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INDUSTRIAL Flash Memory 964

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
RC28F128P33TF60A by Micron Technology

RC28F128P33TF60A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TFBGA; Package Shape: RECTANGULAR; Memory Width: 16;

60 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

TOP

YES

YES

NO

R-PBGA-B64

e0

10 mm

134217728 bit

FLASH

16

1

4,127

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TFBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8

PARALLEL

245

2.5/3,3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

30

NO

NOR TYPE

8 mm

PC28F128P33TF60A by Micron Technology

PC28F128P33TF60A

Micron Technology

Micron Technology's PC28F128P33TF60A is a 3V NOR flash memory with 8Mx16 organization, operating from -40 to 85°C. It features a page size of 8 words, sector sizes of 16K and 64K words, and a memory density of 134217728 bits. Ideal for industrial applications requiring fast access times and low standby current.

60 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

TOP

YES

YES

NO

R-PBGA-B64

e1

10 mm

134217728 bit

FLASH

16

1

4,127

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

8

PARALLEL

260

2.5/3,3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

8 mm

MT29F1G08ABCHCET:C by Micron Technology

MT29F1G08ABCHCET:C

Micron Technology

Micron Technology's MT29F1G08ABCHCET:C is a 128MX8 SLC NAND flash memory with 1073741824 bit density. Operating at 1.8V, it offers industrial-grade temperature range of -40 to 85 °C. With parallel interface and very thin profile, it suits applications requiring high-speed data storage in compact devices.

R-PBGA-B63

e1

13 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MT29F1G16ABCHCET:C by Micron Technology

MT29F1G16ABCHCET:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Type: SLC NAND TYPE;

R-PBGA-B63

e1

13 mm

1073741824 bit

FLASH

16

1

63

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

W25Q40CLSSIG by Winbond Electronics

W25Q40CLSSIG

Winbond Electronics

W25Q40CLSSIG by Winbond Electronics is a 4MX1 NOR flash memory with 104 MHz clock frequency, SPI serial bus type. Operating at -40 to 85 °C, it offers 100000 Write/Erase Cycles endurance. Ideal for industrial applications requiring high-speed data storage in compact form factors.

104 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

5.28 mm

4194304 bit

FLASH

1

1

8

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX1

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

2.5/3.3

3

Not Qualified

2.16 mm

SPI

.000005 Amp

Flash Memories

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5.28 mm

HARDWARE/SOFTWARE

N25Q128A13EV740 by Micron Technology

N25Q128A13EV740

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; Package Code: DIE; Package Shape: UNSPECIFIED; Type: NOR TYPE; Minimum Supply Voltage (Vsup): 2.7 V;

108 MHz

X-XUUC-N

134217728 bit

FLASH

1

1

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

UNSPECIFIED

DIE

UNSPECIFIED

UNCASED CHIP

SERIAL

NOT SPECIFIED

3

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

NOT SPECIFIED

NOR TYPE

MT29F2G08ABAEAWP-ITX:E by Micron Technology

MT29F2G08ABAEAWP-ITX:E

Micron Technology

Micron Technology's MT29F2G08ABAEAWP-ITX:E is a 256MX8 SLC NAND flash memory with 2147483648 bit density. Operating at 3.3V, it has an industrial temperature grade of -40 to 85 °C. Suitable for parallel applications due to its CMOS technology and 0.5mm terminal pitch.

R-PDSO-G48

e3

18.4 mm

2147483648 bit

FLASH

8

1

48

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

MT28GU01GAAA1EGC-0SIT by Micron Technology

MT28GU01GAAA1EGC-0SIT

Micron Technology

MT28GU01GAAA1EGC-0SIT by Micron Technology is a 64MX16 Flash Memory with 1073741824 bit memory density. Operating at 1.8V, it offers a max access time of 96ns in industrial temperature grade applications. Featuring synchronous operation and parallel interface, this thin profile GRID ARRAY package is suitable for various high-performance embedded systems.

