Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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DMC2450UV-13
Diodes Incorporated
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Minimum DS Breakdown Voltage: 20 V; JESD-609 Code: e3;
ESD PROTECTED
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
1.03 A
.7 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-F6
e3
1
2
6
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL AND P-CHANNEL
1 W
YES
MATTE TIN
FLAT
DUAL
SWITCHING
SILICON
2SK2963(TE12L,F)
Toshiba
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 1 A;
SINGLE
1 A
N-CHANNEL
1.5 W
FET General Purpose Power
DMP510DL-13
DMP510DL-13 by Diodes Inc. is a P-channel FET with 50V DS breakdown voltage and 0.18A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package style. Operating in enhancement mode, this MOSFET has 10 ohm max on-resistance and matte tin terminal finish.
HIGH RELIABILITY
SINGLE WITH BUILT-IN DIODE
50 V
.18 A
10 ohm
R-PDSO-G3
3
P-CHANNEL
AEC-Q101
GULL WING
DMN2230UQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .11 ohm;
2 A
.11 ohm
NSVJ5908DSG5T1G
Onsemi
NSVJ5908DSG5T1G by Onsemi is a N-CHANNEL FET with 2 elements, ideal for amplifier applications. Operating in depletion mode, it has a max power dissipation of 0.3W and can handle a max drain current of 0.05A. This small outline transistor has a temp range of -55 to 150°C and is AEC-Q101 compliant.
LOW NOISE
COMMON SOURCE, 2 ELEMENTS
.05 A
JUNCTION
R-PDSO-F5
e6
5
DEPLETION MODE
.3 W
TIN BISMUTH
30
AMPLIFIER
DMP2170U-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 260; Maximum Drain-Source On Resistance: .09 ohm;
FAST SWITCHING
3.1 A
.09 ohm
37 pF
1.28 W
DMN2008LFU-13
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: NICKEL PALLADIUM GOLD; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e4;
DRAIN
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
14.5 A
.0096 ohm
R-PDSO-N6
e4
NICKEL PALLADIUM GOLD
NO LEAD
DMC1030UFDBQ-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.36 W; Package Shape: SQUARE; Maximum Operating Temperature: 150 Cel;
12 V
5.1 A
.034 ohm
S-PDSO-N6
SQUARE
1.36 W
DMN61D9UW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: HIGH RELIABILITY; Terminal Position: DUAL; Terminal Form: GULL WING;
60 V
.34 A
3.5 ohm
DMN61D9UW-7
Diodes Inc. DMN61D9UW-7 is a N-channel FET with 60V DS breakdown voltage, 0.34A ID, and 3.5Ω RDS(on). Ideal for switching applications in small outline packages, it operates in enhancement mode at -55°C to 260°C peak reflow temp.
AO3406L
Alpha & Omega Semiconductor
AO3406L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS breakdown voltage and 0.065 ohm RDS(on). It's used for switching applications in enhancement mode, featuring a single configuration with built-in diode. The transistor is surface mountable, with GULL WING terminals in a SMALL OUTLINE package.
30 V
.065 ohm
TO-236
NOT SPECIFIED
AO3416L
AO3416L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 20V DS breakdown voltage. It features single configuration with built-in diode, 0.022 ohm RDS(on), and operates in enhancement mode for switching applications. The transistor is surface mountable, has GULL WING terminals, and uses metal-oxide semiconductor technology in a small outline package.
.022 ohm
SSM6N48FU,RF(D
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G6;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
.1 A
5.4 ohm
R-PDSO-G6
2N7002H-13
2N7002H-13 by Diodes Inc. is a small signal N-channel FET with a min DS breakdown voltage of 60V and max drain current of 0.17A. It is commonly used for switching applications due to its single configuration with built-in diode and low drain-source on resistance of 7.5 ohm.
.17 A
7.5 ohm
Matte Tin (Sn)
DMN3021LFDF-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.03 W; Minimum Operating Temperature: -55 Cel; No. of Terminals: 6;
9.3 A
.015 ohm
81 pF
2.03 W
DMN61D9U-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .54 W; Terminal Form: GULL WING; Transistor Element Material: SILICON;
.38 A
2.5 pF
.54 W
DMN61D9U-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .54 W; Minimum DS Breakdown Voltage: 60 V; Transistor Application: SWITCHING;
DMN1150UFL3-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; JESD-30 Code: R-PDSO-N4; Minimum Operating Temperature: -55 Cel;
.15 ohm
23 pF
R-PDSO-N4
4
.9 W
DMN3055LFDB-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.36 W; JESD-609 Code: e4; Maximum Feedback Capacitance (Crss): 44 pF;
5 A
.04 ohm
44 pF
DMN63D1L-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .56 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;
ESD PROTECTED, HIGH RELIABILITY
3 ohm
.56 W
DMN63D1LDW-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .39 W; Peak Reflow Temperature (C): 260; Minimum DS Breakdown Voltage: 60 V;
.25 A
2 ohm
2.9 pF
.39 W
MIL-STD-202
DMG7401SFGQ-13
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
9.8 A
.011 ohm
391 pF
R-PDSO-N5
2.2 W
DMG7401SFGQ-7
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; JESD-30 Code: R-PDSO-N5; Transistor Application: SWITCHING;
DMN3023L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; No. of Elements: 1; JESD-609 Code: e3;
6.2 A
.025 ohm
67 pF
1.3 W
DMP2088LCP3-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; Package Body Material: UNSPECIFIED; Terminal Form: NO LEAD;
1.8 A
.088 ohm
8 pF
R-XBCC-N3
UNSPECIFIED
CHIP CARRIER
1.13 W
BOTTOM
DMN2010UDZ-7
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; No. of Elements: 2; Maximum Operating Temperature: 150 Cel;
24 V
11 A
.007 ohm
311 pF
1.6 W
DMN3016LFDF-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;
10 A
.012 ohm
BVSS138LT3G
BVSS138LT3G by Onsemi is a N-CHANNEL FET with 50V DS breakdown voltage, 0.2A ID, and 3.5 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and built-in diode feature.
.2 A
5 pF
Tin (Sn)
ZXMP6A16DN8QTA
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 8; Reference Standard: AEC-Q101; Maximum Drain Current (ID): 2.9 A;
2.9 A
.085 ohm
R-PDSO-G8
8
NVTJD4001NT2G
NVTJD4001NT2G by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 0.25A Drain Current, and 1.5 ohm Drain-Source Resistance. With a max operating temperature of 150 °C, it is ideal for small outline packages in automotive electronics (AEC-Q101).
1.5 ohm
12 pF
.272 W
AO4292E
AO4292E by Alpha & Omega Semiconductor is a N-CHANNEL FET with 100V DS breakdown voltage, 8A ID, and 0.023 ohm RDS(on). It is used for switching applications in enhancement mode, featuring a built-in diode. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.
100 V
8 A
.023 ohm
TIN
DMN31D6UT-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .32 W; Maximum Feedback Capacitance (Crss): 2.2 pF; Maximum Drain Current (ID): .35 A;
.35 A
2.2 pF
.32 W
DMN2400UFB4-7R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .47 W; Terminal Finish: NICKEL PALLADIUM GOLD; Transistor Application: SWITCHING;
.75 A
.55 ohm
4.2 pF
R-PBCC-N3
.47 W
NX138AKSF
Nexperia
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
4.5 ohm
IEC-60134
PMV30UN2VL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
4.2 A
.032 ohm
TO-236AB
PMZ290UNEYL
PMZ290UNEYL by Nexperia is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and 1.2A ID, 0.32 ohm RDS(on), in PLASTIC/EPOXY package suitable for ENHANCEMENT MODE operation.
1.2 A
.32 ohm
DMN1006UCA6-7
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Terminal Position: BOTTOM; Package Shape: RECTANGULAR; JESD-609 Code: e4;
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
R-PBGA-B6
GRID ARRAY
BALL
DMN1053UCP4-7
DMN1053UCP4-7 by Diodes Incorporated is a N-CHANNEL FET with 12V DS breakdown voltage, 4A ID, and 0.053 ohm RDS(on). Ideal for switching applications in enhancement mode, it features a built-in diode and operates in a grid array package style.
4 A
.053 ohm
126 pF
S-PBGA-B4
DMP1005UFDF-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Terminal Finish: NICKEL PALLADIUM GOLD; Case Connection: DRAIN;
12.8 A
.0085 ohm
DMP1009UFDF-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): 30; Package Shape: SQUARE;
.014 ohm
DMP3048LSD-13
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 30 V; Maximum Drain Current (ID): 4.8 A;
4.8 A
.048 ohm
2N7002CKVL
Nexperia 2N7002CKVL is a N-CHANNEL FET with 60V DS breakdown voltage, 0.3A ID, and 1.6 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features GULL WING terminals, PLASTIC/EPOXY package, and operates b/w -55 to 150 °C.
LOGIC LEVEL COMPATIBLE
.3 A
1.6 ohm
7.5 pF
PMV160UPVL
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .21 ohm; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;
.21 ohm
PMV32UP/MIR
PMV32UP/MIR by Nexperia is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 4A ID and 0.036 ohm RDS(ON), in a SMALL OUTLINE package with GULL WING terminals. Operating in ENHANCEMENT MODE, it has a peak reflow temp of 260°C per IEC-60134 standard.
.036 ohm
PMV50UPEVL
PMV50UPEVL by Nexperia is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.2A ID. Ideal for SWITCHING applications, it features 0.066 ohm RDS(on) and operates in ENHANCEMENT MODE. This GULL WING package has METAL-OXIDE SEMICONDUCTOR technology and can withstand peak reflow at 260°C for 30s.
3.2 A
.066 ohm
NX138BKVL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: GULL WING;
.265 A
3.8 ohm
PMV48XP/MIR
PMV48XP/MIR by Nexperia is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 3.5A and 0.055 ohm RDS(ON), in a SMALL OUTLINE package with GULL WING terminals. Operating in ENHANCEMENT MODE, it has METAL-OXIDE SEMICONDUCTOR technology and SILICON element material.
3.5 A
.055 ohm
NX138BKSF
NX138BKSF by Nexperia is a small signal N-channel FET with a min DS breakdown voltage of 60V. It is used for switching applications and features a max drain current of 0.21A and a max drain-source on resistance of 3.5 ohm.
.21 A
AEC-Q101; IEC-60134
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