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INDUSTRIAL Flash Memory 964

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
W25N01GVSFIG by Winbond Electronics

W25N01GVSFIG

Winbond Electronics

W25N01GVSFIG by Winbond Electronics is a 128MX8 SLC NAND flash memory with 1.07Gb density, operating at up to 104MHz clock frequency. It features a small outline package, synchronous mode, and industrial temperature grade suitability. Ideal for applications requiring high-speed data storage in compact electronic devices.

104 MHz

R-PDSO-G16

10.31 mm

1073741824 bit

FLASH

8

1

16

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

2.64 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

SLC NAND TYPE

7.49 mm

MT25TL256HBA8ESF-0AAT by Micron Technology

MT25TL256HBA8ESF-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

1

133 MHz

R-PDSO-G16

10.3 mm

268435456 bit

FLASH

8

1

16

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

AEC-Q100

2.65 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.5 mm

W25Q128JVEIM by Winbond Electronics

W25Q128JVEIM

Winbond Electronics

W25Q128JVEIM by Winbond Electronics is a 16Mx8 NOR flash memory with SPI serial bus, operating at 133MHz. It features 100000 write/erase cycles, 3.3V programming voltage, and -40 to 85°C temperature range. Ideal for industrial applications requiring high endurance and fast data transfer speeds.

4

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

8 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3.3

.8 mm

SPI

.00006 Amp

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

W25Q16JVZPIM by Winbond Electronics

W25Q16JVZPIM

Winbond Electronics

W25Q16JVZPIM by Winbond Electronics is a 16Mb flash memory IC with synchronous operation, 2Mx8 organization, and 133MHz clock frequency. It is ideal for industrial applications requiring fast data transfer and reliable storage in a compact package with a low profile.

133 MHz

R-PDSO-N8

6 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3

.8 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

5 mm

W25Q256JVEIM by Winbond Electronics

W25Q256JVEIM

Winbond Electronics

Winbond Electronics' W25Q256JVEIM is a NOR type Flash Memory with 32MX8 organization, SPI serial bus type, and 133 MHz clock frequency. Ideal for industrial applications, it offers 100000 write/erase cycles endurance and operates at temperatures ranging from -40 to 85 °C.

ALSO OPERATES AT 104MHZ AT 2.7-3.0V

133 MHz

20

100000 Write/Erase Cycles

R-XDSO-N8

8 mm

268435456 bit

FLASH

8

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

3-STATE

UNSPECIFIED

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3.3

.8 mm

SPI

.00002 Amp

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

W25Q256JVFIM by Winbond Electronics

W25Q256JVFIM

Winbond Electronics

W25Q256JVFIM by Winbond Electronics is a 32MX8 NOR type flash memory with 268MB density. It operates at 133MHz clock frequency, has 100K write/erase cycles endurance, and uses SPI serial bus. Ideal for industrial applications requiring high-speed data storage in compact devices.

ALSO OPERATES AT 104MHZ AT 2.7-3.0V

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.31 mm

268435456 bit

FLASH

8

1

16

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

3-STATE

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3.3

2.64 mm

SPI

.00002 Amp

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

7.49 mm

HARDWARE/SOFTWARE

W25Q32JVTCIM by Winbond Electronics

W25Q32JVTCIM

Winbond Electronics

Winbond Electronics' W25Q32JVTCIM is a 32Mb Flash Memory with 133MHz clock frequency, operating at 3V. It has a compact rectangular package and is suitable for industrial applications requiring high-speed synchronous operation. With 4Mx8 organization, it offers reliable performance in a wide temperature range from -40 to 85°C.

133 MHz

R-PBGA-B24

8 mm

33554432 bit

FLASH

8

1

24

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

W25Q80DLSNIG by Winbond Electronics

W25Q80DLSNIG

Winbond Electronics

Winbond Electronics' W25Q80DLSNIG is a 1Mx8 Flash Memory IC with 8388608-bit memory density. Operating at 2.5V to 3.6V, it supports up to 80MHz clock frequency in industrial temperature range (-40°C to +85°C). Ideal for applications requiring small outline package and synchronous operation.

80 MHz

R-PDSO-G8

4.85 mm

8388608 bit

FLASH

8

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

2.7

1.75 mm

3.6 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

W25Q80DLUXIE by Winbond Electronics

W25Q80DLUXIE

Winbond Electronics

W25Q80DLUXIE by Winbond Electronics is a 1MX8 flash memory with synchronous operation, 80 MHz clock frequency, and 2.5V nominal voltage. It is ideal for industrial applications requiring high-speed data storage in a small outline package with a very thin profile.

