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MT29F16G08ABABAWP-IT:BTR

Micron Technology

MT29F16G08ABABAWP-IT:BTR by Micron Technology

MT29F16G08ABABAWP-IT:BTR by Micron Technology is a 3.3V SLC NAND flash memory with 2GX8 organization, operating from -40 to 85°C. It features a parallel interface, 48 terminals in a small outline package, and offers 17179869184-bit memory density. Ideal for industrial applications requiring high-speed data storage and retrieval.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,758 parts In-Stock

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5,758

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Chip Stock

USA . 3,320 parts In-Stock

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3,320

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Digiode

USA . 1,172 parts In-Stock

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Nova Conductors

Japan . 37 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 769 parts In-Stock

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$1.000

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769

$1.000

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Advanced Electronics

New Zealand . 645 parts In-Stock

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$4.118

100+ parts

$4.077

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$3.912

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645

$4.118

$4.077

$3.912

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Aztec Data Supply Inc.

USA . 2,217 parts In-Stock

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$4.400

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2,217

$4.400

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AZTECH Wire

Italy . 211 parts In-Stock

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$15.296

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211

$15.296

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QUARKTWIN TECHNOLOGY LTD

USA . 14,541 parts In-Stock

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Perfect Parts

USA . 12,320 parts In-Stock

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Corphita

USA . 2,470 parts In-Stock

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2,470

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Argo Parts USA

USA . 1,935 parts In-Stock

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Continental Prestige Electronics

USA . 1,770 parts In-Stock

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Corohmni

South Africa . 1,157 parts In-Stock

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Kepictronics

USA . 1,000 parts In-Stock

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Bastille Electronics

Australia . 450 parts In-Stock

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450

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Microchip USA

USA . 301 parts In-Stock

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301

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Overview

Unlock the power of reliable and high-quality flash memory with the MT29F16G08ABABAWP-IT:BTR by Micron Technology. As a leader in the industry, Micron Technology offers a cutting-edge product that is perfect for a wide range of applications. With its small outline, thin profile package style and industrial temperature grade, this flash memory device provides exceptional performance and durability. Trust Micron Technology to deliver a superior product that meets your needs and exceeds your expectations. Elevate your projects with the MT29F16G08ABABAWP-IT:BTR and experience the value and benefits it brings to your work.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and protection for the flash memory, making it a reliable choice for long-term use.

Surface Mount:

YES - The surface mount feature allows for easy installation on a circuit board, saving time and effort during assembly.

Package Shape:

RECTANGULAR - The rectangular shape allows for efficient use of space, making it suitable for compact electronic devices.

Operating Mode:

ASYNCHRONOUS - The asynchronous operation enables fast data transfer speeds, improving overall performance of the flash memory.

Nominal Supply Voltage / Vsup (V):

3.3 - The nominal supply voltage of 3.3V ensures stable and efficient power delivery to the flash memory, optimizing its performance.

No. of Terminals:

48 - With 48 terminals, this flash memory offers a high level of connectivity, allowing for seamless integration with other components.

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE - The small outline and thin profile design make this flash memory suitable for space-constrained applications.

Maximum Operating Temperature:

85 °C - The high maximum operating temperature of 85°C ensures the flash memory can withstand harsh environmental conditions.

Organization:

2GX8 - The organization of 2GX8 provides a balance between capacity and speed, making it suitable for a wide range of applications.

Minimum Operating Temperature:

40 °C - The low minimum operating temperature of -40°C allows the flash memory to function reliably in extreme cold environments.

Terminal Finish:

Matte Tin (Sn) - The matte tin terminal finish offers excellent solderability and corrosion resistance, extending the lifespan of the flash memory.

Terminal Position:

DUAL - The dual terminal position provides added stability and reliability during installation and operation of the flash memory.

Maximum Seated Height:

1.2 mm - The low maximum seated height allows for a slim profile design, making this flash memory ideal for thin devices.

Width:

12 mm - The width of 12mm ensures the flash memory can fit easily into various electronic devices, enhancing its versatility.

Minimum Supply Voltage (Vsup):

2.7 V - The minimum supply voltage of 2.7V ensures energy efficiency and optimal performance for the flash memory.

Maximum Time At Peak Reflow Temperature (s):

30 - The maximum time at peak reflow temperature of 30 seconds ensures the flash memory can undergo solder reflow processes without damage.

Technical Specifications

Flash Memory MT29F16G08ABABAWP-IT:BTR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

17179869184 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

48

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

SLC NAND TYPE

Width:

12 mm

Trade Compliance

MT29F16G08ABABAWP-IT:BTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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