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PMV32UP,215

NXP Semiconductors

PMV32UP,215 by NXP Semiconductors

PMV32UP,215 by NXP Semiconductors is a P-CHANNEL small signal FET with a min DS breakdown voltage of 20V. It is used for switching applications and has a max drain current of 4A.

Median Price

$0.171

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$0.594

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Newark

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$0.488

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Rochester

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$0.132

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$0.098

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Verical

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Chip1Stop

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Element14

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6,771

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Farnell

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NAC Semi

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Semicontronic

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Ampacity Inc.

Singapore . 43,225 parts In-Stock

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Benley Electronics

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595

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Modulus Dynamics

Lithuania . 25,837 parts In-Stock

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Advanced Electronics

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7,046

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Microchip USA

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Glotronic Ltd.

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A-Z Elektronik GmbH

Germany . 1,769 parts In-Stock

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Supply Digital

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Futuretech Components

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Overview

Discover the PMV32UP,215 by NXP Semiconductors - a game-changer in small signal field effect transistors! With impeccable quality and advanced manufacturing techniques, NXP delivers unparalleled performance. This P-channel transistor with built-in diode offers incredible switching capabilities, making it perfect for various applications. Experience the value of enhanced mode operation, high power dissipation, and maximum drain current. Say goodbye to limitations and embrace the advantages that this cutting-edge technology brings. Upgrade your devices with the PMV32UP,215 and witness the difference it makes in your projects!

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - This material offers durability and protection, making it a reliable choice for various environments.

Polarity or Channel Type

P-CHANNEL - With P-channel type, this transistor can provide efficient switching capabilities, making it suitable for a wide range of applications.

Configuration

SINGLE WITH BUILT-IN DIODE - The built-in diode enhances the transistor's performance by allowing for smoother and more efficient switching operations.

Transistor Application

SWITCHING - Designed specifically for switching applications, this transistor ensures fast and reliable operations in electronic circuits.

Surface Mount

YES - Being surface mountable, this transistor offers convenience in PCB assembly and saves space, making it ideal for compact designs.

Minimum DS Breakdown Voltage

20 V - With a minimum breakdown voltage of 20 V, this transistor can handle higher voltages, providing better protection against voltage spikes.

Package Shape

RECTANGULAR - The rectangular package shape allows for easier and more efficient PCB mounting, simplifying the manufacturing process.

Terminal Form

GULL WING - The gull wing terminal form ensures secure and reliable soldering, reducing the risk of solder joint failure and enhancing overall product reliability.

Operating Mode

ENHANCEMENT MODE - Operating in enhancement mode, this transistor offers improved performance characteristics, such as high gain and low saturation voltage.

No. of Elements

1 - With a single element, this transistor simplifies circuit design and integration, allowing for easier implementation into various electronic systems.

Maximum Drain Current (Abs) (ID)

4 A - The high maximum drain current capability of 4 A makes this transistor suitable for applications requiring high current handling.

No. of Terminals

3 - Having three terminals allows for easy connectivity and integration into a circuit, ensuring compatibility with a wide range of designs.

Maximum Power Dissipation (Abs)

4.15 W - The high maximum power dissipation capability of 4.15 W ensures reliable performance even during demanding applications, making it a versatile choice.

Package Style (Meter)

SMALL OUTLINE - The small outline package style provides compactness, facilitating efficient use of board space and enabling designs with limited real estate.

Field Effect Transistor Technology

METAL-OXIDE SEMICONDUCTOR - Utilizing metal-oxide semiconductor technology, this transistor offers excellent performance characteristics, such as low gate leakage and high noise immunity.

Maximum Operating Temperature

150 °C - With a maximum operating temperature of 150°C, this transistor can withstand higher temperatures, ensuring reliable operation even in demanding environments.

Transistor Element Material

SILICON - The use of silicon as the transistor element material offers superior performance, including low signal distortion and high gain.

Terminal Finish

TIN - The tin terminal finish provides good solderability, promoting reliable connections during assembly and enhancing overall product quality.

Maximum Drain-Source On Resistance

0.036 ohm - With a low maximum drain-source on resistance, this transistor minimizes power loss and improves overall efficiency.

Terminal Position

DUAL - Having a dual terminal position allows for flexible integration and enables compatibility with various circuit designs and configurations.

Moisture Sensitivity Level (MSL)

1 - With an MSL of 1, this transistor has the lowest moisture sensitivity, ensuring longer shelf life and reliable performance during soldering processes.

Maximum Time At Peak Reflow Temperature (s)

30 - With a maximum time of 30 seconds, this transistor can withstand longer reflow processes, facilitating efficient assembly in production.

Peak Reflow Temperature °C

260 - The high peak reflow temperature of 260°C ensures proper solder reflow, leading to reliable solder joints and enhancing overall product quality.

Technical Specifications

Small Signal Field Effect Transistors (FET) PMV32UP,215 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

4 A

Maximum Drain Current (ID):

4 A

Maximum Drain-Source On Resistance:

.036 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PMV32UP,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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