Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BSL316CL6327HTSA1
Infineon Technologies
Infineon's BSL316CL6327HTSA1 is a Small Signal FET with N/P-Channel, 2 elements & built-in diode. Operating in enhancement mode, it has max drain current of 1.4A and on-resistance of 0.16 ohm. Ideal for applications requiring high-speed switching in compact designs at up to 150°C.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
30 V
1.4 A
.16 ohm
METAL-OXIDE SEMICONDUCTOR
7 pF
R-PDSO-G6
2
6
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
N-CHANNEL AND P-CHANNEL
Not Qualified
YES
GULL WING
DUAL
SILICON
BSD816SNL6327HTSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
AVALANCHE RATED
SINGLE WITH BUILT-IN DIODE
20 V
10 pF
1
N-CHANNEL
BSL202SNL6327HTSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; No. of Elements: 1; Package Style (Meter): SMALL OUTLINE;
7.5 A
.022 ohm
60 pF
BSL205NL6327HTSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON;
2.5 A
.05 ohm
24 pF
BSL214NL6327HTSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): NOT SPECIFIED; Package Body Material: PLASTIC/EPOXY;
1.5 A
.14 ohm
9 pF
BSL215PL6327HTSA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G6;
.15 ohm
128 pF
P-CHANNEL
BSL302SNL6327HTSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .025 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
7.1 A
.025 ohm
43 pF
BSL306NL6327HTSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 2.3 A; Qualification: Not Qualified; Additional Features: AVALANCHE RATED;
2.3 A
.057 ohm
17 pF
BSL308PEL6327HTSA1
Infineon's BSL308PEL6327HTSA1 is a P-CHANNEL FET with 2 elements, built-in diode, and 30V DS breakdown voltage. Ideal for small outline applications, it operates in enhancement mode with max ID of 2.1A and 0.08Ω RDS(on), featuring a max temp of 150°C.
LOGIC LEVEL COMPATIBLE
2.1 A
.08 ohm
7.8 pF
BSL315PL6327HTSA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE;
84 pF
BSL802SNL6327HTSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 7.5 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1;
77 pF
BSL806NL6327HTSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;
28.6 pF
BSS123L6327HTSA1
BSS123L6327HTSA1 by Infineon is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A ID, and 6 ohm RDS(on). Ideal for small outline applications, it operates in enhancement mode with a peak reflow temp of 260°C.
100 V
.17 A
6 ohm
6.3 pF
R-PDSO-G3
e3
3
-55 Cel
260
MATTE TIN
40
BSS119L6327HTSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
4.1 pF
.36 W
BSR315PL6327HTSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .62 A; Minimum DS Breakdown Voltage: 60 V; JESD-30 Code: R-PDSO-G3;
60 V
.62 A
.8 ohm
30 pF
BSR316PL6327HTSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: 1.8 ohm;
.36 A
1.8 ohm
20 pF
BSR92PL6327HTSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
250 V
.14 A
11 ohm
8 pF
BSL314PEL6327HTSA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .14 ohm; No. of Elements: 2; Maximum Drain Current (ID): 1.5 A;
11 pF
BSD314SPEH6327XTSA1
Infineon's BSD314SPEH6327XTSA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage. It features SINGLE configuration with BUILT-IN DIODE, suitable for ENHANCEMENT MODE applications. With 0.5W power dissipation and -55 to 150 °C operating range, it meets AEC-Q101 standards for automotive use.
.5 W
AEC-Q101
TIN
2SJ360(TE12L,F)
Toshiba
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Minimum DS Breakdown Voltage: 60 V; Maximum Drain Current (ID): 1 A;
DRAIN
1 A
1.2 ohm
TO-243AA
R-PSSO-F3
1.5 W
Other Transistors
FLAT
SINGLE
SWITCHING
MCH3375-TL-H
Onsemi
MCH3375-TL-H by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 1.6A Drain Current, and 0.295 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 150°C. Package: PLASTIC/EPOXY, Surface Mountable RECTANGULAR shape with FLAT terminals.
1.6 A
.295 ohm
R-PDSO-F3
e6
.8 W
TIN BISMUTH
30
SI2392DS-T1-GE3
Vishay Intertechnology
SI2392DS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 100V DS breakdown voltage, 3.1A max drain current, and 0.126 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode and enhancement mode operation. Package style is small outline, surface mountable with Gull Wing terminals.
