memory, making it suitable for a variety of environments.

Surface Mount: YES

Being surface mountable allows for easy integration onto PCBs, saving space and simplifying the manufacturing process.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode enables independent read and write operations, enhancing performance and efficiency.

Nominal Supply Voltage / Vsup (V): 1.8

The low nominal supply voltage of 1.8V ensures efficient power consumption without compromising performance.

No. of Terminals: 64

Having 64 terminals allows for seamless connectivity and communication with other components in the system.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, the flash memory can withstand elevated temperatures and operate reliably in challenging conditions.

Technical Specifications

Flash Memory PC28F128P30BF65A attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

65 ns

Additional Features:

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,127

No. of Terminals:

64

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Page Size (words):

8

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8,1.8/3.3

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.000055 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

PC28F128P30BF65A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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