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INDUSTRIAL Flash Memory 964

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MTFC4GLGDM-AITZ by Micron Technology

MTFC4GLGDM-AITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words Code: 4G;

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

MTFC4GMWDM-3MAIT by Micron Technology

MTFC4GMWDM-3MAIT

Micron Technology

MTFC4GMWDM-3MAIT by Micron Technology is a 4GX8 flash memory with 34359738368 bit density. Operating in synchronous mode, it has a thin profile and fine pitch package style. Ideal for industrial applications, it supports parallel programming with a voltage range of 2.7V to 3.6V.

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

MTFC4GMWDQ-3MAIT by Micron Technology

MTFC4GMWDQ-3MAIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Words Code: 4G;

R-PBGA-B100

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

14 mm

MTFC4GLMDQ-AITZ by Micron Technology

MTFC4GLMDQ-AITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

52 MHz

R-PBGA-B100

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

OPEN-DRAIN

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

MLC NAND TYPE

14 mm

MTFC8GLWDQ-3LAITZ by Micron Technology

MTFC8GLWDQ-3LAITZ

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

14 mm

MT29F32G08CBACAWP-ITZ:C by Micron Technology

MT29F32G08CBACAWP-ITZ:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Organization: 4GX8;

R-PDSO-G48

18.4 mm

34359738368 bit

FLASH

8

1

48

4294967296 words

4G

ASYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

RPSEMC16DA1 by Panasonic

RPSEMC16DA1

Panasonic

Panasonic RPSEMC16DA1 is a 16GX8 MLC NAND flash memory with 17179869184 words capacity. Operating in industrial temperature range (-40 to 85 °C), it has a low profile, fine pitch grid array package style. Suitable for applications requiring high memory density and reliability, with a supply voltage range of 2.7V to 3.6V.

R-PBGA-B153

13 mm

137438953472 bit

FLASH CARD

8

3

1

153

17179869184 words

16G

ASYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

2.7

AEC-Q100

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

MLC NAND TYPE

11.5 mm

SFSD4096N1BW1MT-I-DF-111-STD by Swissbit Ag

SFSD4096N1BW1MT-I-DF-111-STD

Swissbit Ag

Swissbit Ag's SFSD4096N1BW1MT-I-DF-111-STD is a 4Gx8 Flash Memory with 34359738368-bit density. Operating at 50MHz clock frequency, it suits industrial applications with -40 to 85°C temp range. This serial memory chip has a compact rectangular shape for surface mount integration.

50 MHz

R-XUUC-N8

15 mm

34359738368 bit

FLASH CARD

8

1

8

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

SERIAL

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

NOT SPECIFIED

11 mm

MT35XL01GBBA1G12-0AAT by Micron Technology

MT35XL01GBBA1G12-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Length: 8 mm;

133 MHz

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

1

1

24

1073741824 words

1G

SYNCHRONOUS

105 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XL01GBBA2G12-0AAT by Micron Technology

MT35XL01GBBA2G12-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE;

133 MHz

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XL256ABA1G12-0AAT by Micron Technology

MT35XL256ABA1G12-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 268435456 words;

133 MHz

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XL256ABA2G12-0AAT by Micron Technology

MT35XL256ABA2G12-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3;

133 MHz

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XL512ABA1G12-0AAT by Micron Technology

MT35XL512ABA1G12-0AAT

Micron Technology

MT35XL512ABA1G12-0AAT by Micron Technology is a 512M Flash Memory with 536870912 bit density. It operates at 133 MHz clock frequency, has a thin profile grid array package style, and supports synchronous mode. Ideal for industrial applications requiring high memory capacity and reliable performance in harsh environments.

133 MHz

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XL512ABA2G12-0AAT by Micron Technology

MT35XL512ABA2G12-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

133 MHz

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XU256ABA1G12-0AAT by Micron Technology

MT35XU256ABA1G12-0AAT

Micron Technology

Micron Technology's MT35XU256ABA1G12-0AAT is a 256MX1 flash memory with 268M words. Operating at 166MHz, it has a voltage range of 1.7V to 2V and withstands industrial temperatures from -40°C to 105°C. Ideal for applications requiring high-speed synchronous operation in compact devices.

