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MT29F8G08ABCBBH1-12IT:B

Micron Technology

MT29F8G08ABCBBH1-12IT:B by Micron Technology

Micron Technology's MT29F8G08ABCBBH1-12IT:B is a 1.8V SLC NAND flash memory with 1GX8 organization, 4K page size, and 512K sector size. It operates in industrial temperature range (-40 to 85 °C) with parallel interface and 100 terminals on a grid array package. Ideal for applications requiring high-density memory storage and fast access times.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,377 parts In-Stock

1+ parts

-

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5,377

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Nova Conductors

Japan . 550 parts In-Stock

1+ parts

-

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1k+ parts

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550

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Digiode

USA . 281 parts In-Stock

1+ parts

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281

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LIBRA Elektronik GmbH

Germany . 9 parts In-Stock

1+ parts

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9

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 173 parts In-Stock

1+ parts

$1.000

100+ parts

-

1k+ parts

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10k+ parts

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173

$1.000

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Andel Nordic

Denmark . 1,018 parts In-Stock

1+ parts

$3.571

100+ parts

-

1k+ parts

$3.428

10k+ parts

$3.428

1,018

$3.571

-

$3.428

$3.428

AZTECH Wire

Italy . 580 parts In-Stock

1+ parts

$5.518

100+ parts

-

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580

$5.518

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Corphita

USA . 1,394 parts In-Stock

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1,394

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Microchip USA

USA . 106 parts In-Stock

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106

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Bastille Electronics

Australia . 98 parts In-Stock

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98

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Overview

Experience the cutting-edge technology of Micron Technology with the MT29F8G08ABCBBH1-12IT:B Flash Memory. This high-quality product offers unparalleled reliability and performance, making it perfect for a wide range of applications. With its advanced features and exceptional value, this flash memory delivers seamless data storage solutions for your business needs. Trust Micron Technology to provide you with the best-in-class memory products that will elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection to the internal components of the flash memory, making it reliable for long-term use.

Nominal Supply Voltage / Vsup (V): 1.8

Low nominal supply voltage of 1.8V makes the flash memory energy efficient and suitable for portable devices with limited power capabilities.

Organization: 1GX8

Organization of 1GX8 indicates that the flash memory has a high capacity and efficient data organization, allowing for storage of large amounts of data in a structured manner.

Technology: CMOS

CMOS technology ensures low power consumption and high speed performance, making the flash memory suitable for various applications where efficiency is crucial.

Memory IC Type: FLASH

Being a flash memory IC type, this product offers non-volatile storage capability, high speed read and write operations, and reliable data retention, making it a good choice for data storage applications.

Technical Specifications

Flash Memory MT29F8G08ABCBBH1-12IT:B attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

20 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B100

Memory Density:

8589934592 bit

Memory IC Type:

Memory Width:

8

No. of Sectors/Size:

2K

No. of Terminals:

100

No. of Words:

1073741824 words

No. of Words Code:

1G

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Equivalence Code:

BGA100,10X17,40

Package Shape:

Package Style (Meter):

GRID ARRAY

Page Size (words):

4K

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8

Qualification:

Not Qualified

Ready or Busy:

YES

Sector Size (Words):

512K

Maximum Standby Current:

.00005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

50 mA

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

SLC NAND TYPE

Trade Compliance

MT29F8G08ABCBBH1-12IT:B Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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