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MT29F4G08ABADAH4-AITX:D

Micron Technology

MT29F4G08ABADAH4-AITX:D by Micron Technology

Micron Technology's MT29F4G08ABADAH4-AITX:D is a 512MX8 SLC NAND flash memory with 4294967296 bit density. Operating at 3.3V, it has a programming voltage of 1.8V and supports industrial temperature grade applications. With a compact size of 11mm x 9mm x 1mm, this flash memory features parallel interface and very thin profile package for high-speed data storage solutions.

Median Price

$6.170

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 20 parts In-Stock

1+ parts

$6.170

100+ parts

$5.150

1k+ parts

$4.840

10k+ parts

-

20

$6.170

$5.150

$4.840

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$5.550

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$5.550

-

-

-

Digiode

USA . 1,637 parts In-Stock

1+ parts

$6.336

100+ parts

-

1k+ parts

-

10k+ parts

-

1,637

$6.336

-

-

-

Vyrian

USA . 7,576 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,576

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aranea Global

USA . 50 parts In-Stock

1+ parts

$5.439

100+ parts

-

1k+ parts

$5.221

10k+ parts

-

50

$5.439

-

$5.221

-

Continental Prestige Electronics

USA . 579 parts In-Stock

1+ parts

$5.550

100+ parts

-

1k+ parts

-

10k+ parts

$5.439

579

$5.550

-

-

$5.439

Semicontronic

India . 433 parts In-Stock

1+ parts

$5.670

100+ parts

$5.528

1k+ parts

$5.500

10k+ parts

-

433

$5.670

$5.528

$5.500

-

Ampacity Inc.

Singapore . 47 parts In-Stock

1+ parts

$5.670

100+ parts

-

1k+ parts

-

10k+ parts

-

47

$5.670

-

-

-

Corphita

USA . 81 parts In-Stock

1+ parts

$6.003

100+ parts

-

1k+ parts

-

10k+ parts

-

81

$6.003

-

-

-

AZTECH Wire

Italy . 595 parts In-Stock

1+ parts

$12.461

100+ parts

-

1k+ parts

-

10k+ parts

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595

$12.461

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 16,932 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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16,932

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-

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Argo Parts USA

USA . 4,226 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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4,226

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-

-

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Overview

Unlock the power of reliable data storage with the MT29F4G08ABADAH4-AITX:D by Micron Technology. Crafted with precision and expertise, this Flash Memory device guarantees top-notch performance for your applications. With a robust package body material and versatile operating modes, this product offers a seamless experience in various industrial settings. Say goodbye to data loss worries and hello to efficient data management with Micron Technology's cutting-edge technology. Choose quality, choose reliability, choose Micron Technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the flash memory, ensuring it can withstand harsh environments and handling.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal voltage of 3.3V makes this flash memory power-efficient and suitable for a wide range of devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexibility and efficient data transfer, making this flash memory suitable for various applications.

Memory Density: 4294967296 bit

With a high memory density, this flash memory can store a large amount of data in a compact space, making it ideal for devices with limited storage capacity.

Technology: CMOS

The CMOS technology used in this flash memory ensures low power consumption and reliable performance, making it a cost-effective and efficient choice for electronic devices.

Technical Specifications

Flash Memory MT29F4G08ABADAH4-AITX:D attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B63

Length:

11 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

63

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

1.8

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

SLC NAND TYPE

Width:

9 mm

Trade Compliance

MT29F4G08ABADAH4-AITX:D Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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