166 MHz

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT29F2G16ABBEAH4-IT:E by Micron Technology

MT29F2G16ABBEAH4-IT:E

Micron Technology

MT29F2G16ABBEAH4-IT:E by Micron Technology is a 128MX16 SLC NAND flash memory with 1.8V supply, operating from -40 to 85°C. It features a 1K word page size, 64K word sector size, and parallel interface. Ideal for industrial applications requiring fast access times and low standby current.

25 ns

YES

NO

R-PBGA-B63

11 mm

2147483648 bit

FLASH

16

1

2K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F1G01AAADDH4-ITX:D by Micron Technology

MT29F1G01AAADDH4-ITX:D

Micron Technology

Micron Technology's MT29F1G01AAADDH4-ITX:D is a 1GX1 SLC NAND flash memory with 1073741824-bit density. Operating at 3.3V, it offers synchronous mode and supports up to 50MHz clock frequency. Ideal for industrial applications requiring high-speed data storage in a compact GRID ARRAY package.

50 MHz

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

1

1

63

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

SLC NAND TYPE

9 mm

MTFC4GLGDQ-AITA by Micron Technology

MTFC4GLGDQ-AITA

Micron Technology

MTFC4GLGDQ-AITA by Micron Technology is a 4GX8 MLC NAND flash memory with 34359738368-bit density. Operating in synchronous mode, it has a low profile grid array package style and operates at industrial temperature grade. Ideal for applications requiring high memory capacity and fast data access speeds.

R-PBGA-B100

e1

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

14 mm

SST26VF016BEUIT-104I/SN by Microchip Technology

SST26VF016BEUIT-104I/SN

Microchip Technology

SST26VF016BEUIT-104I/SN by Microchip: 16MX1 organization, 104 MHz clock frequency, SPI serial bus type. Ideal for industrial applications requiring NOR flash memory with 100000 write/erase cycles endurance and 3V programming voltage.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-C48

4.89 mm

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

LSOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE, LOW PROFILE

SERIAL

3

TS 16949

1.68 mm

SPI

.000025 Amp

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

MT29F16G08ABABAWP-IT:BTR by Micron Technology

MT29F16G08ABABAWP-IT:BTR

Micron Technology

MT29F16G08ABABAWP-IT:BTR by Micron Technology is a 3.3V SLC NAND flash memory with 2GX8 organization, operating from -40 to 85°C. It features a parallel interface, 48 terminals in a small outline package, and offers 17179869184-bit memory density. Ideal for industrial applications requiring high-speed data storage and retrieval.

R-PDSO-G48

e3

18.4 mm

17179869184 bit

FLASH

8

1

48

2147483648 words

2G

ASYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

PF48F4400P0VBQ0A by Micron Technology

PF48F4400P0VBQ0A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 88; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V;

88 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

BOTTOM

YES

YES

NO

R-PBGA-B88

11 mm

536870912 bit

FLASH

16

1

8, 510

88

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TFBGA

BGA88,8X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

4

PARALLEL

NOT SPECIFIED

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000005 Amp

Flash Memories

51 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

NO

NOR TYPE

8 mm

PC48F4400P0VB00A by Micron Technology

PC48F4400P0VB00A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Length: 13 mm;

88 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

BOTTOM

YES

YES

NO

R-PBGA-B64

13 mm

536870912 bit

FLASH

16

1

8, 510

64

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4

PARALLEL

NOT SPECIFIED

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000005 Amp

Flash Memories

51 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NO

NOR TYPE

10 mm

MX25U12872FM2I02 by Macronix

MX25U12872FM2I02

Macronix

Macronix MX25U12872FM2I02 is a 128Mb NOR Flash Memory with SPI interface, operating at 133MHz clock frequency. It has 16Mx8 organization, 1.8V programming voltage, and endurance of 100K cycles. Ideal for industrial applications requiring high-speed data storage in compact form factor.

