Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NDS7002A/D87Z
National Semiconductor
NDS7002A/D87Z by National Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3W Power Dissipation, and 150°C Max Operating Temp. Ideal for SWITCHING applications due to SINGLE configuration with BUILT-IN DIODE. Features GULL WING terminals in PLASTIC/EPOXY package style.
SINGLE WITH BUILT-IN DIODE
60 V
.28 A
2 ohm
METAL-OXIDE SEMICONDUCTOR
5 pF
TO-236AB
R-PDSO-G3
1
3
ENHANCEMENT MODE
150 Cel
-65 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
.3 W
Not Qualified
YES
GULL WING
DUAL
SWITCHING
SILICON
2SJ600-Z-E1-AZ
Renesas Electronics
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
SINGLE
25 A
NOT SPECIFIED
P-CHANNEL
45 W
Other Transistors
2SJ601(0)-Z-E1-AZ
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; Maximum Drain Current (Abs) (ID): 36 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
DRAIN
36 A
.046 ohm
TO-252
R-PSSO-G2
2
65 W
2SK3386(0)-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Maximum Drain Current (Abs) (ID): 34 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
34 A
40 W
FET General Purpose Power
2SK3402(0)-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED;
UPA1911ATE-T1-A
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Form: GULL WING; JESD-609 Code: e6;
20 V
2.5 A
.12 ohm
R-PDSO-G6
e6
6
2 W
TIN BISMUTH
UPA1917TE-T1-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 6 A;
6 A
UPA1919TE-T1-AT
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; No. of Terminals: 6; Transistor Element Material: SILICON;
.084 ohm
UPA1952TE-T1-A
P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.15 W; Maximum Drain Current (ID): 2 A; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6;
2 A
1.15 W
UPA677TB-T1-A
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (Abs) (ID): .35 A; Terminal Finish: TIN BISMUTH; Maximum Drain Current (ID): .35 A;
.35 A
.2 W
UPA679TB-T1-A
N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; JESD-609 Code: e6; Maximum Operating Temperature: 150 Cel; Terminal Finish: TIN BISMUTH;
N-CHANNEL AND P-CHANNEL
NTMFD4C20NT3G
Onsemi
NTMFD4C20NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 9.1A ID, and 0.0108 ohm RDS(on). Ideal for SWITCHING applications, it features SERIES CONNECTED configuration in a SMALL OUTLINE package with METAL-OXIDE SEMICONDUCTOR technology.
DRAIN SOURCE
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
30 V
9.1 A
.0108 ohm
125 pF
R-PDSO-F8
e3
8
-55 Cel
260
1.88 W
TIN
FLAT
30
6HP04MH-TL-W
6HP04MH-TL-W by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage. It features SINGLE configuration with built-in diode and resistor, suitable for surface mount applications. With 0.37A ID and 4.2Ω RDS(on), it's ideal for small outline packages in enhancement mode circuits.
SINGLE WITH BUILT-IN DIODE AND RESISTOR
.37 A
4.2 ohm
4.1 pF
R-PDSO-F3
.6 W
DMG6301UDW-7
Diodes Incorporated
DMG6301UDW-7 by Diodes Inc. is a N-channel FET with 2 elements and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 25V, max drain current of 0.24A, and operating temperature range from -55 to 150°C. This small outline transistor in gull wing package is designed for enhancement mode operation in surface mount configurations.
HIGH RELIABILITY
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
25 V
.24 A
4 ohm
.37 W
AEC-Q101
MATTE TIN
DMN30H14DLY-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON; JESD-30 Code: R-PSSO-F3;
300 V
.21 A
14 ohm
R-PSSO-F3
DMP1022UFDF-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Additional Features: HIGH RELIABILITY; Package Shape: SQUARE;
12 V
9.5 A
.026 ohm
467 pF
S-PDSO-N6
e4
SQUARE
2.1 W
NICKEL PALLADIUM GOLD
NO LEAD
NTMFS4847NAT1G
NTMFS4847NAT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 11.5A ID, and 0.0062 ohm RDS(ON). It's used for SWITCHING applications in ENHANCEMENT MODE with built-in DIODE, suitable for surface mount technology.
11.5 A
.0062 ohm
R-PDSO-F5
5
2SJ598(0)-Z-E1-AZ
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 23 W; JEDEC-95 Code: TO-252; Case Connection: DRAIN;
12 A
.19 ohm
50 pF
1 W
23 W
2SJ621-T1B-AT
2SJ621-T1B-AT by Renesas Electronics is a P-CHANNEL FET with 3.5A ID, 0.062 ohm RDS(on), and 12V DS breakdown voltage. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max temp of 150°C.
3.5 A
.062 ohm
1.25 W
2SJ624-T1B-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;
4.5 A
2SJ648-T1-A
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e6;
.4 A
2SK3385(0)-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 36 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
30 A
36 W
2SK3408-T1B-AT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 43 V;
43 V
1 A
.26 ohm
30 pF
2SK3483(0)-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (ID): 28 A;
28 A
2SK3484(0)-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 16 A;
16 A
30 W
PCP1405-TD-H
The Onsemi PCP1405-TD-H is a N-CHANNEL FET with 0.6A max drain current and 3.5W max power dissipation. Ideal for surface mount applications, it operates up to 150 °C making it suitable for various electronic devices requiring high temperature tolerance.
.6 A
3.5 W
NDS331ND87Z
Fairchild Semiconductor
NDS331ND87Z by Fairchild Semiconductor is a N-CHANNEL FET with 20V DS Breakdown Voltage, 1.3A ID, and 0.16 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with GULL WING terminals.
1.3 A
.16 ohm
ADG467BR
Analog Devices
ADG467BR by Analog Devices is a N-CHANNEL FET for SWITCHING applications. It features 18 terminals, operates in ENHANCEMENT MODE, with max ID of 0.02A and RDS(on) of 95Ω. The PLASTIC/EPOXY package has GULL WING terminals and can withstand up to 150°C, making it suitable for various electronic devices.
.02 A
95 ohm
R-PDSO-G18
e0
18
240
TIN LEAD
ADG467BRS
ADG467BRS by Analog Devices is a N-CHANNEL FET for SWITCHING applications. It features 20 terminals in a SMALL OUTLINE package with ENHANCEMENT MODE operation. With a max operating temperature of 150°C and 95 ohm on-resistance, it is ideal for high-performance electronic devices.
R-PDSO-G20
20
RK7002T116
ROHM
ROHM RK7002T116 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.115A max drain current. Ideal for switching applications, it features a built-in diode, GULL WING terminals, and operates in enhancement mode. The transistor has a max power dissipation of 0.225W and can withstand temperatures up to 150°C.
.115 A
7.5 ohm
e1
.225 W
TIN SILVER COPPER
FDV302PD87Z
Fairchild Semiconductor's FDV302PD87Z is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.12A ID, and 10 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.
LOGIC LEVEL COMPATIBLE
.12 A
10 ohm
.35 W
ZVN3320FTC
Zetex Plc
Zetex Plc's ZVN3320FTC is a N-CHANNEL FET with 200V DS Breakdown Voltage, 0.06A ID, and 25 ohm RDS(on). Ideal for small outline applications requiring high temp operation up to 150°C. Suitable for enhancing circuit performance in various electronic devices.
200 V
.06 A
25 ohm
ZVP3310FTC
ZVP3310FTC by Zetex Plc is a P-CHANNEL FET with 100V DS Breakdown Voltage, 20 ohm Drain-Source Resistance, and 150°C Operating Temp. Ideal for small signal applications in electronics due to its ENHANCEMENT MODE operation and compact SMALL OUTLINE package style.
100 V
.075 A
20 ohm
40
BSS123TC
BSS123TC by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. It features 100V DS Breakdown Voltage, 0.17A ID, and 6 ohm RDS(ON). With ENHANCEMENT MODE operation and METAL-OXIDE SEMICONDUCTOR tech, it's ideal for small outline surface mount designs.
.17 A
6 ohm
4 pF
TPIC1502DW
Texas Instruments
TPIC1502DW by Texas Instruments is a N-CHANNEL FET with 1.5A max drain current, 0.3 ohm max on resistance, and 11 elements. It is used as an amplifier in various applications due to its small outline package style and dual terminal position.
COMPLEX
1.5 A
.005 A
.3 ohm
R-PDSO-G24
11
24
AMPLIFIER
FDV301ND87Z
FDV301ND87Z by Fairchild Semiconductor is a N-CHANNEL FET with 25V DS Breakdown Voltage. It is used for SWITCHING applications in ENHANCEMENT MODE, featuring 0.22A ID and 4 ohm RDS(on). The transistor operates at up to 150°C, making it suitable for various electronic devices.
.22 A
NTMD5836NLR2G
NTMD5836NLR2G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 9A Drain Current, and 0.0308 ohm On Resistance. It is used in applications requiring high power dissipation up to 1.5W, operating at temperatures up to 150 °C. Ideal for surface mount designs due to its GULL WING terminals and SMALL OUTLINE package style.
40 V
9 A
5.7 A
.0308 ohm
R-PDSO-G8
1.5 W
NTMFS4825NFET1G
NTMFS4825NFET1G by Onsemi is a N-channel FET with 30V DS breakdown voltage, 17A max drain current, and 0.002 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode. Features small outline package style and operates in enhancement mode up to 150 °C.
17 A
.002 ohm
2N7002LT1H
2N7002LT1H by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 7.5 ohm RDS(ON). It operates in Enhancement Mode, suitable for small outline applications like power management circuits due to its 115mA ID and built-in diode.
TO-236
SI2392ADS-T1-GE3
Vishay Intertechnology
SI2392ADS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 100V DS breakdown voltage and 3.1A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.126 ohm max on-resistance. The small outline package features gull wing terminals and can withstand temperatures from -55 to 150°C.
3.1 A
.126 ohm
14 pF
2.5 W
Matte Tin (Sn)
6HP04CH-TL-W
6HP04CH-TL-W by Onsemi is a P-CHANNEL FET with 0.37A max drain current and 0.6W power dissipation. Ideal for applications requiring surface mount technology, it operates at up to 150 °C and features TIN BISMUTH terminal finish.
FDG6322CD87Z
FDG6322CD87Z by Fairchild Semiconductor is a Small Signal FET with N-CHANNEL and P-CHANNEL polarity. It features 2 elements with built-in diode for switching applications. With a max drain current of 0.41A, it operates in enhancement mode at up to 150°C temperature.
.41 A
CPH3459-TL-W
CPH3459-TL-W by Onsemi is a N-CHANNEL FET with 0.5A max drain current and 1W max power dissipation. Ideal for surface mount applications, it operates up to 150°C and features metal-oxide semiconductor technology. Suitable for various electronic devices requiring efficient power management in compact designs.
.5 A
FDG6301ND87Z
FDG6301ND87Z by Fairchild Semiconductor is a N-CHANNEL FET for SWITCHING applications. It features 25V DS Breakdown Voltage, 0.3W Power Dissipation, and 150°C Max Operating Temp. With GULL WING terminals in a SMALL OUTLINE package, it offers 0.22A Drain Current and 4Ω On Resistance.
FDG6303ND87Z
FDG6303ND87Z by Fairchild Semiconductor is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a min DS Breakdown Voltage of 25V, Max Power Dissipation of 0.3W, and Max Operating Temperature of 150°C. This small outline transistor has GULL WING terminals and operates in ENHANCEMENT MODE.
.45 ohm
CPH3362-TL-W
CPH3362-TL-W by Onsemi is a P-CHANNEL FET with 100V DS breakdown voltage and 0.7A max drain current. Ideal for small signal applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1W. Suitable for surface mount designs in various electronic circuits.
.7 A
1.7 ohm
7.3 pF
DMG3418L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Transistor Application: SWITCHING; Terminal Finish: MATTE TIN;
4 A
.06 ohm
UM5K1NTR
ROHM UM5K1NTR is a N-CHANNEL FET with 2 elements & built-in diode for switching applications. Features include 30V DS breakdown voltage, 0.1A max drain current, and 8 ohm max on resistance. Ideal for common source configuration in small outline packages at up to 150°C operating temp.
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
.1 A
8 ohm
R-PDSO-G5
e2
.15 W
TIN COPPER
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