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SST26VF016B-104I/SM70SVAO

Microchip Technology

SST26VF016B-104I/SM70SVAO by Microchip Technology

SST26VF016B-104I/SM70SVAO by Microchip: 16Mx1 NOR Flash Memory with 104MHz clock, SPI interface. Operating at -40 to 85°C, it offers 100K write/erase cycles for industrial applications. Package style is small outline, suitable for automotive and TS16949 compliant projects.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 31,200 parts In-Stock

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Vyrian

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Nova Conductors

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Corohmni

South Africa . 281 parts In-Stock

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$4.149

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Aztec Data Supply Inc.

USA . 4,655 parts In-Stock

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Ampacity Inc.

Singapore . 551 parts In-Stock

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Semicontronic

India . 553 parts In-Stock

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$13.650

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$13.580

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AZTECH Wire

Italy . 236 parts In-Stock

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$16.545

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LOOK Integrated Logistics

Peru . 6,767 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Continental Prestige Electronics

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Argo Parts USA

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Microchip USA

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NIA Electronics

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Ledger Components

France . 1,654 parts In-Stock

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Montano Global Distributors

Canada . 1,511 parts In-Stock

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LMD Electronica

Estonia . 931 parts In-Stock

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Modulus Dynamics

Lithuania . 650 parts In-Stock

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Bastille Electronics

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Overview

Unlock the power of reliable and high-quality flash memory storage with the SST26VF016B-104I/SM70SVAO from Microchip Technology. Designed to meet AEC-Q100 and TS 16949 standards, this small outline package offers a seamless integration for various industrial applications. With 16MX1 organization and 3-STATE output characteristics, this NOR type memory chip provides 100,000 write/erase cycles and a minimum data retention time of 100 years. Trust in Microchip's cutting-edge technology and enhance your products with the best-in-class performance and durability that the SST26VF016B-104I/SM70SVAO has to offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the flash memory, making it suitable for various applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on PCBs, saving space and simplifying assembly processes.

Package Shape: RECTANGULAR

Rectangular package shape is commonly used and fits well in standard designs, making integration seamless.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures accurate and reliable data transfer, enhancing performance and efficiency.

Nominal Supply Voltage / Vsup (V): 3

Operates at a standard voltage level of 3V, making it compatible and easy to integrate with other components.

Maximum Operating Temperature: 85 °C

Can withstand high operating temperatures of up to 85°C, suitable for industrial environments.

Write Protection: HARDWARE/SOFTWARE

Provides options for hardware and software write protection, ensuring data security and preventing accidental data alteration.

Memory Density: 16777216 bit

High memory density allows for storing large amounts of data in a compact form factor, making it ideal for storage-intensive applications.

Technical Specifications

Flash Memory SST26VF016B-104I/SM70SVAO attributes and parameters. Explore more Flash Memory devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

104 MHz

Minimum Data Retention Time:

100

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

Length:

5.26 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX1

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Programming Voltage (V):

3

Screening Level:

AEC-Q100; TS 16949

Maximum Seated Height:

2.03 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000045 Amp

Maximum Supply Current:

25 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Type:

NOR TYPE

Width:

5.25 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

SST26VF016B-104I/SM70SVAO Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.1.A

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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