96 ns

R-PBGA-B64

e1

10 mm

1073741824 bit

FLASH

16

1

64

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

MT28GU01GAAA2EGC-0SIT by Micron Technology

MT28GU01GAAA2EGC-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V;

96 ns

R-PBGA-B64

e1

10 mm

1073741824 bit

FLASH

16

1

64

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

MT28GU256AAA1EGC-0SIT by Micron Technology

MT28GU256AAA1EGC-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Width: 8 mm;

96 ns

R-PBGA-B64

e1

10 mm

268435456 bit

FLASH

16

1

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

MT28GU256AAA2EGC-0SIT by Micron Technology

MT28GU256AAA2EGC-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B64;

96 ns

R-PBGA-B64

e1

10 mm

268435456 bit

FLASH

16

1

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

MT28GU512AAA2EGC-0SIT by Micron Technology

MT28GU512AAA2EGC-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B64;

96 ns

R-PBGA-B64

e1

10 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

JS28F00AP33EFA by Micron Technology

JS28F00AP33EFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

105 ns

IT ALSO OPERATES IN ASYNCHRONOUS MODE

R-PDSO-G56

e3

18.4 mm

1073741824 bit

FLASH

16

1

56

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

14 mm

JS28F00AP33TFA by Micron Technology

JS28F00AP33TFA

Micron Technology

Micron Technology's JS28F00AP33TFA is a 64MX16 Flash Memory with 1073741824 bit memory density. Operating at 3V, it has a max access time of 105ns and supports industrial temperature grade. Ideal for applications requiring high-speed data storage in compact devices.

105 ns

TOP BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE

TOP

R-PDSO-G56

e3

18.4 mm

1073741824 bit

FLASH

16

1

56

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

14 mm

JS28F512P33BFD by Micron Technology

JS28F512P33BFD

Micron Technology

Micron Technology's JS28F512P33BFD is a 32MX16 flash memory with 536MB density. Operating at 3V, it offers fast access time of 105ns in industrial temperatures. With parallel interface and bottom boot block, it suits applications requiring high-speed data storage.

105 ns

BOTTOM BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE

BOTTOM

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

14 mm

JS28F512P33EFA by Micron Technology

JS28F512P33EFA

Micron Technology

JS28F512P33EFA by Micron Technology is a NOR flash memory with 32MX16 organization, 536MB density, and 105ns access time. It operates at 3V, has a temperature range of -40 to 85°C, and is suitable for industrial applications requiring high-speed parallel memory access.

105 ns

IT ALSO OPERATES IN ASYNCHRONOUS MODE

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3

1.2 mm

31 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NOR TYPE

14 mm

JS28F512P33TFA by Micron Technology

JS28F512P33TFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Boot Block: TOP;

105 ns

TOP BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE

TOP

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

14 mm

PC28F00AP33EFA by Micron Technology

PC28F00AP33EFA

Micron Technology

Micron Technology's PC28F00AP33EFA is a 64MX16 Flash Memory with 67108864 words. Operating at 3V, it offers fast access time of 95ns in industrial temperatures. Its parallel interface and thin profile make it ideal for high-speed data storage applications.

95 ns

IT ALSO OPERATES IN ASYNCHRONOUS MODE

R-PBGA-B64

e1

10 mm

1073741824 bit

FLASH

16

1

64

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

8 mm

PC28F00BP33EFA by Micron Technology

PC28F00BP33EFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

100 ns

IT ALSO OPERATES IN ASYNCHRONOUS MODE

R-PBGA-B64

e1

10 mm

2147483648 bit

FLASH

16

1

64

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

PC28F512P33BFD by Micron Technology

PC28F512P33BFD

Micron Technology

Micron Technology's PC28F512P33BFD is a 32MX16 flash memory with 33554432 words. It operates at 3V, has a memory width of 16 bits, and offers fast access time of 95 ns. Ideal for industrial applications requiring high-density memory in a compact GRID ARRAY package.

95 ns

BOTTOM BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE

BOTTOM

R-PBGA-B64

e1

10 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

PC28F512P33EFA by Micron Technology

PC28F512P33EFA

Micron Technology

Micron Technology's PC28F512P33EFA is a 32MX16 Flash Memory with 33554432 words. Operating at 3V, it offers a memory density of 536870912 bits and operates in industrial temperature grade. With a parallel interface and synchronous mode, it is ideal for applications requiring high-speed data storage and retrieval.