80 MHz

R-PDSO-N8

3 mm

8388608 bit

FLASH

8

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

2.7

.6 mm

3.6 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

W25Q80DLZPIG by Winbond Electronics

W25Q80DLZPIG

Winbond Electronics

W25Q80DLZPIG by Winbond Electronics is a 2.5V flash memory with 1Mx8 organization, operating at up to 80MHz clock frequency. Ideal for industrial applications, it offers a memory density of 8388608 bits and operates in synchronous mode with a temperature range of -40°C to 85°C.

80 MHz

R-PDSO-N8

6 mm

8388608 bit

FLASH

8

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

2.7

.8 mm

3.6 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

5 mm

W29N01HZBINA by Winbond Electronics

W29N01HZBINA

Winbond Electronics

W29N01HZBINA by Winbond Electronics is a 128MX8 SLC NAND flash memory with 1.8V programming voltage. Operating in industrial temperature range (-40 to 85 °C), it offers high memory density of 1073741824 bits for parallel applications. The package style is grid array, very thin profile, fine pitch, making it suitable for various embedded systems and storage solutions.

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

SLC NAND TYPE

9 mm

MTFC16GAKAENA-4MITTR by Micron Technology

MTFC16GAKAENA-4MITTR

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 17179869184 words;

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH CARD

8

3

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

14 mm

W29N08GVSIAA by Winbond Electronics

W29N08GVSIAA

Winbond Electronics

W29N08GVSIAA by Winbond Electronics is a 1GX8 SLC NAND flash memory with 8K sectors and 2K page size. Operating at 3V, it offers industrial-grade endurance of 100,000 cycles. With a compact form factor and low standby current, it's ideal for applications requiring high-density data storage in harsh environments.

1

NO

NO

10

100000 Write/Erase Cycles

R-PDSO-G48

18.4 mm

8589934592 bit

FLASH

8

1

8K

48

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TSOP1

tsop48,.787,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

NOT SPECIFIED

3

YES

1.2 mm

128K

.0002 Amp

350 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

SLC NAND TYPE

12 mm

W29N01HVSINA by Winbond Electronics

W29N01HVSINA

Winbond Electronics

W29N01HVSINA by Winbond Electronics is a 128Mx8 SLC NAND flash memory with 1073741824-bit memory density. Operating at 3.3V, it has an industrial temperature grade and supports parallel interface. With a small outline package style, it is suitable for applications requiring high-speed data storage in harsh environments.

R-PDSO-G48

18.4 mm

1073741824 bit

FLASH

8

1

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3.3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

SLC NAND TYPE

12 mm

IS34ML01G081-BLI by Integrated Silicon Solution

IS34ML01G081-BLI

Integrated Silicon Solution

IS34ML01G081-BLI by Integrated Silicon Solution is a 128MX8 SLC NAND flash memory with 1073741824 bit density. Operating at 3.3V, it has a temperature range of -40 to 85 °C and uses parallel interface for industrial applications. Measuring 11mm x 9mm x 1mm, this memory IC features a grid array package with very thin profile and fine pitch terminals.

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

3

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

10

SLC NAND TYPE

9 mm

MT29F4G08ABBDAH4-ITX:D by Micron Technology

MT29F4G08ABBDAH4-ITX:D

Micron Technology

MT29F4G08ABBDAH4-ITX:D by Micron Technology is a 512Mx8 SLC NAND flash memory with 4K sectors, operating at 1.8V. It features a very thin profile grid array package, suitable for industrial applications requiring fast access times of 25ns and low standby current of 0.00005Amp.

25 ns

YES

NO

R-PBGA-B63

11 mm

4294967296 bit

FLASH

8

1

4K

63

536870912 words

512M

ASYNCHRONOUS

85 Cel

-40 Cel

512MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

LE25U40CQE-AH by Onsemi

LE25U40CQE-AH

Onsemi

LE25U40CQE-AH by Onsemi is a NOR type Flash Memory with 512Kx8 organization, operating at 2.5V and 40MHz clock frequency. Suitable for industrial applications, it offers 100000 write/erase cycles, SPI serial bus interface, and a compact package style of small outline with very thin profile.

