Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NTJD4401NT1
Onsemi
NTJD4401NT1 by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor for SWITCHING applications. Features include 20V DS Breakdown Voltage, 0.63A Drain Current, and 0.375ohm On Resistance. Its GULL WING terminals and SMALL OUTLINE package make it suitable for surface mount designs.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
20 V
.63 A
.375 ohm
METAL-OXIDE SEMICONDUCTOR
5 pF
R-PDSO-G6
e0
2
6
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
235
N-CHANNEL
.55 W
Not Qualified
FET General Purpose Power
YES
Tin/Lead (Sn/Pb)
GULL WING
DUAL
SWITCHING
SILICON
BSS8402DW-7
Diodes Incorporated
BSS8402DW-7 by Diodes Inc. is a Small Signal FET with N/P-channel types, ideal for switching applications. It features 60V DS breakdown voltage, 7.5Ω max RDS(on), and 0.115A max ID. With a dual-terminal configuration in a small outline package, it utilizes MOSFET technology for efficient performance in enhancement mode operation.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
60 V
.115 A
7.5 ohm
1
N-CHANNEL AND P-CHANNEL
TIN LEAD
DMN2022UFDF-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .05 ohm; Package Style (Meter): SMALL OUTLINE; JESD-609 Code: e4;
HIGH RELIABILITY
DRAIN
SINGLE WITH BUILT-IN DIODE
7.9 A
.05 ohm
S-PDSO-N6
e4
SQUARE
260
AEC-Q101
NICKEL PALLADIUM GOLD
NO LEAD
30
RTQ035P02TR
ROHM
ROHM's RTQ035P02TR is a P-CHANNEL FET with 20V DS breakdown voltage and 3.5A max drain current. Ideal for switching applications, it features a built-in diode, 0.07 ohm RDS(on), and operates in enhancement mode at up to 150°C.
3.5 A
.07 ohm
e1
P-CHANNEL
1.25 W
Other Transistors
TIN SILVER COPPER
10
NTMS4503NR2
NTMS4503NR2 by Onsemi is a N-CHANNEL FET with 28V DS breakdown voltage and 9A max drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 2.5W. Suitable for surface mount with GULL WING terminals, this MOSFET has an operating temperature of up to 150 °C.
28 V
9 A
.008 ohm
R-PDSO-G8
8
2.5 W
Tin/Lead (Sn80Pb20)
NOT SPECIFIED
SI1865DL-T1-GE3
Vishay Intertechnology
SI1865DL-T1-GE3 by Vishay Intertechnology is a P-channel FET with 2 elements and 6 terminals. Operating in enhancement mode, it has a max temp of 150°C and 0.215 ohm RDS(on). Ideal for switching applications, this MOSFET features a small outline package with gull wing terminals.
ESD PROTECTION
COMPLEX
.215 ohm
PURE MATTE TIN
BSS7728N
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Drain-Source On Resistance: 5 ohm;
LOGIC LEVEL COMPATIBLE
.2 A
5 ohm
4.4 pF
R-PDSO-G3
e3
3
-55 Cel
.36 W
TIN
STT4PF20V
STMicroelectronics
STT4PF20V by STMicroelectronics is a P-channel FET designed for switching applications. It features a max drain current of 3 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Its compact surface mount design ensures efficient performance in various electronic circuits.
3 A
.135 ohm
1.6 W
MATTE TIN
NTJD4001NT1
NTJD4001NT1 by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor for SWITCHING applications. Features include 30V DS Breakdown Voltage, 0.25A Drain Current, and 2.5 ohm On Resistance. Operating at up to 150 °C, it has a small outline package style suitable for surface mount assembly.
30 V
.25 A
2.5 ohm
12 pF
.272 W
NTS4001NT1
NTS4001NT1 by Onsemi is a small signal FET with N-channel polarity. It features a built-in diode and resistor, ideal for switching applications. With a min DS breakdown voltage of 30V, it operates in enhancement mode with max drain current of 0.27A and max power dissipation of 0.33W at 150 °C.
SINGLE WITH BUILT-IN DIODE AND RESISTOR
.27 A
2 ohm
.33 W
STS1HNK60
STS1HNK60 by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 600V breakdown voltage and 0.3A max drain current. It comes in a compact rectangular package with gull-wing terminals. This MOSFET operates efficiently at up to 150 °C.
600 V
.3 A
8.5 ohm
2 W
NTHD4401PT1G
NTHD4401PT1G by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. Features include 20V DS breakdown voltage, 2.1A max drain current, and 0.155 ohm max on resistance. Operates in enhancement mode with a max temp of 150 °C.
2.1 A
.155 ohm
50 pF
R-XDSO-C8
UNSPECIFIED
1.1 W
C BEND
NTHD4401PT1
NTHD4401PT1 by Onsemi is a P-CHANNEL FET with 2 elements & built-in diode, ideal for switching applications. Features include: Max Drain Current of 2.1A, Breakdown Voltage of 20V, and Operating Temp up to 150 °C. Its small outline package makes it suitable for surface mount designs.
NTJD2152PT1G
NTJD2152PT1G by Onsemi is a P-CHANNEL FET with 2 elements, diode, and resistor for SWITCHING applications. Features include 8V DS Breakdown Voltage, 0.775A Drain Current, and 0.3 ohm On Resistance. It operates in ENHANCEMENT MODE with a max temp of 150 °C.
8 V
.775 A
.3 ohm
40 pF
NTJD2152PT1
NTJD2152PT1 by Onsemi is a P-CHANNEL FET with 2 elements, diode, and resistor. It has a max drain current of 0.775A and on-resistance of 0.3 ohm. Ideal for switching applications in small outline packages, operating at up to 150 °C.
2N7002T-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Operating Temperature: 150 Cel; Terminal Form: GULL WING;
.15 W
STL20NM20N
STL20NM20N by STMicroelectronics is a N-CHANNEL FET with 200V DS Breakdown Voltage, 20A ID, and 0.105 ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE with 80W power dissipation and -55 to 150°C operating temperature range.
200 V
20 A
.105 ohm
R-PDSO-N8
80 W
STT5PF20V
STT5PF20V by STMicroelectronics is a P-channel FET designed for switching applications. It features a max drain current of 5 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Its compact surface mount design ensures efficient performance in electronic circuits.
3.2 A
5 A
.1 ohm
FDC6000NZ
Fairchild Semiconductor
FDC6000NZ by Fairchild Semiconductor is a N-CHANNEL FET with 2 elements and built-in diode for SWITCHING applications. Features include 20V DS Breakdown Voltage, 6.5A Max Drain Current, and 0.02 ohm Max RDS(ON). Operates in ENHANCEMENT MODE with a max temp of 150°C, suitable for surface mount with small outline package style.
6.5 A
7.3 A
.02 ohm
R-PDSO-F6
FLAT
NTTD4401FR2
NTTD4401FR2 by Onsemi is a P-CHANNEL FET for switching applications. It features a 20V DS breakdown voltage, 2.4A drain current, and 0.09 ohm on-resistance. With a small outline package style and GULL WING terminals, it operates in enhancement mode up to 150 °C.
2.4 A
.09 ohm
175 pF
1.42 W
STC5NF30V
STC5NF30V by STMicroelectronics is an N-channel FET designed for switching applications. It features a max drain current of 5 A, a breakdown voltage of 30 V, and operates in enhancement mode. Ideal for compact designs with its surface mount configuration.
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
.035 ohm
1.5 W
NTHD4N02FT1G
NTHD4N02FT1G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 2.7A Drain Current, and 0.08ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in diode. Operates at up to 125 °C with a peak reflow temperature of 260°C in small outline package style.
2.7 A
2.9 A
.08 ohm
125 Cel
.91 W
STS10PF30L
STS10PF30L by STMicroelectronics is a P-channel FET designed for switching applications. It features a max drain current of 10 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Its compact SO package ensures efficient surface mounting in electronic circuits.
10 A
.01 A
.018 ohm
BSO064N03S
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Style (Meter): SMALL OUTLINE; JEDEC-95 Code: MS-012AA;
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
12 A
.0064 ohm
180 pF
MS-012AA
BSO072N03S
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 12 A;
.0068 ohm
160 pF
BSO094N03S
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Peak Reflow Temperature (C): 260;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
13 A
.0091 ohm
120 pF
BSO119N03S
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.56 W; JESD-30 Code: R-PDSO-G8; Package Shape: RECTANGULAR;
.0119 ohm
93 pF
1.56 W
BSO150N03
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Terminal Position: DUAL; JEDEC-95 Code: MS-012AA;
7.6 A
.015 ohm
100 pF
1.4 W
BSO200N03S
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.56 W; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; JESD-609 Code: e3;
7 A
46 pF
BSO300N03S
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.56 W; Moisture Sensitivity Level (MSL): 3; JEDEC-95 Code: MS-012AA;
5.7 A
.03 ohm
34 pF
SPN02N60C3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Terminal Finish: MATTE TIN; Minimum DS Breakdown Voltage: 600 V;
.4 A
R-PDSO-G4
4
1.8 W
NTLJD3182FZTAG
NTLJD3182FZTAG by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage and 2.2A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package style. Operating in enhancement mode, this MOSFET has 0.144 ohm max on-resistance and matte tin terminal finish.
2.2 A
.144 ohm
NTLUF4189NZTAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Case Connection: DRAIN; Maximum Operating Temperature: 150 Cel;
1.5 A
1.2 A
.2 ohm
1.3 W
NTLUF4189NZTBG
NTLUF4189NZTBG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 1.2A ID. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package style. Operating in ENHANCEMENT MODE, this MOSFET has 0.2 ohm RDS(ON) for efficient performance.
NTLUS3192PZTAG
NTLUS3192PZTAG by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 2.2A ID. Ideal for SWITCHING applications, it features 0.085 ohm RDS(ON) and ENHANCEMENT MODE operation in a SMALL OUTLINE package.
.085 ohm
S-PDSO-N3
NTTFS4824NTAG
NTTFS4824NTAG by Onsemi is a N-channel FET with 30V DS breakdown voltage and 69A max drain current. Ideal for switching applications, it features a built-in diode, 0.0075 ohm max on resistance, and operates in enhancement mode. Suitable for surface mount assembly with a max power dissipation of 46.3W at 150°C.
69 A
8.3 A
.0075 ohm
255 pF
S-PDSO-F5
5
46.3 W
FET General Purpose Powers
NTTFS4824NTWG
NTTFS4824NTWG by Onsemi is a N-channel FET with 30V DS breakdown voltage and 69A max drain current. Ideal for switching applications, it features a built-in diode, 0.0075 ohm max on resistance, and operates in enhancement mode. Suitable for surface mount assembly with a small outline package style.
NTLJD3181PZTAG
NTLJD3181PZTAG by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a 20V DS Breakdown Voltage, 3.2A ID, and 0.1 ohm RDS(on). This METAL-OXIDE SEMICONDUCTOR FET comes in a SQUARE package with NO LEAD terminals, suitable for ENHANCEMENT MODE operation in various electronic circuits.
NTLUD3191PZTBG
NTLUD3191PZTBG by Onsemi is a P-CHANNEL FET with 2 elements & built-in diode, ideal for SWITCHING applications. It features a Min DS Breakdown Voltage of 20V, Max Drain Current of 1.1A, and Drain-Source On Resistance of 0.25 ohm. This small outline transistor in PLASTIC/EPOXY package is designed for surface mount with DUAL terminals.
1.1 A
.25 ohm
RTR025P02TL
ROHM RTR025P02TL is a P-CHANNEL FET with 20V DS Breakdown Voltage, 2.5A ID, and 0.105 ohm RDS(on). Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating at up to 150°C, it's suitable for ENHANCEMENT MODE operations requiring high drain current capabilities.
2.5 A
1 W
RTR020P02TL
ROHM RTR020P02TL is a P-CHANNEL FET with 20V DS Breakdown Voltage, 2A Drain Current, and 0.15 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating at up to 150°C, it features ENHANCEMENT MODE technology for efficient performance.
2 A
.15 ohm
BSO052N03S
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
14 A
.0052 ohm
280 pF
BSO104N03S
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.56 W; Maximum Drain Current (ID): 10 A; Operating Mode: ENHANCEMENT MODE;
.0097 ohm
110 pF
BSO350N03
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Maximum Drain-Source On Resistance: .035 ohm; JESD-30 Code: R-PDSO-G8;
28 pF
MMBF170LT3G
MMBF170LT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.5A Drain Current, and 5 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. This PLASTIC/EPOXY package features GULL WING terminals and a built-in DIODE.
.5 A
TO-236AB
.225 W
Tin (Sn)
40
NTJD4105CT2
NTJD4105CT2 by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode & resistor. Ideal for switching applications, it has a max drain current of 1.1A, on-resistance of 0.375 ohm & operates at up to 150°C. With a package style of small outline & Gull Wing terminals, it's designed for surface mount technology.
NTJD4105CT4G
NTJD4105CT4G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 1.1A max drain current, 0.375 ohm RDS(on), and 150°C max temp making it ideal for various electronic circuits.
NTMS4404NR2
NTMS4404NR2 by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage and 9.6A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a low on-resistance of 0.0115 ohm. This small outline transistor can handle up to 2.5W power dissipation at 150 °C max temperature.
9.6 A
.0115 ohm
300 pF
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