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MTFDHBL256TDQ-1AT12ATYY

Micron Technology

MTFDHBL256TDQ-1AT12ATYY by Micron Technology

Micron Technology's MTFDHBL256TDQ-1AT12ATYY is a RECTANGULAR Flash Memory with 256GX8 organization, TLC NAND TYPE, and 2199023255552 bit memory density. It operates in ASYNCHRONOUS mode at temperatures ranging from -40 to 105 °C, making it ideal for INDUSTRIAL applications requiring high-speed data storage.

Median Price

$148.418

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 72 parts In-Stock

1+ parts

$141.538

100+ parts

$120.240

1k+ parts

-

10k+ parts

-

72

$141.538

$120.240

-

-

DigiKey

USA . 1 parts In-Stock

1+ parts

$146.550

100+ parts

-

1k+ parts

-

10k+ parts

-

1

$146.550

-

-

-

Farnell

UK . 48 parts In-Stock

1+ parts

$148.418

100+ parts

-

1k+ parts

-

10k+ parts

-

48

$148.418

-

-

-

Mouser Electronics

USA . 697 parts In-Stock

1+ parts

$148.460

100+ parts

$125.530

1k+ parts

-

10k+ parts

-

697

$148.460

$125.530

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Element14

Singapore . 48 parts In-Stock

1+ parts

$165.719

100+ parts

-

1k+ parts

-

10k+ parts

-

48

$165.719

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 709 parts In-Stock

1+ parts

$96.140

100+ parts

-

1k+ parts

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10k+ parts

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709

$96.140

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-

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Vyrian

USA . 6,308 parts In-Stock

1+ parts

-

100+ parts

-

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6,308

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Chip Stock

USA . 210 parts In-Stock

1+ parts

-

100+ parts

-

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210

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Bristol Electronics

USA . 93 parts In-Stock

1+ parts

-

100+ parts

-

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93

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Nova Conductors

Japan . 38 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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38

-

-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$3.501

100+ parts

$3.186

1k+ parts

$2.871

10k+ parts

-

350

$3.501

$3.186

$2.871

-

Ampacity Inc.

Singapore . 38 parts In-Stock

1+ parts

$86.020

100+ parts

-

1k+ parts

-

10k+ parts

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38

$86.020

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-

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Corphita

USA . 433 parts In-Stock

1+ parts

$91.080

100+ parts

-

1k+ parts

-

10k+ parts

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433

$91.080

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Continental Prestige Electronics

USA . 72 parts In-Stock

1+ parts

$136.190

100+ parts

-

1k+ parts

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10k+ parts

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72

$136.190

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Authorized Procurement Solutions

USA . 107 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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107

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Aranea Global

USA . 50 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

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50

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-

Overview

Experience the exceptional quality and reliability of Micron Technology with the MTFDHBL256TDQ-1AT12ATYY Flash Memory. This advanced technology offers unmatched performance and durability, making it perfect for a wide range of applications in the industrial sector. With its high memory density and industrial temperature grade, this flash memory provides customers with superior value and benefits, ensuring seamless operation and optimal efficiency. Trust Micron Technology to deliver top-notch products that exceed your expectations.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and quick installation on circuit boards, making the product suitable for mass production and integration into various electronic devices.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature, this flash memory can withstand harsh environmental conditions and extended use without compromising performance.

Memory IC Type: FLASH MODULE

The flash module design allows for efficient storage and retrieval of data, making the product reliable and ideal for applications that require fast and secure data storage.

Technical Specifications

Flash Memory MTFDHBL256TDQ-1AT12ATYY attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-XBGA-B

Memory Density:

2199023255552 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Words:

274877906944 words

No. of Words Code:

256G

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256GX8

Package Body Material:

UNSPECIFIED

Package Shape:

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Position:

BOTTOM

Type:

TLC NAND TYPE

Trade Compliance

MTFDHBL256TDQ-1AT12ATYY Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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