Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
NUD3105LT1G
Onsemi
NUD3105LT1G by Onsemi is a N-CHANNEL FET with 6V DS breakdown voltage, 0.5A ID, and 1.3 ohm RDS(on). Ideal for switching applications, it features a built-in diode and resistor in a small outline package for surface mount assembly. Operating at up to 150°C, it uses metal-oxide semiconductor technology with matte tin finish.
LOGIC LEVEL COMPATIBLE
SINGLE WITH BUILT-IN DIODE AND RESISTOR
6 V
.5 A
1.3 ohm
METAL-OXIDE SEMICONDUCTOR
TO-236
R-PDSO-G3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
Not Qualified
YES
Matte Tin (Sn) - annealed
GULL WING
DUAL
40
SWITCHING
SILICON
CSD25301W1015
Texas Instruments
CSD25301W1015 by Texas Instruments is a P-CHANNEL FET with 20V DS Breakdown Voltage and 2.2A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR package, suitable for surface mount assembly at temperatures up to 150°C.
SINGLE WITH BUILT-IN DIODE
20 V
2.2 A
.22 ohm
40 pF
R-PBGA-B6
e1
6
GRID ARRAY
P-CHANNEL
1.5 W
Other Transistors
TIN SILVER COPPER
BALL
BOTTOM
30
IRF3000PBF
International Rectifier
IRF3000PBF by International Rectifier is a N-CHANNEL FET with 300V DS Breakdown Voltage, ideal for SWITCHING applications. It features 1.6A Drain Current, 0.4 ohm On Resistance, and operates at up to 150°C. This SMALL OUTLINE transistor has GULL WING terminals and is designed for ENHANCEMENT MODE operation.
300 V
1.6 A
.0016 A
.4 ohm
MS-012AA
R-PDSO-G8
8
2.5 W
FET General Purpose Power
MATTE TIN
NTJS3157NT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; No. of Terminals: 6; Terminal Form: GULL WING;
3.2 A
.06 ohm
R-PDSO-G6
1 W
TIN
NTJS3157NT4
NTJS3157NT4 by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 3.2A Drain Current, and 0.06 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 1W and can withstand temperatures up to 150 °C.
e0
235
TIN LEAD
NTMFS4708NT1G
NTMFS4708NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 7.8A ID, and 0.01 ohm RDS(ON). Ideal for SWITCHING applications due to ENHANCEMENT MODE operation. Features include SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package style.
DRAIN
30 V
7.8 A
.01 ohm
R-PDSO-F5
5
FLAT
STS5DPF20L
STMicroelectronics
STS5DPF20L by STMicroelectronics is a P-channel MOSFET designed for switching applications. It features a max drain current of 5 A, a breakdown voltage of 20 V, and operates in enhancement mode. Its compact SO8 package ensures efficient surface mounting.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
5 A
.075 ohm
2
2 W
STS8C5H30L
STS8C5H30L by STMicroelectronics is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It has 30V DS breakdown voltage, 4.2A max drain current, and 0.025 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Package: SO-8, surface mountable with Gull Wing terminals.
4.2 A
8 A
.025 ohm
20 pF
N-CHANNEL AND P-CHANNEL
NDS0610_NL
Fairchild Semiconductor
NDS0610_NL by Fairchild Semiconductor is a P-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 0.12A Drain Current, and 10 ohm On Resistance. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 150°C.
60 V
.12 A
10 ohm
5 pF
.36 W
SI2305DS-T1-E3
Vishay Intertechnology
SI2305DS-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET with 8V DS Breakdown Voltage, 12A IDM, and 0.052 ohm RDS(ON). Ideal for small outline applications requiring high drain current and low on-resistance in enhancement mode operation.
8 V
3.5 A
.052 ohm
TO-236AB
12 A
Matte Tin (Sn)
SI4401DY-T1-E3
SI4401DY-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET with 40V DS Breakdown Voltage, 8.7A ID, and 0.0155 ohm RDS(ON). Ideal for applications requiring high drain current capability in compact designs.
40 V
8.7 A
.0155 ohm
3 W
BFR31LT1G
BFR31LT1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It features GULL WING terminals, operates in DEPLETION MODE, and has a max power dissipation of 0.3W. This SMALL OUTLINE transistor has a peak reflow temperature of 260°C and feedback capacitance of 1.5pF.
SINGLE
25 V
JUNCTION
1.5 pF
DEPLETION MODE
.3 W
Tin (Sn)
AMPLIFIER
NTJS3157NT2G
NTJS3157NT2G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage and 3.2A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at up to 150°C, this MOSFET has 0.06 ohm On Resistance and Matte Tin Terminal Finish.
NTJS3157NT2
NTJS3157NT2 by Onsemi is a small signal N-channel FET with a min DS breakdown voltage of 20V. It is commonly used for switching applications due to its single configuration with built-in diode and max drain current of 3.2A.
SI6544BDQ-T1-E3
Vishay Intertechnology's SI6544BDQ-T1-E3 is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Features include 30V DS breakdown voltage, 0.032 ohm RDS(on), and 3.7A ID max current. Ideal for applications requiring high efficiency in compact designs like power management systems.
3.7 A
.032 ohm
20
IRF7807VD2PBF
IRF7807VD2PBF by International Rectifier is a N-CHANNEL FET with 30V DS Breakdown Voltage and 8.3A Drain Current. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has 0.025 ohm On Resistance and can handle up to 2.5W power dissipation at 150°C max temperature.
8.3 A
NTJS3151PT2
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .625 W; Maximum Drain-Source On Resistance: .06 ohm; Terminal Form: GULL WING;
12 V
2.7 A
.625 W
NTMFS4119NT3G
NTMFS4119NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 18A Drain Current, and 0.0035 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with 150 °C max operating temp.
18 A
11 A
.0035 ohm
6.1 W
NTS2101PT1
NTS2101PT1 by Onsemi is a P-CHANNEL FET with 8V DS breakdown voltage and 3.7A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a max power dissipation of 0.96W. This small outline transistor has a 0.1 ohm on resistance and can withstand temperatures up to 150 °C.
1.4 A
.1 ohm
.96 W
Tin/Lead (Sn80Pb20)
NOT SPECIFIED
MMBF5457LT1G
MMBF5457LT1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It features DEPLETION MODE operation, GULL WING terminals, and 3pF Crss. With a max power dissipation of 0.225W and operating temperature up to 150°C, it is suitable for small outline packages in electronic circuits.
3 pF
.225 W
NTQD6866R2G
NTQD6866R2G by Onsemi is a N-CHANNEL FET with 20V DS breakdown voltage and 6.9A max drain current, ideal for switching applications. Featuring common drain configuration, it has 2 elements with built-in diode in a small outline package style, operating at up to 150 °C.
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
6.9 A
4.7 A
175 pF
.78 W
NTTD4401FR2G
NTTD4401FR2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 2.4A, 0.09 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a small outline package style and GULL WING terminals, it offers high performance in compact designs at up to 150 °C operating temperature.
2.4 A
.09 ohm
1.42 W
TP0202K-T1-E3
Vishay Intertechnology's TP0202K-T1-E3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 0.385A Drain Current, and 1.4 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with GULL WING terminals and ENHANCEMENT MODE operation up to 150°C.
.385 A
1.4 ohm
.35 W
NTMFS4121NT1G
NTMFS4121NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 17A Drain Current, and 0.00525 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Package: PLASTIC/EPOXY, Surface Mountable, Operating in ENHANCEMENT MODE.
17 A
.00525 ohm
6.6 W
NTMFS4701NT1G
NTMFS4701NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 7.7A ID, and 0.008 ohm RDS(ON). It's used for SWITCHING applications in ENHANCEMENT MODE with built-in DIODE. This SMALL OUTLINE transistor has METAL-OXIDE SEMICONDUCTOR tech and operates in DUAL terminal position.
7.7 A
.008 ohm
NTMFS4707NT3G
NTMFS4707NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 6.9A ID, and 0.013 ohm RDS(ON). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a SINGLE configuration with BUILT-IN DIODE and operates in SURFACE MOUNT package style.
.013 ohm
NTMS4706NR2
NTMS4706NR2 by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 6.4A ID, and 0.012 ohm RDS(on). It is used for switching applications in enhancement mode with built-in diode. This small outline transistor has GULL WING terminals and operates in surface mount configuration.
6.4 A
.012 ohm
NTR2101PT1
NTR2101PT1 by Onsemi is a P-CHANNEL FET with 8V DS Breakdown Voltage, 3.7A ID, and 0.052 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals, operates up to 150 °C, and has a power dissipation of 0.96W.
NTR1P02T3G
NTR1P02T3G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 1A, 0.18 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals and can handle up to 150 °C operating temperature.
1 A
.18 ohm
.4 W
NTTS2P03R2G
NTTS2P03R2G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 2.1A Drain Current. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology. With a max temp of 150 °C, it has a small outline package style for efficient performance.
2.1 A
.085 ohm
S-PDSO-G8
SQUARE
1.78 W
BSS225
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
600 V
.09 A
45 ohm
4.4 pF
R-PSSO-F3
TT8M2TR
ROHM
ROHM's TT8M2TR is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has max drain current of 2.5A and on-resistance of 0.09 ohm. Operating at up to 150°C, this MOSFET comes in a small outline package with 8 terminals.
2.5 A
R-PDSO-F8
1.25 W
10
BSS84P-E6327
BSS84P-E6327 by Infineon Technologies is a P-CHANNEL FET with 60V DS breakdown voltage, 0.17A max drain current, and 8 ohm max on resistance. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology.
.17 A
8 ohm
BSR58LT1G
BSR58LT1G by Onsemi is a N-CHANNEL FET with 3 terminals in a small outline package. Operating in depletion mode, it has a max power dissipation of 0.35W and drain-source resistance of 60 ohm. Ideal for chopper applications, this transistor can withstand up to 150°C operating temperature.
60 ohm
CHOPPER
MMDF2P02HDR2G
MMDF2P02HDR2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.3A Drain Current. Ideal for SWITCHING applications, it features a RECTANGULAR package, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max power dissipation of 2W and operating temperature range from -55 to 150 °C, it offers reliable performance in various electronic circuits.
3.3 A
.16 ohm
232 pF
-55 Cel
MMDF3N04HDR2G
MMDF3N04HDR2G by Onsemi is a N-CHANNEL FET with 40V DS breakdown voltage and 3.4A max drain current, ideal for switching applications. It features a separate configuration with built-in diode, GULL WING terminals, and operates in enhancement mode. This small outline transistor has a max power dissipation of 2W and can withstand temperatures up to 150 °C.
LOGIC LEVEL COMPATIBLE, AVALANCHE ENERGY RATED
3.4 A
.08 ohm
96 pF
NTMS3P03R2G
NTMS3P03R2G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 3.86A, 0.085 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a peak reflow temp of 260 °C and small outline package style, it offers high performance in various electronic devices.
AVALANCHE RATED
3.86 A
2.34 A
135 pF
.73 W
NTMS4503NR2G
NTMS4503NR2G by Onsemi is a N-CHANNEL FET with 28V DS Breakdown Voltage, 9A Drain Current, and 0.008 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating at up to 150 °C, it features a built-in DIODE and METAL-OXIDE SEMICONDUCTOR technology.
28 V
9 A
NTMS4700NR2G
NTMS4700NR2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 8.6A ID. Ideal for SWITCHING applications, it features 0.01 ohm RDS(on) and operates in ENHANCEMENT MODE. This GULL WING package has 8 terminals and can withstand peak reflow at 260 °C.
8.6 A
NTMS4N01R2G
NTMS4N01R2G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 5.9A, 0.04ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and PLASTIC/EPOXY body material, it offers high performance in small outline packages.
5.9 A
.04 ohm
100 pF
.77 W
NTMSD3P102R2G
NTMSD3P102R2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 2.34A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at up to 150 °C, this MOSFET has 0.085 ohm On Resistance and 135pF Feedback Capacitance.
NTMSD3P303R2G
NTMSD3P303R2G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 2.34A, 0.085 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and a RECTANGULAR package shape, it offers high performance in small outline designs at up to 150 °C operating temperature.
NUD3048MT1G
NUD3048MT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a built-in diode and resistor, operates in enhancement mode, and has a max drain current of 1.2A. With surface mount capability and small outline package style, it offers high performance in compact designs.
100 V
1.2 A
.82 ohm
1.56 W
NUD3105DMT1G
NUD3105DMT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 6V breakdown voltage, 0.5A drain current, and 1.3 ohm on resistance. Ideal for surface mount designs in small outline packages at temperatures up to 150°C.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
BSS84V-7
Diodes Incorporated
BSS84V-7 by Diodes Inc. is a P-channel FET with 50V breakdown voltage, ideal for switching applications. It features 2 elements with built-in diode in a small outline package, operating in enhancement mode at max temp of 150°C. With 0.13A drain current and 10Ω on-resistance, it offers efficient performance in compact designs.
50 V
.13 A
12 pF
R-PDSO-F6
IPB80N06S3-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 135 W; Maximum Operating Temperature: 175 Cel; Qualification: Not Qualified;
55 V
80 A
.0065 ohm
TO-263AB
R-PSSO-G2
175 Cel
245
135 W
NTA4153NT1
NTA4153NT1 by Onsemi is a small signal FET with N-CHANNEL polarity. It features a built-in diode and resistor, ideal for switching applications. With a max drain current of 0.915A and operating temperature of 150 °C, it offers efficient performance in a compact rectangular package.
.915 A
.23 ohm
NTA7002NT1
NTA7002NT1 by Onsemi is a small signal FET with N-channel polarity. It features a built-in diode and resistor, suitable for switching applications. With a max drain current of 0.154A and operating temperature up to 150 °C, it offers reliable performance in various electronic circuits.
.154 A
7.5 ohm
6 pF
© 2023 All rights reserved