40 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

4194304 bit

FLASH

8

3

1

8

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

VSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE

SERIAL

2.5/3.3

2.7

Not Qualified

.8 mm

SPI

.00001 Amp

Flash Memories

15 mA

3.6 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

Tin (Sn)

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

15 ms

HARDWARE/SOFTWARE

LE25U40CQH-AH by Onsemi

LE25U40CQH-AH

Onsemi

LE25U40CQH-AH by Onsemi is a 512Kx8 NOR Flash Memory with SPI serial bus, operating at 2.5V/3.3V. It offers 100000 Write/Erase Cycles endurance, 40MHz clock frequency, and -40 to 85 °C temperature range. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

40 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

e3

4 mm

4194304 bit

FLASH

8

3

1

8

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.16,25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2.5/3.3

2.7

Not Qualified

.8 mm

SPI

.00001 Amp

Flash Memories

15 mA

3.6 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

.65 mm

DUAL

30

NOR TYPE

3 mm

15 ms

HARDWARE/SOFTWARE

MT29F4G08ABADAH4-AITX:D by Micron Technology

MT29F4G08ABADAH4-AITX:D

Micron Technology

Micron Technology's MT29F4G08ABADAH4-AITX:D is a 512MX8 SLC NAND flash memory with 4294967296 bit density. Operating at 3.3V, it has a programming voltage of 1.8V and supports industrial temperature grade applications. With a compact size of 11mm x 9mm x 1mm, this flash memory features parallel interface and very thin profile package for high-speed data storage solutions.

R-PBGA-B63

11 mm

4294967296 bit

FLASH

8

1

63

536870912 words

512M

ASYNCHRONOUS

85 Cel

-40 Cel

512MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.8

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

SLC NAND TYPE

9 mm

SST25PF040C-40V/MF by Microchip Technology

SST25PF040C-40V/MF

Microchip Technology

SST25PF040C-40V/MF by Microchip: NOR Flash Memory, 4Mx1 organization, SPI serial bus type. Operating at 3.3V with 40MHz clock frequency. Ideal for industrial applications requiring high endurance and low standby current.

40 MHz

20

100000 Write/Erase Cycles

S-PDSO-N10

e3

3 mm

4194304 bit

FLASH

1

1

1

10

4194304 words

4M

SYNCHRONOUS

105 Cel

-40 Cel

4MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC10,.12,20

SQUARE

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3.3

TS 16949

1 mm

SPI

.00001 Amp

15 mA

3.6 V

2.3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

.5 mm

DUAL

NOR TYPE

3 mm

SOFTWARE

SST25PF040CT-40V/MF by Microchip Technology

SST25PF040CT-40V/MF

Microchip Technology

SST25PF040CT-40V/MF by Microchip: 3.3V supply, 40MHz clock freq., SPI serial bus type. Ideal for industrial applications requiring 4M NOR flash memory with 100K write/erase cycles and -40 to 105°C operating temp range.

40 MHz

20

100000 Write/Erase Cycles

S-PDSO-N10

e3

3 mm

4194304 bit

FLASH

1

1

1

10

4194304 words

4M

SYNCHRONOUS

105 Cel

-40 Cel

4MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC10,.12,20

SQUARE

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3.3

TS 16949

1 mm

SPI

.00001 Amp

15 mA

3.6 V

2.3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

.5 mm

DUAL

NOR TYPE

3 mm

SOFTWARE

SST25PF040CT-40V/SN by Microchip Technology

SST25PF040CT-40V/SN

Microchip Technology

SST25PF040CT-40V/SN by Microchip: 3.3V supply, 40MHz clock freq., 100K cycles endurance. Ideal for industrial applications requiring NOR flash memory with SPI serial bus and 4M words capacity in a small outline package.

40 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

4194304 bit

FLASH

1

1

1

8

4194304 words

4M

SYNCHRONOUS

105 Cel

-40 Cel

4MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

3.3

TS 16949

1.75 mm

SPI

.00001 Amp

15 mA

3.6 V

2.3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

SOFTWARE

IS34ML02G084-TLI by Integrated Silicon Solution

IS34ML02G084-TLI

Integrated Silicon Solution

IS34ML02G084-TLI by Integrated Silicon Solution is a 256MX8 SLC NAND flash memory with 2147483648 bit density. Operating at 3.3V, it has an industrial temperature grade and supports parallel interface. With a compact size of 18.4mm x 12mm x 1.2mm, it is ideal for high-performance embedded systems requiring reliable non-volatile storage solutions.

