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MT29F4G08ABBDAH4-ITX:D

Micron Technology

MT29F4G08ABBDAH4-ITX:D by Micron Technology

MT29F4G08ABBDAH4-ITX:D by Micron Technology is a 512Mx8 SLC NAND flash memory with 4K sectors, operating at 1.8V. It features a very thin profile grid array package, suitable for industrial applications requiring fast access times of 25ns and low standby current of 0.00005Amp.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,595 parts In-Stock

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1,595

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Vyrian

USA . 1,585 parts In-Stock

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1,585

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Sunrise Surplus Inc.

USA . 700 parts In-Stock

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700

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Nova Conductors

Japan . 550 parts In-Stock

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550

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 4,763 parts In-Stock

1+ parts

$2.620

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4,763

$2.620

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Corohmni

South Africa . 45 parts In-Stock

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$4.244

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45

$4.244

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Semicontronic

India . 221 parts In-Stock

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$19.000

100+ parts

$18.525

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$18.430

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221

$19.000

$18.525

$18.430

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AZTECH Wire

Italy . 498 parts In-Stock

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$19.391

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498

$19.391

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Legend Electronics Inc. (Excess)

USA . 11,780 parts In-Stock

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11,780

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Perfect Parts

USA . 5,265 parts In-Stock

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5,265

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Continental Prestige Electronics

USA . 4,844 parts In-Stock

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4,844

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Argo Parts USA

USA . 2,054 parts In-Stock

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2,054

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Corphita

USA . 308 parts In-Stock

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308

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Bastille Electronics

Australia . 10 parts In-Stock

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10

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Overview

Unlock the power of reliable and high-quality flash memory with the MT29F4G08ABBDAH4-ITX:D by Micron Technology. Designed for industrial applications, this SLC NAND type memory offers a wide temperature range and low standby current, making it ideal for demanding environments. With a focus on performance and durability, Micron Technology ensures that you can trust your data storage needs to their products. Experience seamless operation, fast access times, and efficient programming voltage with this cutting-edge flash memory solution. Trust Micron Technology to provide you with the quality and reliability you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the flash memory.

Nominal Supply Voltage / Vsup (V): 1.8

Efficient power usage with a low supply voltage.

Maximum Operating Temperature: 85 °C

Suitable for industrial environments with a wide temperature range.

Organization: 512MX8

High organizational capacity for storing large amounts of data.

Page Size (words): 2K

Optimal page size for efficient data storage and retrieval.

Technology: CMOS

Uses CMOS technology for low power consumption and high speed operation.

Memory Density: 4294967296 bit

High memory density for storing a large amount of data.

Maximum Access Time: 25 ns

Fast access time for quick data retrieval.

Technical Specifications

Flash Memory MT29F4G08ABBDAH4-ITX:D attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

25 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B63

Length:

11 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

4K

No. of Terminals:

63

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA63,10X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Page Size (words):

2K

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1 mm

Sector Size (Words):

128K

Maximum Standby Current:

.00005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

SLC NAND TYPE

Width:

9 mm

Trade Compliance

MT29F4G08ABBDAH4-ITX:D Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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