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PMV30XN,215

NXP Semiconductors

PMV30XN,215 by NXP Semiconductors

PMV30XN,215 by NXP Semiconductors is an N-channel FET designed for efficient switching applications. It features a max drain current of 3.2 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Ideal for compact electronic designs with surface mount capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,174 parts In-Stock

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Anansix

USA . 1,529 parts In-Stock

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1,529

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Digiode

USA . 605 parts In-Stock

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605

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ACDS - Activité Composants Distribution Service

France . 250 parts In-Stock

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$2.152

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$1.958

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$1.765

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3,000

$2.152

$1.958

$1.765

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AZTECH Wire

Italy . 931 parts In-Stock

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$15.820

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931

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One Stop Electronics

USA . 987 parts In-Stock

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$44.050

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987

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QUARKTWIN TECHNOLOGY LTD

USA . 23,983 parts In-Stock

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Kepictronics

USA . 9,800 parts In-Stock

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UNI Independent Distributors

Spain . 5,960 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,769 parts In-Stock

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Corphita

USA . 1,391 parts In-Stock

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Perfect Parts

USA . 560 parts In-Stock

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560

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Microchip USA

USA . 371 parts In-Stock

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371

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Cyclops Electronics Ltd (Excess)

UK . 250 parts In-Stock

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Glotronic Ltd.

UK . 200 parts In-Stock

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Overview

Discover the PMV30XN,215 by NXP Semiconductors—a top-tier small signal FET designed to enhance your switching applications with unmatched efficiency and reliability. Crafted from premium materials and backed by NXP's industry-leading expertise, this versatile transistor delivers superior performance while ensuring robust operation in diverse environments. Elevate your projects today with a component that combines quality, innovation, and exceptional value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers a lightweight and durable package, ensuring reliability in various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically provide lower on-resistance and higher efficiency, making them ideal for power management applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for reverse polarity protection, enhancing safety and functionality in circuit designs.

Transistor Application: SWITCHING

Optimized for switching applications, this FET can efficiently control the flow of electrical current, suitable for various electronic devices.

Surface Mount: YES

Surface-mount technology allows for compact PCB designs, saving space and reducing manufacturing costs.

Minimum DS Breakdown Voltage: 20 V

A minimum breakdown voltage of 20 V ensures reliable operation in circuits where voltage spikes may occur.

Package Shape: RECTANGULAR

The rectangular shape is commonly used in standard PCB footprints, enhancing compatibility with existing designs.

Terminal Form: GULL WING

Gull wing leads facilitate better soldering and provide mechanical stability on PCBs, ensuring robust connections.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for low-power consumption in off-state, contributing to energy efficiency in applications.

Maximum Drain Current (Abs) (ID): 3.2 A

A maximum drain current of 3.2 A supports various applications, from consumer electronics to industrial equipment.

No. of Terminals: 3

The 3-terminal design simplifies layout and connection in circuit designs, facilitating easier integration.

Maximum Power Dissipation (Abs): 0.52 W

A power dissipation of 0.52 W allows for efficient thermal management, ensuring reliable operation under load.

Package Style (Meter): SMALL OUTLINE

The small outline package style is space-efficient, making it suitable for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology enables high-speed switching capabilities, beneficial for modern electronic applications.

Maximum Operating Temperature: 150 °C

A high operating temperature rating of 150 °C enhances reliability and stability in demanding environments.

Transistor Element Material: SILICON

Silicon is a well-established material in semiconductor devices, ensuring robustness and performance.

Terminal Finish: TIN

Tin finishing offers good solderability and corrosion resistance, improving overall device reliability.

Maximum Drain Current (ID): 3.2 A

Reiterating a maximum drain current of 3.2 A signifies its robustness for a wide range of applications.

Maximum Drain-Source On Resistance: 0.035 ohm

A low on-resistance ensures minimal power loss, enhancing efficiency in power switch applications.

Terminal Position: DUAL

Dual terminal position aids in maintaining compact designs while optimizing space on PCBs.

Maximum Time At Peak Reflow Temperature (s): 30

This specification allows for compatibility with standard soldering processes, making assembly straightforward.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C accommodates various solder types, ensuring reliable solder joints.

Reference Standard: IEC-60134

Compliance with IEC-60134 indicates adherence to international safety and quality standards, assuring product reliability.

Technical Specifications

Small Signal Field Effect Transistors (FET) PMV30XN,215 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

3.2 A

Maximum Drain Current (ID):

3.2 A

Maximum Drain-Source On Resistance:

.035 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

IEC-60134

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PMV30XN,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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