Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
ADG467BR-REEL7
Analog Devices
ADG467BR-REEL7 by Analog Devices is a N-CHANNEL FET for SWITCHING applications. It has 18 terminals, operates in ENHANCEMENT MODE, with max ID of 0.02A and RDS(on) of 95 ohm. The package is RECTANGULAR, surface mountable, with MSL level 3 and max temp of 150°C.
.02 A
95 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-G18
e0
3
18
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
240
N-CHANNEL
Not Qualified
YES
TIN LEAD
GULL WING
DUAL
SWITCHING
SILICON
ADG467BRS-REEL
ADG467BRS-REEL by Analog Devices is a N-CHANNEL FET for SWITCHING applications. It has 20 terminals, operates in ENHANCEMENT MODE, with max ID of 0.02A and RDS(on) of 95Ω. The package is RECTANGULAR, surface mountable, with GULL WING terminals made of SILICON material.
R-PDSO-G20
1
20
DMN2014LHAB-7
Diodes Incorporated
DMN2014LHAB-7 by Diodes Inc. is a N-channel FET with 2 elements and built-in diode for switching applications. It operates in enhancement mode, has a max drain current of 9A, and low on-resistance of 0.013 ohm. With AEC-Q101 standard compliance, it's ideal for automotive electronics requiring high power dissipation up to 1.7W at temperatures ranging from -55 to 150°C.
HIGH RELIABILITY
DRAIN
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
9 A
.013 ohm
145 pF
R-PDSO-N4
e4
2
4
-55 Cel
260
1.7 W
AEC-Q101
NICKEL PALLADIUM GOLD
NO LEAD
30
CPH3462-TL-W
Onsemi
CPH3462-TL-W by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 1A max drain current, and 0.785 ohm RDS(on). Ideal for small outline applications requiring high power dissipation up to 1W at 150°C. Suitable for surface mount designs due to its gull wing terminals and built-in diode configuration.
SINGLE WITH BUILT-IN DIODE
100 V
1 A
.785 ohm
TO-236
R-PDSO-G3
e6
1 W
FET General Purpose Power
TIN BISMUTH
TSM126CXRFG
Taiwan Semiconductor
TSM126CXRFG by Taiwan Semiconductor is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features a built-in diode, 800 ohm max RDS(on), and 0.03A max ID. This SMALL OUTLINE transistor operates in DEPLETION MODE and has GULL WING terminals for surface mount assembly.
600 V
.03 A
800 ohm
DEPLETION MODE
FDR6580
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Terminal Position: DUAL; Operating Mode: ENHANCEMENT MODE;
11 A
11.2 A
.009 ohm
R-PDSO-G8
e3
8
1.8 W
MATTE TIN
FDR8521L
FDR8521L by Fairchild Semiconductor is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in Enhancement Mode for switching applications, with max ID of 2.9A and RDS(on) of 0.07 ohm. This rectangular package has Gull Wing terminals and is surface mountable.
2.9 A
.07 ohm
N-CHANNEL AND P-CHANNEL
FDR6674A
FDR6674A by Fairchild Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 11.5A Drain Current, 0.008 ohm On Resistance, and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has a max power dissipation of 1.8W and can withstand temperatures up to 150°C.
30 V
11.5 A
.008 ohm
PCP1402-TD-H
PCP1402-TD-H by Onsemi is a N-CHANNEL FET with 1.2A max drain current and 3.5W power dissipation. Ideal for applications requiring high temperature tolerance up to 150 °C, such as in surface mount configurations for compact electronic devices.
SINGLE
1.2 A
3.5 W
FDC5614PD87Z
FDC5614PD87Z by Fairchild Semiconductor is a P-CHANNEL FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max drain current of 3A. The transistor operates in enhancement mode and has a max power dissipation of 1.6W at a max operating temperature of 150°C.
60 V
3 A
.1 ohm
R-PDSO-G6
6
P-CHANNEL
1.6 W
Other Transistors
FDV304PD87Z
Fairchild Semiconductor's FDV304PD87Z is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.46A ID, and 1.1 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. The SMALL OUTLINE package features GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.
25 V
.46 A
1.1 ohm
.35 W
NTMFS4943NT1G
NTMFS4943NT1G by Onsemi is an N-CHANNEL FET with a 30V DS Breakdown Voltage and 125A IDM. Ideal for SWITCHING applications, it features a 0.011 ohm Drain-Source On Resistance and operates up to 150 °C.
31 mJ
8.3 A
.011 ohm
R-XDSO-F5
5
UNSPECIFIED
NOT SPECIFIED
125 A
Tin (Sn)
FLAT
STS4DPFS30L
STMicroelectronics
STS4DPFS30L by STMicroelectronics is a P-CHANNEL FET with 30V DS Breakdown Voltage and 4A Drain Current. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation, GULL WING terminals, and a max operating temperature of 150 °C.
4 A
.095 ohm
NTGS3443T1
NTGS3443T1 by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 2.2A Drain Current, and 0.065 ohm On Resistance. With a small outline package style and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 150 °C.
2.2 A
.065 ohm
235
.5 W
Tin/Lead (Sn80Pb20)
NTGS3441T1
NTGS3441T1 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 1.65A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR PLASTIC package. Operating in ENHANCEMENT MODE, it has 0.09 ohm On Resistance and can handle up to 0.5W Power Dissipation at 150 °C.
1.65 A
.09 ohm
NTGS3446T1
NTGS3446T1 by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage and 5.8A Drain Current, ideal for SWITCHING applications. It features a SINGLE configuration with BUILT-IN DIODE, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max power dissipation of 1.6W and operating temperature up to 150 °C, it offers reliable performance in various electronic circuits.
LOGIC LEVEL COMPATIBLE
5.8 A
2.5 A
.045 ohm
100 pF
NTMS10P02R2
NTMS10P02R2 by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 4.5A Drain Current, and 0.014 ohm On Resistance. With a max operating temperature of 150 °C, this MOSFET is ideal for high-power switching circuits in various electronic devices.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
4.5 A
8.8 A
.014 ohm
1010 pF
.4 W
DMN1032UCB4-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: S-PBGA-B4;
12 V
.038 ohm
47 pF
S-PBGA-B4
e1
SQUARE
GRID ARRAY
TIN SILVER COPPER
BALL
BOTTOM
CPH3461-TL-H
CPH3461-TL-H by Onsemi is a N-CHANNEL FET with 250V DS breakdown voltage, 0.35A drain current, and 7.2 ohm on resistance. It is used for switching applications in enhancement mode with built-in diode, operating at up to 150 °C. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.
250 V
.35 A
7.2 ohm
DMN53D0U-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Matte Tin (Sn);
50 V
.3 A
3 ohm
Matte Tin (Sn)
STN3PF06
STN3PF06 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, 2.5A Drain Current, and 0.22 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with ENHANCEMENT MODE operation up to 150 °C.
AVALANCHE ENERGY RATED
.22 ohm
R-PDSO-G4
2.5 W
NDDP010N25AZT4H
NDDP010N25AZT4H by Onsemi is a N-CHANNEL FET with 250V DS Breakdown Voltage, 10A Drain Current, and 0.42 ohm On Resistance. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package suitable for surface mount technology.
10 A
.42 ohm
TO-252
R-PSSO-G2
52 W
PCP1302-TD-H
PCP1302-TD-H by Onsemi is a P-CHANNEL FET with 60V DS breakdown voltage, 3A ID, and 0.266 ohm RDS. It's used in enhancement mode applications with a max power dissipation of 3.5W at 150°C, featuring a small outline package style for surface mount assembly.
.266 ohm
TO-243AA
R-PSSO-F3
DMP57D5UV-7
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Drain-Source On Resistance: 6 ohm; Terminal Position: DUAL;
.16 A
6 ohm
R-PDSO-F6
NTGS1135PT1G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Moisture Sensitivity Level (MSL): 1; Transistor Application: SWITCHING;
ULTRA LOW RESISTANCE
8 V
4.6 A
.031 ohm
NTUD3171PZT5G
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (Abs) (ID): .2 A;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
.2 A
5 ohm
.2 W
TIN
NTZD3156CT1G
NTZD3156CT1G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode & resistor. It operates in enhancement mode for switching applications. Features include 20V breakdown voltage, 0.54A drain current, 0.55 ohm on-resistance, and 150 °C max temp.
.54 A
.55 ohm
.28 W
NTZD3156CT2G
NTZD3156CT2G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode & resistor. Ideal for switching applications, it has a max drain current of 0.54A, on-resistance of 0.55 ohm, and operates at up to 150 °C. Suitable for surface mount with 6 terminals in a small outline package.
NTZD3156CT5G
NTZD3156CT5G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode, and resistor. It operates in enhancement mode for switching applications with max drain current of 0.54A and on-resistance of 0.55Ω. This MOSFET has a breakdown voltage of 20V and can handle up to 150 °C operating temperature.
2N7002-E3
Vishay Intertechnology
2N7002-E3 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for small outline applications requiring high power dissipation up to 0.2W in enhancement mode operation at temperatures up to 150°C.
.115 A
7.5 ohm
5 pF
DMN26D0UFB4-7
DMN26D0UFB4-7 by Diodes Inc. is a N-channel FET with 20V DS breakdown voltage and 0.24A max drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.35W. This chip carrier package features a silicon transistor element and can withstand temperatures up to 150°C.
ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
.23 A
.24 A
R-PBCC-N3
CHIP CARRIER
NTJD4001NT2G
NTJD4001NT2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.25A ID, and 2.5 ohm RDS(on). It is used for SWITCHING applications in small outline packages with GULL WING terminals.
.25 A
2.5 ohm
12 pF
.272 W
BSO200N03
Infineon Technologies
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Terminal Finish: MATTE TIN;
AVALANCHE RATED
6.6 A
.02 ohm
56 pF
MS-012
2 W
NTK3142PT5G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Drain-Source On Resistance: 4 ohm; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): 30;
SINGLE WITH BUILT-IN DIODE AND RESISTOR
.215 A
4 ohm
R-PDSO-F3
NTGD3133PT1G
NTGD3133PT1G by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Max Drain Current of 2.5A, Max Power Dissipation of 1.3W, and Max Operating Temperature of 150 °C. This small outline transistor has a rectangular package and GULL WING terminals for surface mount assembly.
1.6 A
.145 ohm
1.3 W
40
DMN5L06DMK-7
DMN5L06DMK-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage and 0.305A max drain current, ideal for switching applications. It features separate configuration with built-in diode, small outline package style, and operates in enhancement mode at up to 150°C.
.305 A
DMN5L06DWK-7
DMN5L06DWK-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage and 0.305A max drain current, suitable for switching applications. It features a separate configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. This small outline transistor has a max power dissipation of 0.25W and can withstand temperatures up to 150°C.
.25 W
DMN5L06WK-7
DMN5L06WK-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, 0.3A drain current, and 3ohm on-resistance. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount technology. Operating in enhancement mode at up to 150°C, it meets AEC-Q101 standards for automotive use.
HIGH RELIABILITY, FAST SWITCHING
FET General Purpose Powers
DMN2112SN-7
DMN2112SN-7 by Diodes Inc. is a N-channel FET with 20V DS breakdown voltage and 1.2A max drain current, ideal for switching applications. It operates in enhancement mode, with 0.5W max power dissipation and -55 to 150°C operating temperature range. The package style is small outline, making it suitable for surface mount designs.
45 pF
MIL-STD-202
DMN2114SN-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
.16 ohm
NMSD200B01-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): 30;
2 ohm
DMN5L06K-7
DMN5L06K-7 by Diodes Inc. is a N-channel FET for switching applications. It has a 50V DS breakdown voltage, 0.3A max drain current, and 3 ohm max on-resistance. With a small outline package style, it operates b/w -65 to 150 °C and meets MIL-STD-202 standards.
-65 Cel
LMN200B01-7
LMN200B01-7 by Diodes Inc. is a small signal N-channel FET with built-in bipolar transistor and resistor, used for switching applications. It has a max VCEsat of 0.3V, min DS breakdown voltage of 60V, and max operating temperature of 150°C.
BUILT IN BIAS RESISTOR
SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR
60
.3 W
.3 V
LMN400B01-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .4 A; JESD-30 Code: R-PDSO-G6;
.4 A
70
NTMS4935NR2G
NTMS4935NR2G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 10A ID, and 0.0051 ohm RDS(on). Ideal for switching applications in small outline packages with GULL WING terminals. Operating at max temp of 150 °C, it features built-in diode and METAL-OXIDE SEMICONDUCTOR technology.
.0051 ohm
BSS209PWL6327
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .52 W; No. of Elements: 1; Package Shape: RECTANGULAR;
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
.58 A
.52 W
BSV236SPL6327
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .56 W; Qualification: Not Qualified; Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED;
1.5 A
.175 ohm
.56 W
BSD223PL6327
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Maximum Feedback Capacitance (Crss): 22 pF;
.39 A
1.2 ohm
22 pF
© 2023 All rights reserved
