Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 52; Package Code: LGA; Toggle Bit: NO; Maximum Standby Current: .00001 Amp;
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Flash Memory MT29F128G08AMAAAC5-IT:A attributes and parameters. Explore more Flash Memory devices from Micron Technology
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MT29F128G08AMAAAC5-IT:A Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.51
SB
8542.32.00.50
PCN Packaging - Standard Pkg Label Chg 20/Feb/2019
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
2N2222A
Baneasa S A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; Qualification: Not Qualified;
MMBF170LT1G
Rochester Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;
SS14
Pro-an Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
FDN5618P
Onsemi
FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.
USBLC6-2SC6
STMicroelectronics
USBLC6-2SC6 by STMicroelectronics is a unidirectional transient voltage suppressor diode with a breakdown voltage of 6V. It has a max clamping voltage of 17V and operates in temperatures ranging from -40 to 125°C. This device, with dual terminals and matte tin finish, is ideal for protecting sensitive electronics from voltage spikes in various applications.
BSS138LT3G
BSS138LT3G by Onsemi is a N-CHANNEL FET with a min DS breakdown voltage of 50V. It is used for switching applications and has a max drain current of 0.2A and max drain-source on resistance of 3.5 ohm.
Vishay Semiconductors
BAV99
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
OHN3140U
Tt Electronics Plc
OHN3140U by Tt Electronics Plc is a magnetic field sensor with a max supply voltage of 24V and hysteresis of 2mT. It features an output range of 25mA and operates b/w -20 to 85°C. Ideal for applications requiring precise detection and measurement of magnetic fields in various industries.
Microchip Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -65 Cel; Terminal Position: BOTTOM;
ERJ2RKF1002X
Panasonic
Panasonic's ERJ2RKF1002X is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance and operating temperature range of -55 to 155 °C.
ULN2803A
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Additional Features: LOGIC LEVEL COMPATIBLE; Qualification: Not Qualified;
Microsemi
BSS138
Good-ark Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;
2N7002
Vishay Intertechnology
2N7002 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE, suitable for surface mount with GULL WING terminals.
ROHM
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
LL4148
Bkc Semiconductors
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Maximum Drain Current (ID): .2 A; Operating Mode: ENHANCEMENT MODE;
Promax-johnton
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: 7.5 ohm; Minimum DS Breakdown Voltage: 60 V;
LM317T
Comset Semiconductors
Other Regulators; No. of Terminals: 3; Terminal Pitch: 2.54 mm; Minimum Output Voltage-1: 1.2 V; Technology: BIPOLAR; Operating Temperature (TJ-Max): 125 Cel;
AT45DB161E-SSHD-B
Renesas Electronics
AT45DB161E-SSHD-B by Renesas Electronics is a 16Mx1 NOR type flash memory with 85MHz clock frequency and SPI serial bus. It operates at -40 to 85°C, has 100000 write/erase cycles endurance, and supports hardware/software write protection. Ideal for industrial applications requiring high-speed data storage in compact designs.
SDSDQAF3-064G-I
Western Digital
SDSDQAF3-064G-I by Western Digital is a Flash Memory chip with 64GX8 organization and MLC NAND type technology. It operates in ASYNCHRONOUS mode, has a memory density of 549755813888 bit, and can withstand temperatures from -25 to 85 °C. Ideal for applications requiring high-speed data storage in compact devices.
AT45DB161E-SSHF-T
AT45DB161E-SSHF-T by Renesas Electronics is a 16Mx1 NOR type flash memory with 70MHz clock frequency. It operates at 2.5/3.3V, has 100000 write/erase cycles endurance, and uses SPI serial bus for applications requiring high-speed data storage in industrial environments.
S29GL064S80TFV030
Infineon Technologies
S29GL064S80TFV030 by Infineon Technologies is an 8MX8 Flash Memory with 67108864 bit memory density and 80 ns max access time. It operates at a nominal voltage of 3V, suitable for industrial applications requiring fast and reliable data storage in a compact form factor. The package style is small outline, thin profile, shrink pitch, making it ideal for space-constrained designs that demand high-speed performance.
AT45DB321E-SHFHC-T
Dialog Semiconductor
FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Length: 5.29 mm;
M25P64-VME6TG
STMicroelectronics M25P64-VME6TG is a 3V NOR Flash Memory with 8Mx8 organization, SPI serial bus type, and 50MHz clock frequency. Ideal for industrial applications requiring high endurance of 100K write/erase cycles in a compact package measuring 8mm x 6mm.
S29AL016J70TFI020
S29AL016J70TFI020 by Infineon Technologies is a 1MX16 NOR type Flash Memory with 3V nominal voltage. It features asynchronous operation, 70ns access time, and 16K-64K sector sizes. Ideal for industrial applications requiring fast data access and reliable non-volatile memory storage in compact designs.
SST25VF032B-80-4I-S2AF
Silicon Storage Technology
FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: SQUARE; No. of Words: 4194304 words;
MX25R1635FZUIL0TR
Macronix
Macronix's MX25R1635FZUIL0TR is a 1.8V NOR Flash Memory with 2MX8 organization, operating at up to 80MHz clock frequency. Ideal for industrial applications, it offers 100K Write/Erase cycles, 85°C max temp, and low standby current of 0.000000035Amp.
S25FL512SAGMFIR10
S25FL512SAGMFIR10 by Infineon Technologies is a 64MX8 NOR type flash memory with 512753664 bit memory density. It operates at a max clock frequency of 133 MHz and has an endurance of 100000 write/erase cycles. Ideal for industrial applications requiring high-speed, low-power serial data storage solutions.
JS28F640J3F75A
Micron Technology
Micron Technology's JS28F640J3F75A is a 64Mb NOR flash memory with 4MX16 organization, operating at -40 to 85°C. It features a parallel interface, 4194304 words capacity, and peak reflow temp of 260°C. Ideal for industrial applications requiring fast access times and reliable data storage.
S25FL256SAGMFM000
The Infineon Technologies S25FL256SAGMFM000 is a 64MX4 flash memory with 268MB density. Operating at 133MHz, it has a clock frequency of 133 MHz and supports synchronous mode. With automotive temperature grade, it's ideal for applications requiring high-speed data storage in compact designs.
AT45DB161E-SHD-B
Atmel
FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Seated Height: 2.16 mm;
MTFC4GACAJCN-4MITTR
Micron Technology's MTFC4GACAJCN-4MITTR is a 4GX8 MLC NAND flash memory with 34359738368-bit density. Operating at up to 52 MHz, it features a very thin profile and fine pitch grid array package suitable for industrial applications. With a wide temperature range (-40 to 85 °C), this synchronous memory offers high performance in compact dimensions.
SST39VF6401B-70-4I-EKE
SST39VF6401B-70-4I-EKE by Microchip Technology is a 3V NOR flash memory with 4Mx16 organization, operating at -40 to 85°C. It offers 2K sectors, 100k write/erase cycles endurance, and supports common flash interface. Ideal for industrial applications requiring fast access time of 70ns and low standby current of 0.00002A.
SST26VF064B-104I/MN
SST26VF064B-104I/MN by Microchip Technology is a 64M NOR Flash Memory with SPI interface, 104 MHz clock frequency, and 100000 Write/Erase cycles. Ideal for industrial applications requiring high-speed data storage in compact devices due to its small outline package and low standby current of 0.000045 Amp.
S25FL512SAGBHI210
Spansion
FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Qualification: Not Qualified;
MT25QU256ABA8E12-1SIT/TR
FLASH; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Programming Voltage (V): 1.8;
AT25SF128A-SHB-T
FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Write Protection: HARDWARE/SOFTWARE;
NAND512W3A2SN6E
Micron's NAND512W3A2SN6E is a 64MX8 SLC NAND flash memory with 536870912-bit density. Operating at 3V, it has a temp range of -40 to 85°C and uses parallel interface with 0.5mm pitch. Ideal for industrial applications, this compact chip measures 18.4mm x 12mm x 1.2mm and features Ni/Pd/Au finish on dual terminals.
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MT29F16G08ABACAWP-ITZ:CTR
Micron Technology's MT29F16G08ABACAWP-ITZ:CTR is a 3.3V SLC NAND Flash Memory with 2GX8 organization, operating from -40 to 85 °C. It features a small outline package, parallel interface, and industrial temperature grade suitable for embedded systems and data storage applications.
MT29F2G08ABAEAWP-IT:E
Micron Technology's MT29F2G08ABAEAWP-IT:E is a 256MX8 SLC NAND Flash Memory with 2K sectors and 100,000 Write/Erase cycles. Operating at 3.3V, it offers industrial-grade reliability for applications requiring high endurance and fast data access. With a compact form factor of 18.4mm x 12mm and low standby current of 0.0001A, it is ideal for embedded systems in harsh environments.
MT29F16G08ABACAWP-ITZ:C
MT29F16G08ABACAWP-ITZ:C by Micron Technology is a 3.3V SLC NAND Flash Memory with 2GX8 organization, operating from -40 to 85 °C. It has a memory density of 17179869184 bit and is suitable for industrial applications requiring reliable, high-speed data storage in compact devices.
MT29F2G08ABAEAWP-IT:ETR
Micron Technology's MT29F2G08ABAEAWP-IT:ETR is a 256MX8 SLC NAND flash memory with 2K sectors and 100,000 write/erase cycles. Operating at 3.3V, it offers industrial-grade temperature range (-40 to 85°C) for applications requiring high endurance and reliability in small outline packages.
MT29F1G08ABAEAWP-IT:E
Micron Technology's MT29F1G08ABAEAWP-IT:E is a 3.3V SLC NAND Flash Memory with 128Mx8 organization, operating from -40 to 85°C. It features a small outline package, parallel interface, and industrial temperature grade suitable for various embedded applications.
