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INDUSTRIAL Flash Memory 964

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
N25Q256A13E1241E by Micron Technology

N25Q256A13E1241E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 1;

108 MHz

R-PBGA-B24

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

N25Q256A83E1241E by Micron Technology

N25Q256A83E1241E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3;

108 MHz

R-PBGA-B24

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

N25Q256A83E1241F by Micron Technology

N25Q256A83E1241F

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Organization: 256MX1;

108 MHz

R-PBGA-B24

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

N25Q512A83G1241E by Micron Technology

N25Q512A83G1241E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

108 MHz

R-PBGA-B24

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

M29W256GSH70ZS6E by Micron Technology

M29W256GSH70ZS6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

70 ns

8

R-PBGA-B64

13 mm

268435456 bit

FLASH

16

1

64

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

AEC-Q100

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

11 mm

M29W256GSL70ZS6E by Micron Technology

M29W256GSL70ZS6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

70 ns

8

R-PBGA-B64

13 mm

268435456 bit

FLASH

16

1

64

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

AEC-Q100

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

11 mm

M29W256GSL70ZS6F by Micron Technology

M29W256GSL70ZS6F

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Words: 16777216 words;

70 ns

8

R-PBGA-B64

13 mm

268435456 bit

FLASH

16

1

64

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

AEC-Q100

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

11 mm

N25Q064A13ESF42G by Micron Technology

N25Q064A13ESF42G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE;

108 MHz

R-PDSO-G16

10.3 mm

67108864 bit

FLASH

1

1

16

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

2.7

2.65 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

7.5 mm

M25P16-VMN6PBA by Micron Technology

M25P16-VMN6PBA

Micron Technology

M25P16-VMN6PBA by Micron Technology is a 2MX8 NOR type flash memory with 75 MHz clock frequency. It operates at -40 to 85 °C and has 100000 Write/Erase Cycles endurance. Ideal for industrial applications requiring high-speed synchronous operation in compact designs.

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

1.75 mm

SPI

.00001 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

M25P16-VMN6YPBA by Micron Technology

M25P16-VMN6YPBA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Serial Bus Type: SPI;

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

1.75 mm

SPI

.00001 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

MT28GU256AAA2EGC-0AAT by Micron Technology

MT28GU256AAA2EGC-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Organization: 16MX16;

133 MHz

R-PBGA-B64

10 mm

268435456 bit

FLASH

16

1

64

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

8 mm

MT28GU512AAA2EGC-0AAT by Micron Technology

MT28GU512AAA2EGC-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

133 MHz

R-PBGA-B64

10 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

8 mm

N25Q512A81GSF40G by Micron Technology

N25Q512A81GSF40G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; No. of Functions: 1;

108 MHz

R-PDSO-G16

10.3 mm

536870912 bit

FLASH

1

1

16

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

1.8

2.65 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

7.5 mm

MT28F008B3VG-9BET by Micron Technology

MT28F008B3VG-9BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 40; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Equivalence Code: TSSOP40,.8,20;

90 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

BOTTOM

YES

NO

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

1,2,1,7

40

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

MT28F800B3SG-9BET by Micron Technology

MT28F800B3SG-9BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Memory Width: 16;

90 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G44

e0

28.02 mm

8388608 bit

FLASH

16

1

1,2,1,7

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

3

Not Qualified

2.8 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F800B3SG-9TET by Micron Technology

MT28F800B3SG-9TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Position: DUAL;

90 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G44

e0

28.02 mm

8388608 bit

FLASH

16

1

1,2,1,7

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

3

Not Qualified

2.8 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F800B3WG-9BET by Micron Technology

MT28F800B3WG-9BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

90 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B3WG-9TET by Micron Technology

MT28F800B3WG-9TET

Micron Technology

MT28F800B3WG-9TET by Micron Technology is a NOR flash memory with 512KX16 organization, 8388608 bit memory density, and 100000 Write/Erase Cycles endurance. It operates at -40 to 85 °C, has a programming voltage of 3V, and is suitable for industrial applications requiring fast access times and high reliability.

90 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

PC28F00AM29EWHA by Micron Technology

PC28F00AM29EWHA

Micron Technology

Micron Technology's PC28F00AM29EWHA is a NOR flash memory with 64MX16 organization, operating at 3V. It features a 1K sector size, 128K word sector size, and offers an industrial temperature grade. Ideal for applications requiring fast access times and high memory density in industrial settings.

