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BSS123L6327HTSA1

Infineon Technologies

BSS123L6327HTSA1 by Infineon Technologies

BSS123L6327HTSA1 by Infineon is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A ID, and 6 ohm RDS(on). Ideal for small outline applications, it operates in enhancement mode with a peak reflow temp of 260°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 11,074 parts In-Stock

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11,074

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VNN

France . 5,238 parts In-Stock

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5,238

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Chip Stock

USA . 5,100 parts In-Stock

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5,100

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Digiode

USA . 996 parts In-Stock

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996

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Nova Conductors

Japan . 64 parts In-Stock

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64

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Distributors (Availability)

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Corohmni

South Africa . 61 parts In-Stock

1+ parts

$0.539

100+ parts

-

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61

$0.539

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Aztec Data Supply Inc.

USA . 159 parts In-Stock

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$0.800

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159

$0.800

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Modulus Dynamics

Lithuania . 16,992 parts In-Stock

1+ parts

$1.473

100+ parts

$1.414

1k+ parts

$1.355

10k+ parts

-

16,992

$1.473

$1.414

$1.355

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Ampacity Inc.

Singapore . 1,293 parts In-Stock

1+ parts

$17.050

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$17.050

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AZTECH Wire

Italy . 276 parts In-Stock

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$19.860

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276

$19.860

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Semicontronic

India . 1,450 parts In-Stock

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$23.050

100+ parts

$22.474

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$22.358

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1,450

$23.050

$22.474

$22.358

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Perfect Parts

USA . 909,335 parts In-Stock

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Microchip USA

USA . 4,910 parts In-Stock

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4,910

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Continental Prestige Electronics

USA . 4,096 parts In-Stock

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Argo Parts USA

USA . 287 parts In-Stock

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287

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Robosynatics

Brazil . 150 parts In-Stock

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150

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Lucentia Tech

USA . 150 parts In-Stock

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$1.774

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$1.643

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$1.643

150

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$1.774

$1.643

$1.643

Advanced Electronics

New Zealand . 55 parts In-Stock

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55

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Corphita

USA . 54 parts In-Stock

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54

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Bastille Electronics

Australia . 10 parts In-Stock

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10

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Overview

Experience the superior performance of the BSS123L6327HTSA1 by Infineon Technologies, a leading manufacturer in the industry. This small signal field effect transistor offers a multitude of applications, from power management to signal amplification, with its N-channel configuration and built-in diode. The high-quality construction and innovative technology ensure reliability and efficiency in every use. Upgrade your electronic devices with this state-of-the-art component and enjoy enhanced functionality and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making this product suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

Offers a high level of performance and efficiency, making this product ideal for amplification and signal processing tasks.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit designs and reduces the need for additional components, making this product easy to use and cost-effective.

Surface Mount: YES

Allows for easy integration onto circuit boards, saving space and making the product suitable for compact designs.

Minimum DS Breakdown Voltage: 100 V

Provides high voltage tolerance, making this product suitable for applications requiring robustness and reliability.

Package Shape: RECTANGULAR

Offers versatility in mounting options and compatibility with standard PCB layouts, making this product easy to incorporate into designs.

Terminal Form: GULL WING

Facilitates secure connections and soldering, ensuring reliable performance in various operating conditions.

Operating Mode: ENHANCEMENT MODE

Enables easy control and modulation of the transistor, making this product suitable for a wide range of applications.

No. of Terminals: 3

Provides flexibility in circuit configurations and applications, enhancing the versatility of this product.

Package Style (Meter): SMALL OUTLINE

Ensures compatibility with standard equipment and facilitates easy installation, making this product convenient to use.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high efficiency and low power consumption, making this product ideal for energy-efficient applications.

Maximum Operating Temperature: 150 °C

Allows for reliable performance in high-temperature environments, increasing the versatility of this product.

Transistor Element Material: SILICON

Provides stable and consistent performance, making this product suitable for long-term use in various applications.

Minimum Operating Temperature: -55 °C

Ensures reliable operation in low-temperature conditions, making this product suitable for a wide range of environments.

Terminal Finish: MATTE TIN

Facilitates strong and durable connections, enhancing the reliability and longevity of this product.

Maximum Drain Current (ID): 0.17 A

Allows for high current capabilities, making this product suitable for applications requiring robust performance.

Maximum Drain-Source On Resistance: 6 ohm

Provides low resistance for efficient signal processing, ensuring high performance in various applications.

Terminal Position: DUAL

Offers flexibility in circuit layouts and connections, enhancing the versatility of this product.

Maximum Time At Peak Reflow Temperature (s): 40

Allows for convenient and efficient soldering processes, making this product easy to install and use.

Peak Reflow Temperature °C: 260

Ensures compatibility with standard reflow processes, making this product easy to integrate into manufacturing environments.

Maximum Feedback Capacitance (Crss): 6.3 pF

Offers low capacitance for efficient signal processing, making this product ideal for high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSS123L6327HTSA1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

.17 A

Maximum Drain-Source On Resistance:

6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

6.3 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Element Material:

SILICON

Trade Compliance

BSS123L6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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