IT ALSO CAN BE CONFIGURED AS 64M X 2

4

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

5.28 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

1.8

2.16 mm

SPI

.000005 Amp

25 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

5.23 mm

HARDWARE

MT29F8G08ABACAWP-AIT:CTR by Micron Technology

MT29F8G08ABACAWP-AIT:CTR

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

YES

NO

60000 Write/Erase Cycles

R-PDSO-G48

18.4 mm

8589934592 bit

FLASH

8

1

4K

48

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4K

PARALLEL

YES

1.2 mm

256K

.0001 Amp

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

RC28F128J3F75F by Micron Technology

RC28F128J3F75F

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

75 ns

8

R-PBGA-B64

13 mm

134217728 bit

FLASH

16

1

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

10 mm

MT29F32G08ABAAAWP-IT:A by Micron Technology

MT29F32G08ABAAAWP-IT:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Memory Density: 34359738368 bit;

20 ns

YES

NO

R-PDSO-G48

18.4 mm

34359738368 bit

FLASH

8

1

4K

48

4294967296 words

4G

ASYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

8K

PARALLEL

3/3.3

3.3

Not Qualified

YES

1.2 mm

1M

.00001 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F32G08AFACAWP-ITZ:C by Micron Technology

MT29F32G08AFACAWP-ITZ:C

Micron Technology

MT29F32G08AFACAWP-ITZ:C by Micron Technology is a 3.3V SLC NAND Flash Memory with 4GX8 organization, 8K sectors, and 4K page size. It operates in industrial temperature range (-40 to 85 °C) and has a max access time of 20 ns. Ideal for applications requiring high-speed data storage in compact devices.

20 ns

YES

NO

R-PDSO-G48

18.4 mm

34359738368 bit

FLASH

8

1

8K

48

4294967296 words

4G

ASYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

3/3.3

3.3

Not Qualified

YES

1.2 mm

512K

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F1G01ABAFDSF-AAT:F by Micron Technology

MT29F1G01ABAFDSF-AAT:F

Micron Technology

Micron Technology's MT29F1G01ABAFDSF-AAT:F is a 3.3V SLC NAND Flash Memory with 1Gx1 organization, operating from -40 to 105°C. It offers 1073741824-bit memory density for industrial applications, featuring serial interface and small outline package ideal for space-constrained designs.

R-PDSO-G16

1073741824 bit

FLASH

1

1

16

1073741824 words

1G

ASYNCHRONOUS

105 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3.3

3.3

YES

CMOS

INDUSTRIAL

GULL WING

DUAL

NOT SPECIFIED

SLC NAND TYPE

MTFC4GLGDQ-AITZTR by Micron Technology

MTFC4GLGDQ-AITZTR

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Width: 14 mm;

4

R-PBGA-B100

e1

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

14 mm

MTFC64GAPALBH-IT by Micron Technology

MTFC64GAPALBH-IT

Micron Technology

MTFC64GAPALBH-IT by Micron Technology is a 64GX8 NAND flash memory with 3-STATE output, operating at up to 200 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and wide temperature range support from -40°C to 85°C.

200 MHz

R-PBGA-B153

e1

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

W25Q01JVSFIQ by Winbond Electronics

W25Q01JVSFIQ

Winbond Electronics

W25Q01JVSFIQ by Winbond Electronics is a 128Mx8 Flash Memory with synchronous operation at up to 133MHz. It has a small outline package, operates in industrial temperature range (-40°C to 85°C), and supports a memory density of 1073741824 bits. Ideal for applications requiring high-speed data storage in compact electronic devices.

2

133 MHz

R-PDSO-G16

10.31 mm

1073741824 bit

FLASH

8

1

16

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

2.64 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.49 mm

W25Q01JVTBIQ by Winbond Electronics

W25Q01JVTBIQ

Winbond Electronics

Winbond Electronics' W25Q01JVTBIQ is a 128Mx8 Flash Memory with 133MHz clock frequency, suitable for industrial applications. Operating at 3V, it offers synchronous operation and a memory density of 1073741824 bits. With a thin profile package style and bottom terminal position, it is ideal for space-constrained designs.

