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INDUSTRIAL Flash Memory 964

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT29F1G08ABADAWP-IT:DTR by Micron Technology

MT29F1G08ABADAWP-IT:DTR

Micron Technology

Micron Technology's MT29F1G08ABADAWP-IT:DTR is a 128MX8 SLC NAND flash memory with 1073741824-bit density. Operating at 3.3V, it has an industrial temperature grade and supports parallel mode. With a compact form factor of 18.4mm x 12mm x 1.2mm, it is ideal for high-performance embedded applications requiring reliable non-volatile storage.

R-PDSO-G48

e3

18.4 mm

1073741824 bit

FLASH

8

1

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin (Sn)

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

MT29F1G08ABADAWP-ITX:DTR by Micron Technology

MT29F1G08ABADAWP-ITX:DTR

Micron Technology

Micron Technology's MT29F1G08ABADAWP-ITX:DTR is a 128MX8 SLC NAND flash memory with 1073741824 bit density. Operating at 3.3V, it has an industrial temperature grade and supports asynchronous mode. This rectangular package with 48 terminals is suitable for various applications requiring high-speed parallel memory access.

R-PDSO-G48

e3

18.4 mm

1073741824 bit

FLASH

8

1

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

MT29F2G16ABDHC-ET:DTR by Micron Technology

MT29F2G16ABDHC-ET:DTR

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.65 V;

R-PBGA-B63

e1

13 mm

2147483648 bit

FLASH

16

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MT29F4G01AAADDHC-ITX:DTR by Micron Technology

MT29F4G01AAADDHC-ITX:DTR

Micron Technology

Micron Technology's MT29F4G01AAADDHC-ITX:DTR is a 3.3V SLC NAND Flash Memory with 4294967296-bit density, operating at up to 50MHz clock frequency. Ideal for industrial applications, it features a very thin profile grid array package and operates in synchronous mode.

50 MHz

R-PBGA-B63

e1

13 mm

4294967296 bit

FLASH

1

1

63

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX1

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

M25P40-VMN6TPBATR by Micron Technology

M25P40-VMN6TPBATR

Micron Technology

Micron Technology's M25P40-VMN6TPBATR is a NOR type Flash Memory with 512Kx8 organization, operating at 50 MHz clock frequency. It has a supply voltage range of 2.3V to 3.6V and is suitable for industrial temperature grade applications. The memory density is 4Mb, making it ideal for high-performance serial data storage solutions.

50 MHz

R-PDSO-G8

4.9 mm

4194304 bit

FLASH

8

1

8

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3

1.75 mm

3.6 V

2.3 V

2.7

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

3.9 mm

MT29F16G08ABACAWP-ITZ:CTR by Micron Technology

MT29F16G08ABACAWP-ITZ:CTR

Micron Technology

Micron Technology's MT29F16G08ABACAWP-ITZ:CTR is a 3.3V SLC NAND Flash Memory with 2GX8 organization, operating from -40 to 85 °C. It features a small outline package, parallel interface, and industrial temperature grade suitable for embedded systems and data storage applications.

R-PDSO-G48

e3

18.4 mm

17179869184 bit

FLASH

8

1

48

2147483648 words

2G

ASYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

MT29F1G01AAADDH4-IT:DTR by Micron Technology

MT29F1G01AAADDH4-IT:DTR

Micron Technology

Micron Technology's MT29F1G01AAADDH4-IT:DTR is a 3.3V SLC NAND Flash Memory with 1073741824-bit memory density. Operating at up to 50MHz, it features a very thin profile grid array package and is suitable for industrial applications requiring high-speed synchronous operation.