100 ns

8

YES

YES

YES

R-PBGA-B64

e1

13 mm

1073741824 bit

FLASH

16

1

1K

64

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

16/32

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.4 mm

128K

.00024 Amp

Flash Memories

31 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

YES

NOR TYPE

11 mm

MT28F008B5VG-8BET by Micron Technology

MT28F008B5VG-8BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 40; Package Code: TSOP1; Package Shape: RECTANGULAR; Additional Features: 100,000 ERASE CYCLES; BOTTOM BOOT BLOCK;

80 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

BOTTOM

YES

NO

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

1,2,1,7

40

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

MT28F008B5VG-8TET by Micron Technology

MT28F008B5VG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 40; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Words Code: 1M;

80 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

TOP

YES

NO

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

1,2,1,7

40

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

MT28F800B5SG-8BET by Micron Technology

MT28F800B5SG-8BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

80 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G44

e0

28.195 mm

8388608 bit

FLASH

16

1

1,2,1,7

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

2.7 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F800B5SG-8TET by Micron Technology

MT28F800B5SG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 4.5 V;

80 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G44

e0

28.195 mm

8388608 bit

FLASH

16

1

1,2,1,7

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

2.7 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F800B5WG-8BET by Micron Technology

MT28F800B5WG-8BET

Micron Technology

MT28F800B5WG-8BET by Micron Technology is a NOR type Flash Memory with 512Kx16 organization, operating at 5V. It features 80ns max access time, 524288 words capacity, and industrial temperature grade. Ideal for applications requiring fast data access and reliable non-volatile memory storage in harsh environments.

80 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B5WG-8TET by Micron Technology

MT28F800B5WG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

80 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

AT29C010A-12PI by Atmel

AT29C010A-12PI

Atmel

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: DIP; Package Shape: RECTANGULAR; Sector Size (Words): 8K,112K,8K;

120 ns

BOTTOM/TOP

NO

YES

R-PDIP-T32

e0

42.037 mm

1048576 bit

FLASH

8

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

5

Not Qualified

4.826 mm

8K,112K,8K

.0003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

NOR TYPE

15.24 mm

10 ms

AT29C040A-12PI by Atmel

AT29C040A-12PI

Atmel

AT29C040A-12PI by Atmel is a 512Kx8 NOR flash memory with 256-word page size. Operating at 5V, it has an access time of 120ns and supports asynchronous mode. Widely used in industrial applications for its 3-STATE output characteristics and toggle bit feature.

120 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

BOTTOM/TOP

NO

YES

R-PDIP-T32

e0

42.037 mm

4194304 bit

FLASH

8

1

2K

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

256

PARALLEL

5

5

Not Qualified

4.826 mm

256

.0003 Amp

Flash Memories

40 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

NOR TYPE

15.24 mm

10 ms

AT29C010A-90JI by Atmel

AT29C010A-90JI

Atmel

Atmel's AT29C010A-90JI is a 128Kx8 NOR Flash Memory with 90ns access time, operating at 5V. Suitable for industrial applications, it offers asynchronous operation, 3-state output, and a parallel interface. With a compact chip carrier package and low standby current of 0.00003A, it provides reliable non-volatile memory storage.

90 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e0

13.97 mm

1048576 bit

FLASH

8

2

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

5

5

Not Qualified

3.556 mm

8K,112K,8K

.00003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

J BEND

1.27 mm

QUAD

30

YES

NOR TYPE

11.43 mm

10 ms

AT29C1024-70JI by Atmel

AT29C1024-70JI

Atmel

Atmel's AT29C1024-70JI is a 64KX16 NOR flash memory chip with 10000 Write/Erase Cycles. Operating at 5V, it offers a max access time of 70ns and supports asynchronous mode. Ideal for industrial applications requiring reliable parallel memory storage in compact form factor.

70 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

NO

YES

10000 Write/Erase Cycles

S-PQCC-J44

e0

16.5862 mm

1048576 bit

FLASH

16

2

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

128

PARALLEL

225

5

5

Not Qualified

4.57 mm

.0002 Amp

Flash Memories

60 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

16.5862 mm

10 ms

MT28F400B5SG-8BET by Micron Technology

MT28F400B5SG-8BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

80 ns

USER SELECTABLE 5V OR 12V VPP; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G44

e0

28.195 mm

4194304 bit

FLASH

16

1

1,2,1,3

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

235

5

5

Not Qualified

2.7 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

GULL WING

1.27 mm

DUAL

30

NO

NOR TYPE

12.6 mm

MT28F400B5SG-8TET by Micron Technology

MT28F400B5SG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

80 ns

USER SELECTABLE 5V OR 12V VPP; TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G44

e0

28.195 mm

4194304 bit

FLASH

16

1

1,2,1,3

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

2.7 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F400B5WG-8BET by Micron Technology

MT28F400B5WG-8BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Surface Mount: YES;

80 ns

USER SELECTABLE 5V OR 12V VPP; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B5WG-8TET by Micron Technology

MT28F400B5WG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Command User Interface: YES;

80 ns

USER SELECTABLE 5V OR 12V VPP; TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MX29F800CBMI-70G by Macronix

MX29F800CBMI-70G

Macronix

Macronix's MX29F800CBMI-70G is a 512Kx16 NOR flash memory with 100,000 write/erase cycles. Operating at 5V, it offers fast access time of 70ns and endurance for industrial applications. With parallel interface and toggle bit support, it suits systems requiring reliable non-volatile memory storage.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G44

e3

28.5 mm

8388608 bit

FLASH

16

1

1,2,1,15

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

YES

3 mm

16K,8K,32K,64K

.00005 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

YES

NOR TYPE

12.6 mm

LE25S81MCTWG by Onsemi

LE25S81MCTWG

Onsemi

LE25S81MCTWG by Onsemi is a 1MX8 Flash Memory with 40 MHz Clock Frequency. Operating at -40 to 90 °C, it's ideal for industrial applications requiring 8388608 bit memory density and 1.65-1.95 V supply voltage range.

40 MHz

R-PDSO-G8

4.9 mm

8388608 bit

FLASH

8

1

8

1048576 words

1M

SYNCHRONOUS

90 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

1.8

1.75 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

LE25U81AMCTWG by Onsemi

LE25U81AMCTWG

Onsemi

The Onsemi LE25U81AMCTWG is a 1MX8 Flash Memory IC with 8388608 bit memory density. It operates in synchronous mode at up to 40 MHz clock frequency, suitable for industrial applications. With a small outline package style and Gull Wing terminals, it offers reliable performance in a compact form factor.

40 MHz

R-PDSO-G8

4.9 mm

8388608 bit

FLASH

8

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

2.7

1.75 mm

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

AT49BV8192A-11CI by Atmel

AT49BV8192A-11CI

Atmel

Atmel's AT49BV8192A-11CI is a 512Kx16 NOR flash memory with 85°C max temp, 110ns access time, and 3V programming voltage. Ideal for industrial applications requiring fast data access and reliable non-volatile storage in a compact 7mm square package.

110 ns

HARDWARE DATA PROTECTION

8

BOTTOM

YES

YES

S-PBGA-B48

e0

7 mm

8388608 bit

FLASH

16

1

1,2,1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

3/3.3

3

Not Qualified

1.25 mm

16K,8K,992K

.00005 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.75 mm

BOTTOM

YES

NOR TYPE

7 mm

AT49BV1614-90TI by Atmel

AT49BV1614-90TI

Atmel

AT49BV1614-90TI by Atmel is a 1MX16 NOR flash memory with 3V supply, operating at -40 to 85°C. It features asynchronous mode, 90ns access time, and 8K/32K/64K sector sizes. Ideal for industrial applications requiring fast data access and reliable non-volatile storage in a compact package.

90 ns

8

BOTTOM

YES

YES

R-PDSO-G48

e0

18.4 mm

16777216 bit

FLASH

16

1

8,2,30

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

3

Not Qualified

YES

1.2 mm

8K,32K,64K

.00001 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

AT29C256-12PI by Atmel

AT29C256-12PI

Atmel

Atmel's AT29C256-12PI is a 32KX8 NOR flash memory with 3-STATE output, operating at 5V. It has a page size of 64 words and offers fast access time of 120 ns. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package.

120 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

NO

YES

R-PDIP-T28

e0

36.95 mm

262144 bit

FLASH

8

1

512

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

5

Not Qualified

5.59 mm

64

.0003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

NOR TYPE

15.24 mm

10 ms

AT49F040-12TI by Atmel

AT49F040-12TI

Atmel

AT49F040-12TI by Atmel is a 512KX8 NOR flash memory with 3-STATE output, operating at 5V. It features industrial temperature grade, parallel interface, and bottom boot block. Ideal for applications requiring fast access time of 120ns, such as embedded systems and industrial automation.

120 ns

BYTE PROGRAMMABLE; HARDWARE DATA PROTECTION; 10000 WRITE CYCLES

BOTTOM

YES

YES

R-PDSO-G32

e0

18.4 mm

4194304 bit

FLASH

8

3

1

1,1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

240

5

5

Not Qualified

1.2 mm

16K,496K

.0003 Amp

Flash Memories

90 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

AT29C020-12JI by Atmel

AT29C020-12JI

Atmel

AT29C020-12JI by Atmel is a 256Kx8 NOR flash memory chip with 3-STATE output, operating at 5V. It has a fast access time of 120ns and supports asynchronous operation. Ideal for industrial applications requiring reliable non-volatile memory storage in compact form factors.

120 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e0

13.97 mm

2097152 bit

FLASH

8

2

1

1K

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

5

5

Not Qualified

3.556 mm

256

.0003 Amp

Flash Memories

40 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

10 ms

AT29C256-70JI by Atmel

AT29C256-70JI

Atmel

AT29C256-70JI by Atmel is a 32Kx8 NOR type Flash Memory with 3-STATE output, operating at 5V. It has a page size of 64 words and offers fast access time of 70ns. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact chip carrier package.

70 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

NO

YES

R-PQCC-J32

e0

13.97 mm

262144 bit

FLASH

8

2

1

512

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

64

PARALLEL

225

5

5

Not Qualified

3.556 mm

64

.0003 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

10 ms

AT49F002N-55JI by Atmel

AT49F002N-55JI

Atmel

Atmel's AT49F002N-55JI is a 256Kx8 NOR flash memory chip with 262144 words. Operating at 5V, it offers fast access time of 55ns and low standby current of 0.0003Amp. Ideal for industrial applications requiring reliable non-volatile memory storage in compact form factor.

55 ns

BOTTOM

YES

YES

R-PQCC-J32

e0

13.97 mm

2097152 bit

FLASH

8

2

1

1,2,1,1

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

5

5

Not Qualified

3.55 mm

16K,8K,96K,128K

.0003 Amp

Flash Memories

90 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

MT29F1G08ABBDAH4-ITX:D by Micron Technology

MT29F1G08ABBDAH4-ITX:D

Micron Technology

Micron Technology's MT29F1G08ABBDAH4-ITX:D is a 128MX8 SLC NAND flash memory with 1.8V programming voltage, 1K sectors, and 100000 write/erase cycles. It operates in industrial temperature grades, has a package style of GRID ARRAY, and is suitable for applications requiring high endurance and reliability.

YES

NO

10

100000 Write/Erase Cycles

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

1.8

YES

1 mm

128K

.00005 Amp

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

HARDWARE

M28W320CT90N6 by STMicroelectronics

M28W320CT90N6

STMicroelectronics

M28W320CT90N6 from STMicroelectronics is a 32Mbit NOR Flash memory with a 90 ns access time, operating b/w -40 °C to 85°C. It features an asynchronous mode and supports dual terminal positioning for efficient surface mounting. Ideal for industrial applications requiring reliable data storage.

90 ns

TOP BOOT BLOCK

TOP

YES

YES

NO

R-PDSO-G48

e0

18.4 mm

33554432 bit

FLASH

16

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3,3/3.3

3

Not Qualified

1.2 mm

4K,32K

.000005 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

M29F010B70K6T by STMicroelectronics

M29F010B70K6T

STMicroelectronics

M29F010B70K6T from STMicroelectronics is a 1Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and a max access time of 70 ns. It supports industrial applications with -40 °C to 85 °C temp range and offers 100k write/erase cycles. This compact chip carrier design ensures reliable performance in various electronic devices.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

5

Not Qualified

3.56 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29W040B90K6 by STMicroelectronics

M29W040B90K6

STMicroelectronics

M29W040B90K6 from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and a max access time of 90 ns. It supports industrial applications with a temp range of -40 °C to 85 °C and offers 100k write/erase cycles. Ideal for embedded systems, it comes in a compact chip carrier package with quad terminals.

90 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

2.7

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29W200BB70N6 by STMicroelectronics

M29W200BB70N6

STMicroelectronics

M29W200BB70N6 from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and a max access time of 70 ns. It supports industrial applications with -40 °C to 85 °C temp range and offers high endurance of 100K write/erase cycles. Its compact SOIC package ensures efficient surface mounting for space-constrained designs.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm