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MTFC8GAMALBH-IT

Micron Technology

MTFC8GAMALBH-IT by Micron Technology

MTFC8GAMALBH-IT by Micron Technology is a NAND flash memory with 8GX8 organization, operating at up to 200 MHz. It features a thin profile grid array package and is suitable for industrial applications requiring high memory density and fast data transfer speeds.

Median Price

$9.300

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 65 parts In-Stock

1+ parts

$9.300

100+ parts

-

1k+ parts

-

10k+ parts

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65

$9.300

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Chip Stock

USA . 15,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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15,300

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Bristol Electronics

USA . 5,393 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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5,393

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-

-

-

Dan-Mar Components

USA . 5,393 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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5,393

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-

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Vyrian

USA . 2,003 parts In-Stock

1+ parts

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2,003

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Digiode

USA . 758 parts In-Stock

1+ parts

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758

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 253 parts In-Stock

1+ parts

$1.000

100+ parts

-

1k+ parts

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253

$1.000

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$9.114

100+ parts

-

1k+ parts

$8.750

10k+ parts

-

2,000

$9.114

-

$8.750

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AZTECH Wire

Italy . 499 parts In-Stock

1+ parts

$12.041

100+ parts

-

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499

$12.041

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XScomponents

USA . 5,396 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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5,396

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Argo Parts USA

USA . 4,882 parts In-Stock

1+ parts

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100+ parts

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4,882

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Continental Prestige Electronics

USA . 2,680 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,680

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Authorized Procurement Solutions

USA . 710 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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710

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Corphita

USA . 232 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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232

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Overview

Enhance your devices with the cutting-edge MTFC8GAMALBH-IT Flash Memory from Micron Technology. Known for their top-quality products, Micron Technology offers reliable and durable solutions for all your storage needs. This flash memory boasts a wide range of applications, providing seamless performance in various devices. With its high capacity and advanced technology, this NAND type memory guarantees fast and efficient data storage. Upgrade your systems with Micron Technology's MTFC8GAMALBH-IT Flash Memory and experience enhanced functionality like never before.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for the flash memory component.

Surface Mount:

YES - Easy installation onto circuit boards for efficient use of space.

Package Shape:

RECTANGULAR - Standard shape for compatibility with various devices and systems.

Operating Mode:

SYNCHRONOUS - Allows for high-speed data transfer and processing.

No. of Terminals:

153 - Provides ample connections for reliable data transmission.

Package Style:

GRID ARRAY, THIN PROFILE, FINE PITCH - Offers a compact design for space-constrained applications.

Maximum Operating Temperature:

85 °C - Ensures reliable performance in various environmental conditions.

Organization:

8GX8 - Provides a high capacity and efficient organization of memory cells.

Output Characteristics:

3-STATE - Enables flexible control of output signals for diverse applications.

Minimum Operating Temperature:

40 °C - Ensures functionality even in extreme temperature conditions.

Terminal Position:

BOTTOM - Simplifies installation and connection to other components.

Maximum Seated Height:

1.1 mm - Low profile design for fitting into slim devices.

Maximum Clock Frequency (fCLK):

200 MHz - High-speed processing for quick access to stored data.

Width:

11.5 mm - Compact size for easy integration into various electronic devices.

Minimum Supply Voltage (Vsup):

2.7 V - Low power consumption for energy-efficient operation.

Type:

NAND TYPE - Reliable storage technology known for its high capacity and durability.

Length:

13 mm - Suitable length for accommodating the required number of memory cells.

Programming Voltage (V):

2.7 - Effective voltage for programming and writing data to the memory.

Temperature Grade:

INDUSTRIAL - Designed to withstand harsh industrial operating conditions.

Technology:

CMOS - Provides low power consumption and high speed performance.

Parallel or Serial:

PARALLEL - Supports parallel data transfer for faster read and write operations.

Terminal Form:

BALL - Ensures secure connections for reliable data transmission.

No. of Words:

8589934592 words - Provides a large storage capacity for extensive data storage needs.

Memory Width:

8 - Efficient data processing with an 8-bit memory width.

Terminal Pitch:

0.5 mm - Compact terminal pitch for a space-efficient design.

No. of Words Code:

8G - Indicates a high memory capacity of 8 Gigawords.

Maximum Supply Voltage (Vsup):

3.6 V - Allows for safe operation within specified voltage limits.

Memory Density:

68719476736 bit - Offers a high density memory storage for extensive data storage requirements.

Memory IC Type:

FLASH CARD - Suitable for portable storage solutions with fast read and write speeds.

Technical Specifications

Flash Memory MTFC8GAMALBH-IT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

200 MHz

JESD-30 Code:

R-PBGA-B153

Length:

13 mm

Memory Density:

68719476736 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

8589934592 words

No. of Words Code:

8G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8GX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Programming Voltage (V):

2.7

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Type:

NAND TYPE

Width:

11.5 mm

Trade Compliance

MTFC8GAMALBH-IT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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