MT29F8G08ABABAWP-IT:B
Micron Technology's MT29F8G08ABABAWP-IT:B is a 3.3V SLC NAND flash memory with 1GX8 organization, 2K sectors, and 4K page size. It operates in industrial temperatures (-40 to 85 °C) with 100000 write/erase cycles endurance. Ideal for applications requiring high-density parallel memory storage.
MT29F8G08ABABAWP-ITX:B
Micron Technology's MT29F8G08ABABAWP-ITX:B is an 8Gb SLC NAND flash memory with 3.3V supply voltage, operating from -40 to 85°C. It has a memory density of 8.58 Gb and is suitable for industrial applications requiring high reliability and performance in a surface-mount package.
MT29F128G08AJAAAWP-ITZ:A
Micron Technology's MT29F128G08AJAAAWP-ITZ:A is a 3.3V MLC NAND Flash Memory with 16GX8 organization, operating from -40 to 85 °C. It has a memory density of 137.4Gb and is suitable for industrial applications requiring high-speed parallel data storage.
MT29F2G16ABAEAWP:ETR
Micron Technology's MT29F2G16ABAEAWP:ETR is a 3.3V SLC NAND flash memory with 128Mx16 organization and 2147483648-bit memory density. Operating in asynchronous mode, it has a temperature range of 0-70°C and is suitable for commercial applications requiring high-speed parallel memory access.
MT29F1G08ABADAWP-IT:DTR
Micron Technology's MT29F1G08ABADAWP-IT:DTR is a 128MX8 SLC NAND flash memory with 1073741824-bit density. Operating at 3.3V, it has an industrial temperature grade and supports parallel mode. With a compact form factor of 18.4mm x 12mm x 1.2mm, it is ideal for high-performance embedded applications requiring reliable non-volatile storage.
MT29F16G08ABACAWP-AAT:C
FLASH; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Screening Level: AEC-Q100; Organization: 2GX8;
MT29F1G08ABADAWP-IT:D
Micron Technology's MT29F1G08ABADAWP-IT:D is a 3.3V SLC NAND flash memory with 128Mx8 organization, operating in industrial temperature range. It features 2K page size, 128K sector size, and parallel interface. Ideal for applications requiring fast access times and high memory density.
MT29F1G08ABADAWP-ITX:D
Micron Technology's MT29F1G08ABADAWP-ITX:D is a 128Mx8 SLC NAND flash memory with 3.3V programming voltage, operating in industrial temperature range. It features 2K page size, 128K sector size, and parallel interface. Ideal for applications requiring high-speed data storage and retrieval in harsh environments.
MT29F4G08ABADAWP-IT:D
MT29F4G08ABADAWP-IT:D by Micron Technology is a 512MX8 SLC NAND flash memory with 3.3V programming voltage and 2K page size. Ideal for industrial applications, it offers fast access time of 25ns, low standby current of 0.0001A, and operates in a temperature range from -40 to 85°C.
MT29F1G08ABADAWP-ITX:DTR
Micron Technology's MT29F1G08ABADAWP-ITX:DTR is a 128MX8 SLC NAND flash memory with 1073741824 bit density. Operating at 3.3V, it has an industrial temperature grade and supports asynchronous mode. This rectangular package with 48 terminals is suitable for various applications requiring high-speed parallel memory access.
MT29F2G01ABAGDWB-IT:GTR
FLASH; Programming Voltage (V): 3.3; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Type: SLC NAND TYPE;
MT29F8G08ABACAWP-IT:CTR
MT29F8G08ABACAWP-IT:CTR by Micron Technology is a 3.3V SLC NAND flash memory with 1GX8 organization, offering 8K sectors and 2K page size. Operating in industrial temperature range (-40 to 85 °C), it has a max endurance of 100k cycles. Ideal for applications requiring high-density, reliable storage solutions.
MT29F128G08AJAAAWP-ITZ:ATR
FLASH; Type: MLC NAND TYPE; Programming Voltage (V): 2.7; JESD-609 Code: e3; Terminal Finish: MATTE TIN;
MT29F2G08ABAEAH4-IT:E
MT29F2G08ABAEAH4-IT:E by Micron Technology is a 256MX8 SLC NAND flash memory with a capacity of 2GB. It operates at a voltage of 3.3V and has an industrial temperature grade. This flash memory is suitable for applications that require high-speed data storage and retrieval in harsh environments.
MT29F2G08ABAGAWP-IT:G
Micron Technology's MT29F2G08ABAGAWP-IT:G is an industrial-grade SLC NAND flash memory with 256Mx8 organization, operating from -40 to 85°C. It offers a memory density of 2147483648 bits and operates in asynchronous mode. Ideal for applications requiring high reliability and performance in harsh environments.
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