95 ns

IT ALSO OPERATES IN ASYNCHRONOUS MODE

R-PBGA-B64

e1

10 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

PC28F512P33TFA by Micron Technology

PC28F512P33TFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

95 ns

TOP BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE

TOP

R-PBGA-B64

e1

10 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

SST26VF064BA-104I/MF by Microchip Technology

SST26VF064BA-104I/MF

Microchip Technology

SST26VF064BA-104I/MF by Microchip is a 64M NOR flash memory with SPI serial bus, 104 MHz clock frequency, and 100000 write/erase cycles. It operates at -40 to 85 °C for industrial applications requiring reliable non-volatile memory storage in a compact package.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

67108864 bit

FLASH

1

1

1

8

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3

.8 mm

SPI

.000045 Amp

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

SST26WF016B-104I/MF by Microchip Technology

SST26WF016B-104I/MF

Microchip Technology

SST26WF016B-104I/MF by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock freq., SPI serial bus. Ideal for industrial applications with -40 to 85 °C temp range, offering 100000 Write/Erase cycles and 16777216 bit memory density.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8

TS 16949

.8 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

SST26WF016B-104I/SN by Microchip Technology

SST26WF016B-104I/SN

Microchip Technology

SST26WF016B-104I/SN by Microchip: 16MX1 organization, 104 MHz clock frequency, SPI serial bus type. Ideal for industrial applications requiring NOR flash memory with 100000 write/erase cycles endurance and 1.8V programming voltage.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

16777216 bit

FLASH

1

3

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

TS 16949

1.75 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

SST26WF016BA-104I/MF by Microchip Technology

SST26WF016BA-104I/MF

Microchip Technology

SST26WF016BA-104I/MF by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock freq., SPI serial bus. Ideal for industrial applications requiring 100K write/erase cycles, operating b/w -40 to 85 °C with a supply voltage range of 1.65V to 1.95V.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8

TS 16949

.8 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

SST26WF016BA-104I/SN by Microchip Technology

SST26WF016BA-104I/SN

Microchip Technology

SST26WF016BA-104I/SN by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock frequency, SPI serial bus type. Ideal for industrial applications requiring high endurance and 100000 write/erase cycles.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

16777216 bit

FLASH

1

3

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

TS 16949

1.75 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

SST26WF016BAT-104I/MF by Microchip Technology

SST26WF016BAT-104I/MF

Microchip Technology

SST26WF016BAT-104I/MF by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock freq., SPI serial bus. Ideal for industrial applications requiring high endurance, with 100K write/erase cycles and operating temp range of -40 to 85°C.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8

TS 16949

.8 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

SST26WF016BAT-104I/SN by Microchip Technology

SST26WF016BAT-104I/SN

Microchip Technology

SST26WF016BAT-104I/SN by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock frequency, SPI serial bus type. Ideal for industrial applications requiring high endurance with 100K write/erase cycles and operating temperature range of -40 to 85°C.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

16777216 bit

FLASH

1

3

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

TS 16949

1.75 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

SST26WF016BT-104I/CS by Microchip Technology

SST26WF016BT-104I/CS

Microchip Technology

SST26WF016BT-104I/CS by Microchip: NOR flash memory with 16Mx1 organization, operates at 104MHz clock frequency. Ideal for industrial applications, offers 100K write/erase cycles and SPI serial bus type for high-speed data transfer. Operating range from -40 to 85°C ensures reliable performance in various environments.

104 MHz

100

100000 Write/Erase Cycles

e1

16777216 bit

FLASH

1

1

1

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

SERIAL

1.8

TS 16949

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

CMOS

INDUSTRIAL

TIN SILVER COPPER

NOR TYPE

HARDWARE/SOFTWARE

SST26WF016BT-104I/MF by Microchip Technology

SST26WF016BT-104I/MF

Microchip Technology

SST26WF016BT-104I/MF by Microchip: NOR Flash Memory, 16MX1 organization, SPI serial bus type. Ideal for industrial applications with -40 to 85 °C operating temp range. Features 104 MHz clock frequency and 100000 write/erase cycles endurance.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8

TS 16949

.8 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

SST26WF016BT-104I/SN by Microchip Technology

SST26WF016BT-104I/SN

Microchip Technology

SST26WF016BT-104I/SN by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock freq., SPI serial bus type. Ideal for industrial applications requiring high endurance with 100K write/erase cycles and low standby current of 0.000005Amp.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

16777216 bit

FLASH

1

1

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

TS 16949

1.75 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

SST26VF032B-104I/TD by Microchip Technology

SST26VF032B-104I/TD

Microchip Technology

SST26VF032B-104I/TD by Microchip: 3V supply, 104MHz clock freq, SPI serial bus. Ideal for industrial applications requiring EEPROM memory with 100K write/erase cycles and -40 to 85°C operating range. Compact package with 24 terminals, suitable for thin profile designs.

104 MHz

100

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

33554432 bit

EEPROM

8

3

1

1

24

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX8

PLASTIC/EPOXY

TBGA

BGA24,4X6,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

AEC-Q100

1.2 mm

SPI

.000045 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

W25Q64FWSSIG by Winbond Electronics

W25Q64FWSSIG

Winbond Electronics

W25Q64FWSSIG by Winbond Electronics is a 64M NOR Flash Memory with SPI interface. Features include 104 MHz clock frequency, 1.8V programming voltage, and 100K Write/Erase cycles endurance. Ideal for industrial applications requiring high-speed data storage in compact form factors.

104 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

e3

5.28 mm

67108864 bit

FLASH

1

1

8

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

1.8

1.8

Not Qualified

2.16 mm

SPI

.00002 Amp

Flash Memories

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

5.28 mm

HARDWARE/SOFTWARE

MTFC32GJDDQ-4MIT by Micron Technology

MTFC32GJDDQ-4MIT

Micron Technology

Micron Technology's MTFC32GJDDQ-4MIT is a 32GB MLC NAND flash memory with 100 terminals in a low-profile grid array package. Operating at 3.3V, it is ideal for industrial applications requiring high-density storage in compact spaces. With CMOS technology and ball terminal form, it offers reliable performance for various flash card solutions.

R-PBGA-B100

e1

18 mm

FLASH CARD

1

100

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

3.3

1.4 mm

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

M25P128-VME6GB by Micron Technology

M25P128-VME6GB

Micron Technology

Micron Technology's M25P128-VME6GB is a 16MX8 NOR flash memory with 134217728 bit density. Operating at 3V, it offers 10000 write/erase cycles and SPI serial bus interface. Ideal for industrial applications requiring high endurance and reliable data storage in compact form factor.

50 MHz

20

10000 Write/Erase Cycles

R-PDSO-N8

8 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/3.3

2.7

Not Qualified

1 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MT29F1G08ABADAWP-IT:D by Micron Technology

MT29F1G08ABADAWP-IT:D

Micron Technology

Micron Technology's MT29F1G08ABADAWP-IT:D is a 3.3V SLC NAND flash memory with 128Mx8 organization, operating in industrial temperature range. It features 2K page size, 128K sector size, and parallel interface. Ideal for applications requiring fast access times and high memory density.

25 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

1073741824 bit

FLASH

8

1

1K

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

128K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MT29F1G08ABADAWP-ITX:D by Micron Technology

MT29F1G08ABADAWP-ITX:D

Micron Technology

Micron Technology's MT29F1G08ABADAWP-ITX:D is a 128Mx8 SLC NAND flash memory with 3.3V programming voltage, operating in industrial temperature range. It features 2K page size, 128K sector size, and parallel interface. Ideal for applications requiring high-speed data storage and retrieval in harsh environments.

25 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

1073741824 bit

FLASH

8

1

1K

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

128K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MT29F1G08ABBDAH4-IT:D by Micron Technology

MT29F1G08ABBDAH4-IT:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Power Supplies (V): 1.8;

25 ns

YES

NO

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F64G08AFAAAWP-IT:A by Micron Technology

MT29F64G08AFAAAWP-IT:A

Micron Technology

Micron Technology's MT29F64G08AFAAAWP-IT:A is an 8GX8 MLC NAND flash memory with 3.3V supply, 8K page size, and 1M sector size. It operates in industrial temperature range (-40 to 85 °C) and has a parallel interface. Ideal for applications requiring high-density non-volatile memory with fast access times.

20 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

68719476736 bit

FLASH

8

1

8K

48

8589934592 words

8G

ASYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

8K

PARALLEL

3/3.3

3.3

Not Qualified

YES

1.2 mm

1M

.00001 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin (Sn)

GULL WING

.5 mm

DUAL

NO

MLC NAND TYPE

12 mm

N25Q00AA11G1240E by Micron Technology

N25Q00AA11G1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Density: 1073741824 bit;

108 MHz

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

1

1

24

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

SERIAL

260

1.8

1.3 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

MTFC16GJDEC-4MIT by Micron Technology

MTFC16GJDEC-4MIT

Micron Technology

Micron Technology's MTFC16GJDEC-4MIT is a 16GX8 MLC NAND flash memory with 137.4Gb density, operating at 52MHz clock frequency. It features a very thin profile grid array package suitable for industrial applications requiring high-speed data storage and retrieval.

52 MHz

R-PBGA-B169

e1

18 mm

137438953472 bit

FLASH CARD

8

1

169

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

VFBGA

BGA169,14X28,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

MLC NAND TYPE

14 mm

MT29F8G08ABABAWP-IT:B by Micron Technology

MT29F8G08ABABAWP-IT:B

Micron Technology

Micron Technology's MT29F8G08ABABAWP-IT:B is a 3.3V SLC NAND flash memory with 1GX8 organization, 2K sectors, and 4K page size. It operates in industrial temperatures (-40 to 85 °C) with 100000 write/erase cycles endurance. Ideal for applications requiring high-density parallel memory storage.

YES

NO

10

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

8589934592 bit

FLASH

8

1

2K

48

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4K

PARALLEL

YES

1.2 mm

512K

.00005 Amp

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

LE25S80FDTWG by Onsemi

LE25S80FDTWG

Onsemi

LE25S80FDTWG by Onsemi is a 1MX8 NOR Flash Memory with 40 MHz clock frequency, operating at -40 to 90 °C. It has a supply voltage range of 1.65V to 1.95V and offers 8388608 bit memory density. Ideal for industrial applications requiring high-speed data storage in compact devices due to its small outline and thin profile package design.

40 MHz

R-PDSO-G8

e3

4.9 mm

8388608 bit

FLASH

8

3

1

8

1048576 words

1M

SYNCHRONOUS

90 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

VSOP

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE

SERIAL

1.8

.85 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin (Sn)

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

LE25U81AFDTWG by Onsemi

LE25U81AFDTWG

Onsemi

LE25U81AFDTWG by Onsemi is a NOR type Flash Memory with 1Mx8 organization, operating at up to 40MHz clock frequency. It has a small outline package style, suitable for industrial applications requiring high memory density and low power consumption. With a wide temperature range of -40 to 85 °C, it offers reliable performance in various environments.

40 MHz

R-PDSO-G8

e3

4.9 mm

8388608 bit

FLASH

8

3

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

VSOP

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE

SERIAL

260

2.7

.85 mm

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

NOR TYPE

3.9 mm

MT29F16G08ADACAH4-IT:C by Micron Technology

MT29F16G08ADACAH4-IT:C

Micron Technology

MT29F16G08ADACAH4-IT:C by Micron Technology is a 3.3V SLC NAND flash memory with 2GX8 organization, 4K page size, and 256K sector size. It operates in industrial temperature range (-40 to 85 °C) and has a parallel interface. Ideal for applications requiring fast access times and high memory density.

25 ns

YES

NO

R-PBGA-B63

11 mm

17179869184 bit

FLASH

8

1

8K

63

2147483648 words

2G

ASYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

4K

PARALLEL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

YES

1 mm

256K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

NO

SLC NAND TYPE

9 mm

SST25WF080B-40I/SN by Microchip Technology

SST25WF080B-40I/SN

Microchip Technology

SST25WF080B-40I/SN by Microchip: 8MX1 organization, 40MHz clock frequency, SPI serial bus type. Ideal for industrial applications requiring 8388608-bit memory density and 100000 write/erase cycles endurance.

40 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

8388608 bit

FLASH

1

1

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.8

AEC-Q100; TS 16949

1.75 mm

SPI

.00001 Amp

15 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

SOFTWARE

SST25WF080BT-40I/SN by Microchip Technology

SST25WF080BT-40I/SN

Microchip Technology

SST25WF080BT-40I/SN by Microchip: 8MX1 flash memory with 8388608 bit density, operates at 40 MHz clock frequency. Ideal for industrial applications requiring 100000 Write/Erase cycles, SPI serial bus interface, and -40 to 85 °C temperature range.

40 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

8388608 bit

FLASH

1

1

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.8

AEC-Q100; TS 16949

1.75 mm

SPI

.00001 Amp

15 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

SOFTWARE