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LE25U40CQE-AH

Onsemi

LE25U40CQE-AH by Onsemi

LE25U40CQE-AH by Onsemi is a NOR type Flash Memory with 512Kx8 organization, operating at 2.5V and 40MHz clock frequency. Suitable for industrial applications, it offers 100000 write/erase cycles, SPI serial bus interface, and a compact package style of small outline with very thin profile.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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NexGen Digital

USA . 3,940 parts In-Stock

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Vyrian

USA . 2,482 parts In-Stock

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Digiode

USA . 1,731 parts In-Stock

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1,731

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Distributors (Availability)

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AZTECH Wire

Italy . 1,200 parts In-Stock

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$20.210

100+ parts

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1,200

$20.210

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Component Stockers USA

USA . 466 parts In-Stock

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$99.990

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466

$99.990

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Perfect Parts

USA . 11,424 parts In-Stock

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SupplyDigital Components

Austria . 5,588 parts In-Stock

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TANS Electronics

Latvia . 5,063 parts In-Stock

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5,063

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Kulean Microsystems

USA . 4,618 parts In-Stock

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Problanco Electronics

Mexico . 4,603 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Corphita

USA . 2,040 parts In-Stock

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2,040

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Kepictronics

USA . 2,000 parts In-Stock

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Assy Fe

Spain . 2,000 parts In-Stock

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UHIMA Technologies

Türkiye . 628 parts In-Stock

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628

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Microchip USA

USA . 493 parts In-Stock

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493

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Corohmni

South Africa . 169 parts In-Stock

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Overview

Discover the Onsemi LE25U40CQE-AH, a high-quality flash memory that offers reliable performance and versatility. Manufactured by Onsemi, a leader in semiconductor technology, this product is designed to meet the demands of various applications. With its small outline and very thin profile package style, this flash memory is perfect for industrial use. Providing 512Kx8 organization and 100,000 write/erase cycles, the LE25U40CQE-AH ensures long-lasting durability and efficient operation. Trust Onsemi for top-notch quality and innovative solutions for your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers durability and protection for the flash memory, making it suitable for various environments.

Nominal Supply Voltage / Vsup (V): 2.5

The low nominal supply voltage of 2.5V ensures efficient power consumption, which is important for portable devices and energy-efficient systems.

Operating Mode: SYNCHRONOUS

The synchronous operating mode allows for synchronized data transfers, enabling high-speed performance and reliable operation.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this flash memory can withstand a wide range of environmental conditions, making it suitable for industrial use.

Write Protection: HARDWARE/SOFTWARE

The option for both hardware and software write protection ensures data security and prevents accidental data loss or corruption.

Endurance: 100000 Write/Erase Cycles

With a high endurance of 100,000 write/erase cycles, this flash memory provides long-lasting reliability and durability for frequent data read/write operations.

Technical Specifications

Flash Memory LE25U40CQE-AH attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

40 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e3

Length:

6 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

8

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Power Supplies (V):

2.5/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

15 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Type:

NOR TYPE

Width:

5 mm

Maximum Write Cycle Time (tWC):

15 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

LE25U40CQE-AH Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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