R-PDSO-G48

e3

18.4 mm

2147483648 bit

FLASH

8

3

1

48

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

10

SLC NAND TYPE

12 mm

MTFC16GKQDI-IT by Micron Technology

MTFC16GKQDI-IT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 169; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

IT ALSO REQUIRES 1.65V TO 1.95V, MMC DEVICE

52 MHz

R-PBGA-B169

16 mm

137438953472 bit

FLASH CARD

8

1

169

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

30

MLC NAND TYPE

12 mm

AT25DF041A-SHF-B by Adesto Technologies

AT25DF041A-SHF-B

Adesto Technologies

AT25DF041A-SHF-B by Adesto Technologies is a NOR type flash memory with 512Kx8 organization and 4194304 bit memory density. It operates at temperatures ranging from -40 to 85 °C and has a max clock frequency of 50 MHz. It is commonly used in industrial applications for its endurance of 100000 write/erase cycles and SPI serial bus type.

50 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4194304 bit

FLASH

8

8

524288 words

512K

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

2.5/3.3

2.7

Not Qualified

SPI

.00002 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

HARDWARE/SOFTWARE

IS25LP128F-RMLE by Integrated Silicon Solution

IS25LP128F-RMLE

Integrated Silicon Solution

IS25LP128F-RMLE by Integrated Silicon Solution is a 16Mx8 NOR type flash memory with 166 MHz clock frequency. Operating at -40 to 105 °C, it offers 100000 Write/Erase Cycles endurance and SPI serial bus interface. Ideal for industrial applications requiring high-speed data storage in compact form factor.

ALSO OPERATES WITH 133MHZ @ 2.3VMIN SUPPLY

1

166 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.31 mm

134217728 bit

FLASH

8

1

16

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

2.65 mm

SPI

.00007 Amp

30 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

7.49 mm

HARDWARE/SOFTWARE

IS25WP128F-JKLE by Integrated Silicon Solution

IS25WP128F-JKLE

Integrated Silicon Solution

IS25WP128F-JKLE by Integrated Silicon Solution is a 16MX8 NOR type flash memory with 166 MHz clock frequency. Operating at 1.8V, it offers 100000 write/erase cycles and SPI serial bus interface. Ideal for industrial applications requiring high endurance and fast data transfer in compact designs.

ALSO OPERATES WITH 133MHZ @ 1.65VMIN SUPPLY

1

166 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

6 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

.8 mm

SPI

.000075 Amp

30 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5 mm

HARDWARE/SOFTWARE

IS25WP512M-RMLE by Integrated Silicon Solution

IS25WP512M-RMLE

Integrated Silicon Solution

IS25WP512M-RMLE by Integrated Silicon Solution is a 64MX8 NOR type Flash Memory with 133 MHz clock frequency. Operating at -40 to 105 °C, it offers 100000 Write/Erase Cycles endurance. Ideal for industrial applications requiring high-speed data storage in compact form factor.

1

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

e3

10.31 mm

536870912 bit

FLASH

8

1

16

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

2.65 mm

SPI

.00014 Amp

35 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin (Sn)

GULL WING

1.27 mm

DUAL

10

NOR TYPE

7.49 mm

HARDWARE/SOFTWARE

MTFDDAT128MBD-1AK12ITYY by Micron Technology

MTFDDAT128MBD-1AK12ITYY

Micron Technology

FLASH MODULE; Temperature Grade: INDUSTRIAL; Package Shape: RECTANGULAR; No. of Words: 137438953472 words; Terminal Position: SINGLE; Technology: CMOS;

R-XSMA-N

1099511627776 bit

FLASH MODULE

8

1

137438953472 words

128G

ASYNCHRONOUS

85 Cel

-40 Cel

128GX8

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

CMOS

INDUSTRIAL

NO LEAD

SINGLE

TLC NAND TYPE

MTFDDAT256MBD-1AK12ITYY by Micron Technology

MTFDDAT256MBD-1AK12ITYY

Micron Technology

FLASH MODULE; Temperature Grade: INDUSTRIAL; Package Shape: RECTANGULAR; Technology: CMOS; Package Style (Meter): MICROELECTRONIC ASSEMBLY; No. of Functions: 1;

R-XSMA-N

2199023255552 bit

FLASH MODULE

8

1

274877906944 words

256G

ASYNCHRONOUS

85 Cel

-40 Cel

256GX8

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

CMOS

INDUSTRIAL

NO LEAD

SINGLE

TLC NAND TYPE

W25Q16JLSSIG by Winbond Electronics

W25Q16JLSSIG

Winbond Electronics

W25Q16JLSSIG by Winbond Electronics is a 16Mb NOR flash memory with synchronous operation, 104 MHz clock frequency, and 2.7-3.6V supply voltage range. Ideal for industrial applications requiring high-speed data storage in a compact 8-terminal package with serial interface.

IT ALSO OPERATES AT FREQUENCY 50 MHZ AT SUPPLY VOLTAGE 2.3 TO 2.7 V

1

104 MHz

S-PDSO-G8

5.23 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

2.7

2.16 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5.23 mm

W25Q16JLZPIG by Winbond Electronics

W25Q16JLZPIG

Winbond Electronics

W25Q16JLZPIG by Winbond Electronics is a 16Mb NOR flash memory IC with synchronous operation, 104 MHz clock frequency, and 2.7-3.6V supply voltage range. Ideal for industrial applications requiring fast data access and reliable non-volatile storage in a compact 8-terminal package with serial interface.

IT ALSO OPERATES AT FREQUENCY 50 MHZ AT SUPPLY VOLTAGE 2.3 TO 2.7 V

1

104 MHz

R-PDSO-N8

6 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

2.7

.8 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5 mm

MT29F1G08ABADAH4-ITX:D by Micron Technology

MT29F1G08ABADAH4-ITX:D

Micron Technology

MT29F1G08ABADAH4-ITX:D by Micron Technology is a 3.3V SLC NAND flash memory with 128Mx8 organization, operating from -40 to 85°C. It features a 2K word page size, 128K word sector size, and parallel interface. Ideal for industrial applications requiring fast access times and low standby current.

25 ns

YES

NO

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

3.3

3.3

Not Qualified

YES

1 mm

128K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

SFCF0128H1BK1MT-I-MS-553-SMA by Swissbit Ag

SFCF0128H1BK1MT-I-MS-553-SMA

Swissbit Ag

SFCF0128H1BK1MT-I-MS-553-SMA by Swissbit Ag is a 128MX8 SLC NAND flash memory chip with 50 terminals, operating at 3.3V. It features synchronous operation, industrial temperature grade, and parallel interface. Ideal for applications requiring high-speed data storage in harsh environments.

300 ns

ALSO OPERATES AT 5V

R-XUUC-N50

42.8 mm

1073741824 bit

FLASH CARD

8

1

50

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

PARALLEL

NOT SPECIFIED

3.3

4.1 mm

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

NOT SPECIFIED

SLC NAND TYPE

36.4 mm

SFCF0512H1BK1MT-I-MS-553-SMA by Swissbit Ag

SFCF0512H1BK1MT-I-MS-553-SMA

Swissbit Ag

SFCF0512H1BK1MT-I-MS-553-SMA by Swissbit Ag is a 512Mx8 SLC NAND flash memory chip with synchronous operation. It operates at a voltage range of 2.97V to 3.63V, suitable for industrial applications requiring fast access times of up to 300ns. This rectangular surface-mount chip has an uncased package style and is designed for parallel data transfer with a memory density of 4294967296 bits.

300 ns

ALSO OPERATES AT 5V

R-XUUC-N50

42.8 mm

4294967296 bit

FLASH CARD

8

1

50

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

PARALLEL

NOT SPECIFIED

3.3

4.1 mm

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

NOT SPECIFIED

SLC NAND TYPE

36.4 mm

SFCF1024H1BK2MT-I-MO-553-SMA by Swissbit Ag

SFCF1024H1BK2MT-I-MO-553-SMA

Swissbit Ag

SFCF1024H1BK2MT-I-MO-553-SMA by Swissbit Ag is a 1GX8 SLC NAND flash memory chip with 1073741824 words capacity. Operating at 3.3V, it has an industrial temperature grade and parallel interface. Ideal for applications requiring high-speed data storage in harsh environments.

300 ns

ALSO OPERATES AT 5V

R-XUUC-N50

42.8 mm

8589934592 bit

FLASH CARD

8

1

50

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

PARALLEL

NOT SPECIFIED

3.3

4.1 mm

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

NOT SPECIFIED

SLC NAND TYPE

36.4 mm

MT29F1G16ABBEAH4-IT:E by Micron Technology

MT29F1G16ABBEAH4-IT:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 11 mm;

R-PBGA-B63

11 mm

1073741824 bit

FLASH

16

1

63

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT25QU128ABA8E12-1SIT by Micron Technology

MT25QU128ABA8E12-1SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Pitch: 1 mm;

166 MHz

R-PBGA-B24

8 mm

134217728 bit

FLASH

1

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

MT29F2G16ABAEAWP-AAT:E by Micron Technology

MT29F2G16ABAEAWP-AAT:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Functions: 1;

R-PDSO-G48

18.4 mm

2147483648 bit

FLASH

16

1

48

134217728 words

128M

ASYNCHRONOUS

105 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

W25Q256JWBIM by Winbond Electronics

W25Q256JWBIM

Winbond Electronics

Winbond Electronics' W25Q256JWBIM is a 32MX8 NOR flash memory with 133 MHz clock frequency, ideal for industrial applications. Featuring 100000 Write/Erase Cycles endurance and SPI serial bus type, it operates at -40 to 85 °C with 1.7-1.95 V supply voltage range.

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

268435456 bit

FLASH

8

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

1.2 mm

SPI

.0001 Amp

12 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

W25Q256JWBIQ by Winbond Electronics

W25Q256JWBIQ

Winbond Electronics

Winbond Electronics' W25Q256JWBIQ is a NOR flash memory with 32MX8 organization, operating at 133 MHz. It offers 100000 Write/Erase cycles endurance and operates on a supply voltage range of 1.7V to 1.95V. Ideal for industrial applications requiring high-speed data storage in compact devices.

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

268435456 bit

FLASH

8

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

1.2 mm

SPI

.0001 Amp

12 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

W25Q256JWEIQ by Winbond Electronics

W25Q256JWEIQ

Winbond Electronics

Winbond Electronics' W25Q256JWEIQ is a NOR flash memory with 32MX8 organization, operating at 133 MHz. It has a supply voltage range of 1.7V to 1.95V and offers 100000 write/erase cycles. Ideal for industrial applications requiring high-speed synchronous operation in compact designs.

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

8 mm

268435456 bit

FLASH

8

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

HVQCCN

SOLCC8,.3

RECTANGULAR

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

.8 mm

SPI

.0001 Amp

12 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

W25Q256JWFIQ by Winbond Electronics

W25Q256JWFIQ

Winbond Electronics

Winbond Electronics' W25Q256JWFIQ is a NOR type flash memory with 32MX8 organization, operating at 133 MHz. It features SPI serial bus type, 100000 write/erase cycles endurance, and 1.8V programming voltage. Ideal for industrial applications requiring high-speed data storage in compact devices.

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.31 mm

268435456 bit

FLASH

8

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

1.8

2.64 mm

SPI

.0001 Amp

12 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

7.49 mm

HARDWARE/SOFTWARE

W25Q256JWPIQ by Winbond Electronics

W25Q256JWPIQ

Winbond Electronics

W25Q256JWPIQ by Winbond Electronics is a NOR flash memory with 32MX8 organization, operating at a max clock frequency of 133 MHz. It has a memory density of 268435456 bit and offers 100000 write/erase cycles. This flash memory is commonly used in industrial applications requiring high-speed data storage.

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

6 mm

268435456 bit

FLASH

8

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

HVQCCN

SOLCC8,.25

RECTANGULAR

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

.8 mm

SPI

.0001 Amp

12 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5 mm

HARDWARE/SOFTWARE

NAND512R3A2SZAXE by Micron Technology

NAND512R3A2SZAXE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: TFBGA; Package Shape: RECTANGULAR; Type: SLC NAND TYPE;

45 ns

YES

NO

R-PBGA-B63

11 mm

512753664 bit

FLASH

8

1

4K

63

64094208 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

512

PARALLEL

1.8

1.8

Not Qualified

YES

1.05 mm

16K

.00005 Amp

Flash Memories

15 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

NAND512W3A2SNXE by Micron Technology

NAND512W3A2SNXE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Surface Mount: YES;

35 ns

YES

NO

R-PDSO-G48

18.4 mm

512753664 bit

FLASH

8

1

4K

48

64094208 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

512

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

16K

.00005 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

NAND512W3A2SZAXE by Micron Technology

NAND512W3A2SZAXE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

35 ns

YES

NO

R-PBGA-B63

11 mm

512753664 bit

FLASH

8

1

4K

63

64094208 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

512

PARALLEL

3/3.3

3

Not Qualified

YES

1.05 mm

16K

.00005 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

NAND512R3A2SZA6F by Micron Technology

NAND512R3A2SZA6F

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Sectors/Size: 4K;

45 ns

YES

NO

R-PBGA-B63

11 mm

512753664 bit

FLASH

8

1

4K

63

64094208 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

512

PARALLEL

1.8

1.8

Not Qualified

YES

1.05 mm

16K

.00005 Amp

Flash Memories

15 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm