Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BSS223PWL6327
Infineon Technologies
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Minimum DS Breakdown Voltage: 20 V; Maximum Drain-Source On Resistance: 1.2 ohm;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
SINGLE WITH BUILT-IN DIODE
20 V
.39 A
1.2 ohm
METAL-OXIDE SEMICONDUCTOR
22 pF
R-PDSO-G3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
P-CHANNEL
.25 W
Not Qualified
Other Transistors
YES
MATTE TIN
GULL WING
DUAL
SILICON
NTTFS4932NTWG
Onsemi
NTTFS4932NTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 79A Drain Current, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE, 0.0055 ohm On Resistance, and operates in ENHANCEMENT MODE. This MOSFET has a max power dissipation of 43W and can withstand temperatures up to 150 °C.
DRAIN
30 V
79 A
11 A
.0055 ohm
S-XDSO-N5
5
UNSPECIFIED
SQUARE
NOT SPECIFIED
N-CHANNEL
43 W
FET General Purpose Power
Tin (Sn)
NO LEAD
SWITCHING
NTTFS4937NTAG
NTTFS4937NTAG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 75A ID, and 0.007 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. This SQUARE package with NO LEAD terminals features a BUILT-IN DIODE and DUAL terminal position.
75 A
.007 ohm
43.1 W
Matte Tin (Sn) - annealed
NTTFS4937NTWG
NTTFS4937NTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 75A Drain Current, and 0.007 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. This SQUARE package features a BUILT-IN DIODE and NO LEAD terminals for surface mount assembly.
NTTFS4939NTWG
NTTFS4939NTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 52A Drain Current, and 0.008 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 29.8W. This surface mount transistor has a SQUARE package shape and operates at up to 150 °C temperature.
52 A
8.9 A
.008 ohm
29.8 W
NTTFS4943NTWG
NTTFS4943NTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 8A ID, and 0.011 ohm RDS(ON). It is used for SWITCHING applications in ENHANCEMENT MODE. This SMALL OUTLINE transistor features METAL-OXIDE SEMICONDUCTOR tech and SILICON material.
8 A
.011 ohm
NTTFS4945NTWG
NTTFS4945NTWG by Onsemi is a N-CHANNEL FET with built-in diode for switching applications. It features a 30V DS breakdown voltage, 7.1A max drain current, and 0.013 ohm max on resistance. This MOSFET has a square package shape, no lead terminals, and operates in enhancement mode.
7.1 A
.013 ohm
SSM3K121TU
Toshiba
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;
3.2 A
.14 ohm
R-PDSO-F3
.8 W
FLAT
NTUD3127CT5G
NTUD3127CT5G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode/resistor. Ideal for switching applications, it has 20V DS breakdown voltage, 0.16A max drain current, and 3 ohm max on-resistance. Operating at up to 150 °C, it features METAL-OXIDE SEMICONDUCTOR tech in a small outline package.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
.16 A
3 ohm
2.2 pF
R-PDSO-F6
2
6
N-CHANNEL AND P-CHANNEL
NICKEL GOLD PALLADIUM
30
NTUD3128NT5G
NTUD3128NT5G by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Min DS Breakdown Voltage of 20V, Max Drain Current of 0.16A, and Max Power Dissipation of 0.2W. This small outline transistor operates in enhancement mode at temperatures up to 150 °C.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
.2 W
NTHD4102PT3G
NTHD4102PT3G by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 20V, max ID of 2.9A, and RDS(on) of 0.08 ohm. This small outline transistor operates in enhancement mode with a peak reflow temperature of 260 °C.
LOGIC LEVEL COMPATIBLE
2.9 A
.08 ohm
R-XDSO-C8
8
TIN
C BEND
NTJD4158CT2G
NTJD4158CT2G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode & resistor. It's used for switching applications in enhancement mode. Features include 30V breakdown voltage, 0.27W power dissipation, and -55 to 150 °C operating temperature range.
.25 A
2.5 ohm
12 pF
R-PDSO-G6
-55 Cel
.27 W
DMN32D2LV-7
Diodes Incorporated
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.4 A
.4 W
FDC6000NZ_F077
Fairchild Semiconductor
Fairchild Semiconductor's FDC6000NZ_F077 is a N-CHANNEL FET with 20V DS Breakdown Voltage, 7.3A ID, and 0.02 ohm RDS(on). Ideal for SWITCHING applications, it features a PLASTIC/EPOXY package, ENHANCEMENT MODE operation, and dual elements with built-in diode.
7.3 A
.02 ohm
e4
1.8 W
Nickel/Palladium/Gold (Ni/Pd/Au)
IRFM210BTF_FP001
Fairchild Semiconductor's IRFM210BTF_FP001 is a N-CHANNEL FET with 200V DS breakdown voltage, ideal for SWITCHING applications. It features 0.77A max drain current, 1.5 ohm max on resistance, and operates in ENHANCEMENT MODE. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals and can handle up to 2W power dissipation at 150°C.
200 V
.77 A
1.5 ohm
9 pF
R-PDSO-G4
4
2 W
NTLJS4149PTAG
NTLJS4149PTAG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 4.5A Drain Current, ideal for SWITCHING applications. It features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package, operating in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C.
4.5 A
2.7 A
.062 ohm
S-PDSO-N6
3.2 W
NTLJS4149PTBG
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.2 W; Minimum Operating Temperature: -55 Cel; No. of Terminals: 6;
2N7002K,215
NXP Semiconductors
2N7002K,215 by NXP Semiconductors is a small signal FET with N-channel polarity. It operates in enhancement mode for switching applications. With a max drain current of 0.34A and breakdown voltage of 60V, it's ideal for high-power circuits in various electronic devices.
60 V
.34 A
3.9 ohm
10 pF
TO-236AB
-65 Cel
.83 W
2N7002T,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .3 A; JEDEC-95 Code: TO-236AB;
.3 A
5 ohm
BF1205C,115
NXP Semiconductors' BF1205C,115 is a N-CHANNEL FET for SWITCHING applications. It has a 6V DS Breakdown Voltage and max Drain Current of 0.03A. With PLASTIC/EPOXY body, it operates in ENHANCEMENT MODE at 150°C.
COMPLEX
6 V
.03 A
.18 W
BF1210,115
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; JESD-30 Code: R-PDSO-G6; Transistor Element Material: SILICON;
COMMON SOURCE, 2 ELEMENTS
DUAL GATE, ENHANCEMENT MODE
AMPLIFIER
BF1214,115
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): .03 A;
PHK24NQ04LT,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: MS-012; JESD-30 Code: R-PDSO-G8; No. of Terminals: 8;
40 V
21.2 A
.0077 ohm
MS-012
R-PDSO-G8
PHK28NQ03LT,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.25 W; Terminal Position: DUAL; Qualification: Not Qualified;
23.7 A
.0065 ohm
6.25 W
PHK4NQ20T,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.25 W; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
4 A
.13 ohm
FET General Purpose Powers
PHKD13N03LT,118
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 2; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE;
10.4 A
MS-012AA
PMBFJ620,115
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .19 W; Maximum Feedback Capacitance (Crss): 2.5 pF; Minimum DS Breakdown Voltage: 25 V;
LOW NOISE
SEPARATE, 2 ELEMENTS
25 V
2.5 pF
.19 W
FET General Purpose Small Signal
PMR280UN,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .53 W; JESD-30 Code: R-PDSO-G3; Terminal Form: GULL WING;
.98 A
.34 ohm
.53 W
PMR400UN,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .53 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
.8 A
.48 ohm
PMV31XN,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: TIN; JESD-30 Code: R-PDSO-G3;
5.9 A
.037 ohm
PMV45EN,215
PMV45EN,215 by NXP Semiconductors is a N-CHANNEL FET with 30V DS Breakdown Voltage and 5.4A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2W and can withstand temperatures up to 150°C.
5.4 A
.042 ohm
IEC-60134
PMWD20XN,118
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G8; Package Body Material: PLASTIC/EPOXY;
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
.022 ohm
MO-153
PMWD26UN,518
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel; Maximum Drain-Source On Resistance: 7800 ohm;
5.2 A
7800 ohm
MO-153AB
PMWD30UN,518
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: GULL WING;
5 A
.04 ohm
2N7002ET3G
2N7002ET3G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 0.26A max drain current. Ideal for switching applications, it operates in enhancement mode with built-in diode, GULL WING terminals, and 150°C max temp.
.26 A
.3 W
2N7002KT3G
2N7002KT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 0.32A Drain Current and 1.6ohm On Resistance. Operating at 150 °C, it comes in a PLASTIC/EPOXY package with GULL WING terminals.
.32 A
1.6 ohm
2N7002WT3G
2N7002WT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.31A Drain Current, and 1.6 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with built-in diode and resistor. Operates in ENHANCEMENT MODE at max temp of 150°C, making it suitable for various electronic devices.
SINGLE WITH BUILT-IN DIODE AND RESISTOR
.31 A
.33 W
NTZD5110NT5G
NTZD5110NT5G by Onsemi is a N-CHANNEL FET with 2 elements & built-in diode, ideal for switching applications. Features include 60V DS breakdown voltage, 0.294A max drain current, and 1.6 ohm max on resistance. With small outline package style & operating temp up to 150 °C, it's suitable for various electronic designs.
.294 A
CSD75205W1015
Texas Instruments
CSD75205W1015 by Texas Instruments is a P-CHANNEL FET for SWITCHING applications. Features include 20V DS Breakdown Voltage, 1.2A Drain Current, and 0.18ohm On Resistance. With a max operating temperature of 150°C, it's ideal for high-performance electronic devices requiring efficient power management.
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
1.2 A
.18 ohm
33 pF
R-XBGA-B6
GRID ARRAY
.75 W
BALL
BOTTOM
PHT4NQ10LT,135
NXP Semiconductors PHT4NQ10LT,135 is a N-CHANNEL FET with 100V DS breakdown voltage and 3.5A max drain current. Ideal for switching applications, it features a built-in diode, 0.25 ohm max on resistance, and operates in enhancement mode at up to 150°C.
100 V
3.5 A
.25 ohm
6.9 W
BSS119E6433
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL;
.17 A
6 ohm
4.1 pF
.36 W
TF202THC-5-TL-H
TF202THC-5-TL-H by Onsemi is a N-CHANNEL FET with 0.1W power dissipation, 150 °C max temp, and TIN BISMUTH finish. Ideal for surface mount applications in small signal circuits requiring high temperature tolerance.
JUNCTION
e6
.1 W
TIN BISMUTH
NTHD3133PFT1G
NTHD3133PFT1G by Onsemi is a P-CHANNEL FET for SWITCHING applications. It has a 20V DS Breakdown Voltage, 3.2A Drain Current, and 0.08 ohm On Resistance. With ENHANCEMENT MODE operation and RECTANGULAR package shape, it's ideal for high-power circuit designs requiring efficient switching capabilities.
2.1 W
NTHD3133PFT3G
NTHD3133PFT3G by Onsemi is a P-CHANNEL FET for switching applications. Features include 20V DS breakdown voltage, 3.2A max drain current, and 0.08 ohm max on resistance. Ideal for enhancement mode operation in small outline packages with tin finish terminals.
DMN3115UDM-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; JESD-30 Code: R-PDSO-G6; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
LOW THRESHOLD
3.22 A
.06 ohm
.9 W
DMN2170U-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .6 W; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY;
HIGH RELIABILITY
2.3 A
.07 ohm
34 pF
.6 W
DMN2230U-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .6 W; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 20 V;
2 A
.11 ohm
30 pF
Matte Tin (Sn)
NTHS4166NT1G
NTHS4166NT1G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 8.2A max drain current, and 0.022 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a built-in diode, small outline package style, and can withstand up to 150°C operating temperature.
8.2 A
4.9 A
R-PDSO-C8
2.2 W
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