50 MHz

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

1

1

63

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F2G08ABAEAWP-ITX:ETR by Micron Technology

MT29F2G08ABAEAWP-ITX:ETR

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Technology: CMOS;

R-PDSO-G48

e3

18.4 mm

2147483648 bit

FLASH

8

1

48

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

N25Q128A23BSF40E by Micron Technology

N25Q128A23BSF40E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 108 MHz;

BOTTOM

108 MHz

R-PDSO-G16

10.3 mm

134217728 bit

FLASH

8

1

16

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3

2.65 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

MT29F2G08ABAEAH4-ITX:ETR by Micron Technology

MT29F2G08ABAEAH4-ITX:ETR

Micron Technology

Micron Technology's MT29F2G08ABAEAH4-ITX:ETR is a 256MX8 SLC NAND flash memory with 2147483648-bit density. Operating at 3.3V, it offers industrial-grade temperature range of -40 to 85 °C. Suitable for applications requiring high-speed parallel memory access in compact devices.

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

8

1

63

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MTFC16GAKAECN-4MIT by Micron Technology

MTFC16GAKAECN-4MIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

R-PBGA-B153

e1

13 mm

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

2.7

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

MLC NAND TYPE

11.5 mm

MTFC16GAKAENA-4MIT by Micron Technology

MTFC16GAKAENA-4MIT

Micron Technology

Micron Technology's MTFC16GAKAENA-4MIT is a 16GX8 flash memory with 17179869184 words capacity. Operating in synchronous mode, it has a temperature range of -40 to 85 °C and supports parallel programming. With a compact rectangular shape and thin profile, it is ideal for industrial applications requiring high memory density and fast data access.

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH CARD

8

3

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

14 mm

MTFC32GAKAENA-4MIT by Micron Technology

MTFC32GAKAENA-4MIT

Micron Technology

Micron Technology's MTFC32GAKAENA-4MIT is a 32GX8 flash memory with 274877906944 bit density. Operating in synchronous mode, it has a temperature range of -40 to 85 °C and supports parallel programming. With a compact rectangular shape and thin profile, this flash card is ideal for industrial applications requiring high-speed data storage.

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

MTFC64GAKAEEY-4MIT by Micron Technology

MTFC64GAKAEEY-4MIT

Micron Technology

MTFC64GAKAEEY-4MIT by Micron Technology is a 64GX8 MLC NAND flash memory with 549755813888 bit density. Operating in industrial temperature range (-40 to 85 °C), it features synchronous operation, thin profile grid array package, and 153 terminals for parallel communication. Ideal for high-density storage applications requiring fast data access and reliability.

R-PBGA-B153

e1

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

MLC NAND TYPE

11.5 mm

IS21ES04G-JCLI by Integrated Silicon Solution

IS21ES04G-JCLI

Integrated Silicon Solution

IS21ES04G-JCLI by Integrated Silicon Solution is a 4GX8 Flash Memory with 3.3V programming voltage and 85°C max operating temp. Ideal for industrial applications, it features a very thin profile grid array package with 153 terminals and operates in synchronous mode.

R-PBGA-B153

e1

13 mm

34359738368 bit

FLASH

8

3

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

10

11.5 mm

IS21ES04G-JQLI by Integrated Silicon Solution

IS21ES04G-JQLI

Integrated Silicon Solution

IS21ES04G-JQLI by Integrated Silicon Solution is a 4GX8 flash memory with 34359738368 bit density. Operating at 3.3V, it offers synchronous mode and industrial temperature grade suitability. With a package size of 18mm x 14mm, this low-profile grid array memory chip is ideal for high-performance applications requiring parallel data processing.

R-PBGA-B100

e1

18 mm

34359738368 bit

FLASH

8

3

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

3.3

1.4 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10

14 mm

IS21ES08G-JCLI by Integrated Silicon Solution

IS21ES08G-JCLI

Integrated Silicon Solution

IS21ES08G-JCLI by Integrated Silicon Solution is a 3.3V synchronous flash memory with 8GX8 organization, operating at up to 200MHz clock frequency. Ideal for industrial applications, this MLC NAND type memory offers a memory density of 68719476736 bits and features a very thin profile grid array package with fine pitch terminals.

1

200 MHz

NO

NO

R-PBGA-B153

e1

13 mm

68719476736 bit

FLASH

8

3

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

10

NO

MLC NAND TYPE

11.5 mm

IS21ES16G-JCLI by Integrated Silicon Solution

IS21ES16G-JCLI

Integrated Silicon Solution

IS21ES16G-JCLI by Integrated Silicon Solution is a 16GX8 Flash Memory with synchronous operation and a max clock frequency of 200 MHz. It has a memory density of 137438953472 bit and is suitable for industrial applications.

1

200 MHz

NO

NO

R-PBGA-B153

e1

13 mm

137438953472 bit

FLASH

8

3

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

10

NO

MLC NAND TYPE

11.5 mm

IS21ES32G-JCLI by Integrated Silicon Solution

IS21ES32G-JCLI

Integrated Silicon Solution

IS21ES32G-JCLI by Integrated Silicon Solution is a 32GX8 MLC NAND flash memory with 3-STATE output, operating at up to 200 MHz. It features a very thin profile grid array package suitable for industrial applications requiring high memory density and a wide operating temperature range from -40°C to 85°C.

1

200 MHz

NO

NO

R-PBGA-B153

e1

13 mm

274877906944 bit

FLASH

8

3

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

10

NO

MLC NAND TYPE

11.5 mm

IS22ES04G-JCLA1 by Integrated Silicon Solution

IS22ES04G-JCLA1

Integrated Silicon Solution

IS22ES04G-JCLA1 by Integrated Silicon Solution is a 4GX8 flash memory with 3.3V programming voltage and operates synchronously at -40 to 85°C. With a package style of GRID ARRAY, it's ideal for industrial applications requiring high memory density and reliability in harsh environments.

R-PBGA-B153

e1

13 mm

34359738368 bit

FLASH

8

3

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

AEC-Q100

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

10

11.5 mm

MT25QL256ABA8E12-1SAT by Micron Technology

MT25QL256ABA8E12-1SAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 8;

133 MHz

R-PBGA-B24

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

MT25QL256ABA8E14-1SIT by Micron Technology

MT25QL256ABA8E14-1SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

133 MHz

R-PBGA-B24

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

MT25QL256ABA8ESF-MSIT by Micron Technology

MT25QL256ABA8ESF-MSIT

Micron Technology

Micron Technology's MT25QL256ABA8ESF-MSIT is a 32MX8 flash memory IC with 268Mbit density. It operates at 133MHz clock frequency, suitable for industrial applications. With synchronous operation and serial interface, it offers fast data transfer in a small outline package.

133 MHz

R-PDSO-G16

10.3 mm

268435456 bit

FLASH

8

1

16

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

2.65 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.5 mm

IS34ML01G084-TLI by Integrated Silicon Solution

IS34ML01G084-TLI

Integrated Silicon Solution

IS34ML01G084-TLI by Integrated Silicon Solution is a 128MX8 SLC NAND flash memory with 134217728 words. Operating at 3.3V, it has a temperature range of -40 to 85 °C and uses parallel interface technology. Ideal for industrial applications requiring high-density memory in a small outline package.

R-PDSO-G48

e3

18.4 mm

1073741824 bit

FLASH

8

3

1

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

SFSD4096N3BM1TO-I-GE-2B1-STD by Swissbit Ag

SFSD4096N3BM1TO-I-GE-2B1-STD

Swissbit Ag

Swissbit Ag's SFSD4096N3BM1TO-I-GE-2B1-STD is a 4GX8 MLC NAND flash memory chip with 4294967296 words capacity. Operating at 100 MHz, it has a voltage range of 2.7V to 3.6V and temperature tolerance from -40°C to 85°C. Ideal for industrial applications requiring high-density, serial memory solutions in compact form factors.

100 MHz

R-XUUC-N8

15 mm

34359738368 bit

FLASH CARD

8

1

8

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

SERIAL

NOT SPECIFIED

3.3

1.1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

NOT SPECIFIED

MLC NAND TYPE

11 mm

MX25L12845GM2I-08G by Macronix

MX25L12845GM2I-08G

Macronix

Macronix MX25L12845GM2I-08G is a 128Mb Flash Memory with synchronous operation, 120MHz clock frequency, and 32Mx4 organization. It is ideal for industrial applications requiring high-speed data storage in a small outline package.

CAN BE ORGANISED AS 128 M X 1

2

120 MHz

R-PDSO-G8

e3

5.28 mm

134217728 bit

FLASH

4

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX4

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

3

2.16 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

5.23 mm

MX25L12845GMI-08G by Macronix

MX25L12845GMI-08G

Macronix

Macronix's MX25L12845GMI-08G is a 128Mb Flash Memory with synchronous operation, 120MHz clock frequency, and industrial temperature grade. It is ideal for applications requiring high-speed data transfer and reliable non-volatile memory storage in compact electronic devices.

CAN BE ORGANISED AS 128 M X 1

2

120 MHz

R-PDSO-G16

10.3 mm

134217728 bit

FLASH

4

1

16

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX4

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

2.65 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.52 mm

MX25L12845GXCI-08G by Macronix

MX25L12845GXCI-08G

Macronix

Macronix's MX25L12845GXCI-08G is a 128Mb Flash Memory with 32MX4 organization, operating at up to 120MHz. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring high-speed synchronous memory with compact form factor.

CAN BE ORGANISED AS 128 M X 1

2

120 MHz

R-PBGA-B24

8 mm

134217728 bit

FLASH

4

1

24

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX4

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

MX25L12845GXDI-08G by Macronix

MX25L12845GXDI-08G

Macronix

Macronix MX25L12845GXDI-08G is a 128Mb Flash Memory with synchronous operation, 120MHz clock frequency, and 32Mx4 organization. It is used in industrial applications for data storage due to its high memory density and serial interface.

CAN BE ORGANISED AS 128 M X 1

2

120 MHz

R-PBGA-B24

8 mm

134217728 bit

FLASH

4

1

24

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX4

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

MX25L12845GZ2I-08G by Macronix

MX25L12845GZ2I-08G

Macronix

Macronix MX25L12845GZ2I-08G is a 128Mb Flash Memory with synchronous operation, 120MHz clock frequency, and 32Mx4 organization. It is ideal for industrial applications requiring high memory density, operating b/w -40 to 85°C temperature range. The small outline package with very thin profile makes it suitable for space-constrained designs.

CAN BE ORGANISED AS 128 M X 1

2

120 MHz

R-PDSO-N8

8 mm

134217728 bit

FLASH

4

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX4

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3

.8 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

6 mm

MX25U12835FBBI-10G by Macronix

MX25U12835FBBI-10G

Macronix

Macronix's MX25U12835FBBI-10G is a 128Mb flash memory with synchronous operation, 104MHz clock frequency, and industrial temperature grade. Ideal for applications requiring high-speed data transfer and reliable storage in harsh environments.

IT CAN ALSO BE CONFIGURABLE AS 128MX1

2

104 MHz

R-PBGA-B23

134217728 bit

FLASH

4

1

23

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX4

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

NOT SPECIFIED

1.8

.52 mm

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

MX25U12835FM2I-10G by Macronix

MX25U12835FM2I-10G

Macronix

Macronix's MX25U12835FM2I-10G is a 128Mb Flash Memory with 32MX4 organization, operating at up to 104MHz clock frequency. It has a small outline package and is suitable for industrial applications requiring high-speed synchronous operation.

IT CAN ALSO BE CONFIGURABLE AS 128MX1

2

104 MHz

R-PDSO-G8

5.28 mm

134217728 bit

FLASH

4

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX4

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

1.8

2.16 mm

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

5.23 mm

MX25U12835FXDI-10G by Macronix

MX25U12835FXDI-10G

Macronix

Macronix's MX25U12835FXDI-10G is a 128Mb flash memory with synchronous operation, 104MHz clock frequency, and 1.8V programming voltage. Ideal for industrial applications requiring high-speed data storage in a compact grid array package.

IT CAN ALSO BE CONFIGURABLE AS 128MX1

2

104 MHz

R-PBGA-B24

8 mm

134217728 bit

FLASH

4

1

24

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX4

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

1.2 mm

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

MX25U51245GXDI0A by Macronix

MX25U51245GXDI0A

Macronix

Macronix MX25U51245GXDI0A is a 64MX8 NOR flash memory with 166 MHz clock frequency, SPI serial bus type. It operates at 1.8V, has 100K write/erase cycles endurance, and is ideal for industrial applications requiring high-speed data storage.

166 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

1.2 mm

SPI

.00005 Amp

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MX25UM51245GMI00 by Macronix

MX25UM51245GMI00

Macronix

Macronix's MX25UM51245GMI00 is a 64Mx8 Flash Memory with 536870912-bit memory density. Operating at 133MHz clock frequency, it has a supply voltage range of 1.65V to 2V. Ideal for industrial applications requiring high-speed data storage in compact form factors.

1

133 MHz

R-PDSO-G16

10.3 mm

536870912 bit

FLASH

8

1

16

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

1.8

2.65 mm

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.52 mm

MX66L1G45GXDI-08G by Macronix

MX66L1G45GXDI-08G

Macronix

Macronix's MX66L1G45GXDI-08G is a 256MX4 flash memory IC with 1073741824-bit density. It operates at up to 166 MHz clock frequency, suitable for industrial applications. With a thin profile and grid array package style, it offers synchronous operation and serial interface for efficient data storage solutions.

ALSO IT CAN BE CONFIGURED AS 1G X 1 BIT

2

166 MHz

R-PBGA-B24

8 mm

1073741824 bit

FLASH

4

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX4

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

W25N01GWZEIG by Winbond Electronics

W25N01GWZEIG

Winbond Electronics

W25N01GWZEIG by Winbond Electronics is a 1.8V SLC NAND Flash Memory with 128Mx8 organization, operating at up to 104MHz clock frequency. It features a small outline package suitable for industrial applications requiring high memory density and fast synchronous operation.

104 MHz

R-PDSO-N8

8 mm

1073741824 bit

FLASH

8

1

8

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

.8 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

SLC NAND TYPE

6 mm

W25Q256JVBIQ by Winbond Electronics

W25Q256JVBIQ

Winbond Electronics

W25Q256JVBIQ by Winbond Electronics is a 32MX8 NOR type flash memory with 268MB density. It operates at 133MHz clock frequency, has 100K write/erase cycles endurance, and uses SPI serial bus. Ideal for industrial applications requiring high-speed data storage in compact devices.

ALSO OPERATES AT 104MHZ AT 2.7-3.0V

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3.3

1.2 mm

SPI

.00002 Amp

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

W25Q32JVSFIQ by Winbond Electronics

W25Q32JVSFIQ

Winbond Electronics

W25Q32JVSFIQ by Winbond Electronics is a 4MX8 flash memory with a memory density of 33554432 bit. It operates at a max clock frequency of 133 MHz and has an industrial temperature grade. It is commonly used in applications that require high-speed data storage and retrieval.

2.7V NOMINAL AVAILABLE WITH 104MHZ

1

133 MHz

R-PDSO-G16

e3

10.31 mm

33554432 bit

FLASH

8

1

16

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3

2.64 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

7.49 mm

W25Q32JVSSIM by Winbond Electronics

W25Q32JVSSIM

Winbond Electronics

W25Q32JVSSIM by Winbond Electronics is a 32Mb NOR flash memory with 133MHz clock frequency, SPI serial bus type, and 3.3V programming voltage. It is ideal for industrial applications requiring high endurance of 100K write/erase cycles in a compact small outline package.

133 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

5.28 mm

33554432 bit

FLASH

8

1

8

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3.3

2.16 mm

SPI

.00005 Amp

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5.28 mm

HARDWARE/SOFTWARE

W25Q32JVTBIQ by Winbond Electronics

W25Q32JVTBIQ

Winbond Electronics

Winbond Electronics' W25Q32JVTBIQ is a 32Mb flash memory with synchronous operation at 133MHz clock frequency. It features a 3V nominal voltage and industrial temperature grade, suitable for applications requiring high-speed data storage in compact devices. The package style is grid array with thin profile, making it ideal for space-constrained designs.

2.7V NOMINAL AVAILABLE WITH 104MHZ

1

133 MHz

R-PBGA-B24

e1

8 mm

33554432 bit

FLASH

8

1

24

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

6 mm

W25Q32JVZPIM by Winbond Electronics

W25Q32JVZPIM

Winbond Electronics

W25Q32JVZPIM by Winbond Electronics is a 32Mb Flash Memory with synchronous operation at 133MHz. It has a supply voltage range of 2.7V to 3.6V, ideal for industrial applications requiring high-speed data storage in compact devices. The small outline package with dual terminals and no lead form factor makes it suitable for space-constrained designs.

133 MHz

R-PDSO-N8

6 mm

33554432 bit

FLASH

8

1

8

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3

.8 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

5 mm

W25Q64JVSFIM by Winbond Electronics

W25Q64JVSFIM

Winbond Electronics

Winbond Electronics' W25Q64JVSFIM is a 3.3V NOR flash memory with 8MX8 organization, SPI serial bus type, and 133 MHz clock frequency. Ideal for industrial applications requiring high endurance, it offers 100000 write/erase cycles and operates in a temperature range of -40 to 85°C.

IT ALSO OPERATES AT 2.7V @ 104MHZ

1

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.31 mm

67108864 bit

FLASH

8

1

16

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

3-STATE

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3.3

2.64 mm

SPI

.00005 Amp

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

7.49 mm

HARDWARE/SOFTWARE

W25Q64JVSSIM by Winbond Electronics

W25Q64JVSSIM

Winbond Electronics

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: SQUARE; No. of Functions: 1;

IT ALSO OPERATES AT 2.7V @ 104MHZ

1

133 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

5.28 mm

67108864 bit

FLASH

8

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3.3

2.16 mm

SPI

.00005 Amp

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5.28 mm

HARDWARE/SOFTWARE

W25Q64JVTBIQ by Winbond Electronics

W25Q64JVTBIQ

Winbond Electronics

Winbond Electronics' W25Q64JVTBIQ is a 3.3V NOR flash memory with 8Mx8 organization, SPI serial bus type, and 133MHz clock frequency. Ideal for industrial applications requiring high endurance, it offers 100K write/erase cycles and operates in a temperature range of -40 to 85°C.

IT ALSO OPERATES AT 2.7V @ 104MHZ

1

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

67108864 bit

FLASH

8

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3.3

1.2 mm

SPI

.00005 Amp

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

W25Q64JVZEIM by Winbond Electronics

W25Q64JVZEIM

Winbond Electronics

W25Q64JVZEIM by Winbond Electronics is a NOR flash memory with 8MX8 organization, SPI serial bus type, and 133 MHz clock frequency. It operates at temperatures ranging from -40 to 85 °C and has a supply voltage of 3.3V. Ideal for industrial applications requiring high endurance and fast data transfer speeds.

IT ALSO OPERATES AT 2.7V @ 104MHZ

1

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

8 mm

67108864 bit

FLASH

8

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3.3

.8 mm

SPI

.00005 Amp

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

W25Q64JVZPIM by Winbond Electronics

W25Q64JVZPIM

Winbond Electronics

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Surface Mount: YES;

IT ALSO OPERATES AT 2.7V @ 104MHZ

1

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

6 mm

67108864 bit

FLASH

8

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3.3

.8 mm

SPI

.00005 Amp

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5 mm

HARDWARE/SOFTWARE

W25M02GVZEIG by Winbond Electronics

W25M02GVZEIG

Winbond Electronics

W25M02GVZEIG by Winbond Electronics is a 2Gbit SLC NAND Flash Memory with 104MHz clock frequency, operating at -40 to 85°C. It features a small outline package with 8 terminals and synchronous operation, suitable for industrial applications requiring high-speed data storage in compact devices.

104 MHz

R-PDSO-N8

8 mm

2147483648 bit

FLASH

2

1

8

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX2

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3

.8 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

SLC NAND TYPE

6 mm