3.1 A
.126 ohm
TO-236AB
Matte Tin (Sn)
NVLJD4007NZTBG
NVLJD4007NZTBG by Onsemi is a N-CHANNEL FET with max drain current of 0.245A and power dissipation of 0.755W. Ideal for applications requiring small signal amplification in surface mount technology, operating at up to 150 °C.
.245 A
.755 W
FET General Purpose Power
NTTFS4C06NTWG
NTTFS4C06NTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 67A Drain Current, and 0.0061 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with 5 terminals and 31W Power Dissipation at 150°C max temp.
67 A
11 A
.0061 ohm
S-PDSO-F5
5
SQUARE
31 W
Matte Tin (Sn) - annealed
NTTFS4C13NTAG
NTTFS4C13NTAG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 38A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 0.0094 ohm On Resistance, and operates in ENHANCEMENT MODE. This small outline transistor has a max power dissipation of 21.5W and can withstand temperatures up to 150 °C.
38 A
7.2 A
.0094 ohm
21.5 W
NTTFS4C13NTWG
NTTFS4C13NTWG by Onsemi is a N-channel FET with 30V DS breakdown voltage and 38A max drain current. Ideal for switching applications, it features a built-in diode, 0.0094 ohm RDS(on), and operates in enhancement mode. With a small outline package style and max power dissipation of 21.5W, it is suitable for high-temperature environments up to 150 °C.
5LP01SS-TL-E
5LP01SS-TL-E by Onsemi is a P-CHANNEL FET with 0.07A max drain current and 0.15W power dissipation. Ideal for applications requiring surface mount technology, such as temperature-sensitive circuits in consumer electronics.
.07 A
.15 W
Tin/Bismuth (Sn/Bi)
MCH3376-TL-E
MCH3376-TL-E by Onsemi is a P-CHANNEL FET with 1.5A max drain current and 0.8W power dissipation. Ideal for applications requiring surface mount technology, such as in METAL-OXIDE SEMICONDUCTOR circuits operating up to 150 °C.
SCH1330-TL-H
SCH1330-TL-H by Onsemi is a P-CHANNEL FET with 1.5A max drain current and 1W max power dissipation. Ideal for surface mount applications, it operates at up to 150 °C making it suitable for various electronic devices requiring high temperature resistance.
1 W
SCH1332-TL-H
SCH1332-TL-H by Onsemi is a P-CHANNEL FET with 2.5A max drain current and 1W power dissipation. Ideal for surface mount applications, it operates up to 150 °C, making it suitable for various electronic devices requiring high-performance transistors.
SCH1343-TL-H
SCH1343-TL-H by Onsemi is a P-CHANNEL FET with 3.5A max drain current and 1W power dissipation. Ideal for applications requiring high temperature tolerance up to 150 °C, it features surface mount configuration for compact designs in electronics.
3.5 A
CPH3360-TL-H
CPH3360-TL-H by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 1.6A Drain Current, 0.303 ohm On Resistance, and 150 °C Operating Temperature. Package: PLASTIC/EPOXY, GULL WING terminals in SMALL OUTLINE style.
.303 ohm
TO-236
.9 W
SCH1345-TL-H
SCH1345-TL-H by Onsemi is a P-CHANNEL FET with 4.5A max drain current and 1W max power dissipation. Ideal for applications requiring high temperature resistance up to 150 °C, such as in surface mount configurations for electronic devices.
4.5 A
BSP171PL6327HTSA1
Infineon's BSP171PL6327HTSA1 is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring SINGLE configuration with BUILT-IN DIODE, it has 1.9A ID and 0.3 ohm RDS(on). AEC-Q101 compliant, this MOSFET offers ENHANCEMENT MODE operation in a SMALL OUTLINE package.
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
1.9 A
.3 ohm
55 pF
R-PDSO-G4
4
BSS84PL6327HTSA1
BSS84PL6327HTSA1 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, operating in enhancement mode. With a max drain current of 0.17A and on-resistance of 12 ohm, it offers reliable performance in small outline packages at temperatures up to 150°C.
12 ohm
3 pF
PMV30XN,215
NXP Semiconductors
PMV30XN,215 by NXP Semiconductors is an N-channel FET designed for efficient switching applications. It features a max drain current of 3.2 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Ideal for compact electronic designs with surface mount capabilities.
3.2 A
.035 ohm
.52 W
IEC-60134
PMDPB38UNE,115
NXP Semiconductors' PMDPB38UNE,115 is a N-CHANNEL FET with 2 elements and built-in diode for switching applications. It has a max drain current of 5A, min DS breakdown voltage of 20V, and max power dissipation of 0.51W. This small outline transistor operates in enhancement mode at up to 150°C.
5 A
4 A
.061 ohm
S-PDSO-N6
.51 W
NO LEAD
PMGD175XN,115
PMGD175XN,115 by NXP Semiconductors is a N-CHANNEL FET for SWITCHING applications. It features 30V DS Breakdown Voltage, 0.9A Drain Current, and 0.225 ohm On Resistance. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 150°C.
.9 A
.225 ohm
.905 W
PMDPB95XNE,115
PMDPB95XNE,115 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 30V. It is used for switching applications and has a max drain current of 3.1A and max power dissipation of 6.25W.
2.4 A
.12 ohm
6.25 W
PMV65UN,215
PMV65UN,215 by NXP Semiconductors is an N-channel FET designed for switching applications. It features a max drain current of 2.2 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Its compact surface mount design ensures efficient performance in electronic circuits.
2.2 A
2 A
.076 ohm
2.17 W
AO3402
Alpha & Omega Semiconductor
AO3402 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS breakdown voltage and 4A ID. Ideal for switching applications, it features a built-in diode, 0.052 ohm RDS(on), and 25pF Crss. The GULL WING terminal form and small outline package make it suitable for surface mount designs.
.052 ohm
25 pF
DMN4020LFDE-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.03 W; Peak Reflow Temperature (C): 260; Additional Features: HIGH RELIABILITY;
HIGH RELIABILITY
40 V
6.7 A
.02 ohm
S-PDSO-N3
e4
2.03 W
NICKEL PALLADIUM GOLD
DMN53D0LW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .42 W; Maximum Feedback Capacitance (Crss): 3.9 pF; Transistor Element Material: SILICON;
50 V
.25 A
2 ohm
3.9 pF
.42 W
TF414T5G
TF414T5G by Onsemi is a N-CHANNEL FET with 0.1W power dissipation, suitable for surface mount applications. With a max operating temp of 150 °C and peak reflow temp of 260°C, it features junction technology and nickel palladium gold terminal finish. Ideal for small signal amplification in electronic circuits.
JUNCTION
.1 W
TPIC2322LD
Texas Instruments
TPIC2322LD by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 3 ELEMENTS with BUILT-IN DIODE, 0.75A Max Drain Current, and 0.7 ohm Drain-Source On Resistance. With a 60V DS Breakdown Voltage, it operates in ENHANCEMENT MODE at up to 150°C.
ISOLATED
COMMON SOURCE, 3 ELEMENTS WITH BUILT-IN DIODE
.75 A
.7 ohm
40 pF
MS-012AA
R-PDSO-G8
8
.95 W
TPS1101DR
TPS1101DR by Texas Instruments is a P-CHANNEL FET for switching applications. It features a min DS Breakdown Voltage of 15V, Max Drain Current of 2.3A, and Max Power Dissipation of 0.791W. With a package style of SMALL OUTLINE and operating temperature range from -40 to 150 °C, it is ideal for enhancement mode switching in various electronic devices.
LOGIC LEVEL COMPATIBLE, ESD PROTECTED
15 V
.19 ohm
-40 Cel
.791 W
BSS138/L99Z
National Semiconductor
BSS138/L99Z by National Semiconductor is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.22A ID, and 6 ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE, featuring GULL WING terminals and operating up to 150°C.
.22 A
2N7002/L99Z
2N7002/L99Z by National Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage. It is used for SWITCHING applications in ENHANCEMENT MODE, with 0.115A ID and 7.5Ω RDS(on). The transistor operates b/w -55°C to 150°C, featuring a GULL WING terminal form and METAL-OXIDE SEMICONDUCTOR technology.
.115 A
7.5 ohm
5 pF
.2 W
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