2

133 MHz

R-PBGA-B24

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

W25Q128JWBIQ by Winbond Electronics

W25Q128JWBIQ

Winbond Electronics

W25Q128JWBIQ by Winbond Electronics is a 16MX8 NOR type flash memory with 133 MHz clock frequency and SPI serial bus. It operates at 1.8V, has 100000 write/erase cycles endurance, and is ideal for industrial applications requiring high-speed synchronous operation in a compact grid array package.

1

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

134217728 bit

FLASH

8

1

24

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

1.2 mm

SPI

.00005 Amp

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

W25Q128JWEIQ by Winbond Electronics

W25Q128JWEIQ

Winbond Electronics

Winbond Electronics' W25Q128JWEIQ is a NOR type flash memory with 16Mx8 organization, operating at up to 133MHz. It features a small outline package, SPI serial bus type, and endurance of 100K write/erase cycles. Ideal for industrial applications requiring high-speed data storage in compact devices.

1

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

8 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

.8 mm

SPI

.00005 Amp

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

W25Q128JWPIQ by Winbond Electronics

W25Q128JWPIQ

Winbond Electronics

W25Q128JWPIQ by Winbond Electronics is a NOR type flash memory with 16Mx8 organization, operating at up to 133 MHz clock frequency. It offers 100000 write/erase cycles and is ideal for industrial applications requiring high-speed synchronous operation in a small outline package.

1

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

6 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

.8 mm

SPI

.00005 Amp

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5 mm

HARDWARE/SOFTWARE

W25Q128JWSIQ by Winbond Electronics

W25Q128JWSIQ

Winbond Electronics

W25Q128JWSIQ by Winbond Electronics is a NOR flash memory with 16MX8 organization, operating at 133 MHz. It features a 100000 Write/Erase cycle endurance and SPI serial bus type. Ideal for industrial applications requiring high-speed data storage in compact devices.

1

133 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

5.28 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

1.8

2.16 mm

SPI

.00005 Amp

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5.28 mm

HARDWARE/SOFTWARE

MTFC4GLMDQ-AITZTR by Micron Technology

MTFC4GLMDQ-AITZTR

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Words: 4294967296 words;

52 MHz

R-PBGA-B100

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

OPEN-DRAIN

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

MTFC64GASAONS-AAT by Micron Technology

MTFC64GASAONS-AAT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

52 MHz

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

105 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.461 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC64GASAONS-AITESTR by Micron Technology

MTFC64GASAONS-AITESTR

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: TFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3.3;

52 MHz

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

95 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.461 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

SST26WF016BAT-104I/CS by Microchip Technology

SST26WF016BAT-104I/CS

Microchip Technology

SST26WF016BAT-104I/CS by Microchip: 16MX1 organization, 104 MHz clock frequency, SPI serial bus type. Ideal for industrial applications requiring NOR flash memory with 100000 write/erase cycles endurance and 1.8V programming voltage.

104 MHz

100

100000 Write/Erase Cycles

R-PBGA-B8

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

BGA

BGA8,3X5,23

RECTANGULAR

GRID ARRAY

SERIAL

1.8

TS 16949

.64 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.886 mm

BOTTOM

NOR TYPE

HARDWARE/SOFTWARE

SST26VF016B-104I/SM70SVAO by Microchip Technology

SST26VF016B-104I/SM70SVAO

Microchip Technology

SST26VF016B-104I/SM70SVAO by Microchip: 16Mx1 NOR Flash Memory with 104MHz clock, SPI interface. Operating at -40 to 85°C, it offers 100K write/erase cycles for industrial applications. Package style is small outline, suitable for automotive and TS16949 compliant projects.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

5.26 mm

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

3

AEC-Q100; TS 16949

2.03 mm

SPI

.000045 Amp

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

5.25 mm

HARDWARE/SOFTWARE

SST26VF016B-104I/SN70SVAO by Microchip Technology

SST26VF016B-104I/SN70SVAO

Microchip Technology

SST26VF016B-104I/SN70SVAO by Microchip: 16MX1 NOR Flash Memory with 104 MHz clock, SPI serial bus for industrial applications. Features 100K write/erase cycles, operates at -40 to 85 °C, and has a small outline package style.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

3

AEC-Q100; TS 16949

1.75 mm

SPI

.000045 Amp

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

SST26VF016B-104V/SN70SVAO by Microchip Technology

SST26VF016B-104V/SN70SVAO

Microchip Technology

SST26VF016B-104V/SN70SVAO by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock freq., SPI serial bus. Ideal for industrial applications requiring high endurance and 100000 Write/Erase cycles. Operating range -40 to 105 °C with AEC-Q100 screening level.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

3

AEC-Q100; TS 16949

1.75 mm

SPI

.000045 Amp

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

SST26VF016BT-104I/SN70SVAO by Microchip Technology

SST26VF016BT-104I/SN70SVAO

Microchip Technology

Microchip Technology's SST26VF016BT-104I/SN70SVAO is a 16MX1 NOR type flash memory with a max clock frequency of 104 MHz. It operates in synchronous mode and has a min supply voltage of 2.7V. This flash memory is commonly used in industrial applications requiring high endurance and reliable data storage.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

3

AEC-Q100; TS 16949

1.75 mm

SPI

.000045 Amp

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

SST25PF040C-40V/MF18GVAO by Microchip Technology

SST25PF040C-40V/MF18GVAO

Microchip Technology

SST25PF040C-40V/MF18GVAO by Microchip: 512KX8 NOR Flash Memory, 40MHz clock freq., SPI serial bus. Ideal for industrial applications with -40 to 105 °C temp range, AEC-Q100 screening level.

40 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

6 mm

4194304 bit

FLASH

8

1

1

8

524288 words

512K

SYNCHRONOUS

105 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3.3

AEC-Q100

.8 mm

SPI

.00001 Amp

15 mA

3.6 V

2.3 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

SOFTWARE

SST25PF040C-40V/SN18GVAO by Microchip Technology

SST25PF040C-40V/SN18GVAO

Microchip Technology

SST25PF040C-40V/SN18GVAO by Microchip: 512KX8 NOR Flash Memory with 40 MHz clock, SPI interface. Ideal for industrial applications requiring 100000 Write/Erase cycles, operating b/w -40 to 105 °C. Small outline package, synchronous operation, and AEC-Q100 screening level make it versatile for various projects.

40 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

4194304 bit

FLASH

8

1

1

8

524288 words

512K

SYNCHRONOUS

105 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

3.3

AEC-Q100

1.75 mm

SPI

.00001 Amp

15 mA

3.6 V

2.3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

SOFTWARE

SST25PF040CT-40V/NP18GVAO by Microchip Technology

SST25PF040CT-40V/NP18GVAO

Microchip Technology

SST25PF040CT-40V/NP18GVAO by Microchip: 512KX8 NOR Flash Memory, 3.3V Vsup, SPI Interface. Ideal for industrial applications requiring high endurance with 100000 Write/Erase Cycles and operating temperature range of -40 to 105 °C. Small outline package with 0.6 mm seated height and very thin profile suitable for space-constrained designs.

40 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

3 mm

4194304 bit

FLASH

8

1

1

8

524288 words

512K

SYNCHRONOUS

105 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3.3

AEC-Q100

.6 mm

SPI

.00001 Amp

15 mA

3.6 V

2.3 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOR TYPE

2 mm

SOFTWARE

SST39VF3201C-70-4I-B3KE-T-VAO by Microchip Technology

SST39VF3201C-70-4I-B3KE-T-VAO

Microchip Technology

SST39VF3201C-70-4I-B3KE-T-VAO by Microchip: 2MX16 NOR Flash Memory, 3V, -40 to 85°C, AEC-Q100 for industrial applications. Features 8 sectors of sizes 4K and 32K words with a max access time of 70ns. Offers common flash interface, endurance of 100k cycles, and operates in asynchronous mode.

70 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

8 mm

33554432 bit

FLASH

16

1

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3

YES

AEC-Q100

1.2 mm

4K,32K

.00005 Amp

45 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm