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PMV30UN2R

Nexperia

PMV30UN2R by Nexperia

PMV30UN2R by Nexperia is a N-CHANNEL FET with 20V DS breakdown voltage and 4.2A max drain current, ideal for switching applications. It features a 0.032 ohm max on resistance, GULL WING terminals, and operates in enhancement mode. This small outline transistor has a built-in diode and is surface mountable for compact designs.

Median Price

$0.132

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 2,000 parts In-Stock

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$0.159

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$0.151

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Farnell

UK . 1,572,000 parts In-Stock

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TTI

USA . 183,000 parts In-Stock

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$0.060

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Avnet

USA . 75,000 parts In-Stock

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Arrow

USA . 36,000 parts In-Stock

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Element14

Singapore . 32,077 parts In-Stock

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$0.220

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$0.168

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$0.165

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$0.165

EBV Elektronik

Germany . 12,000 parts In-Stock

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Rochester

USA . 6,000 parts In-Stock

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$0.165

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$0.137

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$0.122

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Verical

USA . 6,000 parts In-Stock

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$0.153

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Chip1Stop

Japan . 5,880 parts In-Stock

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$0.112

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$0.064

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Distributors (In-Stock)

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Nova Conductors

Japan . 300 parts In-Stock

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$0.144

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NAC Semi

USA . 525,000 parts In-Stock

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Chip Stock

USA . 134,500 parts In-Stock

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Martec Srl

Italy . 80,610 parts In-Stock

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Vyrian

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Bristol Electronics

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Micros

Poland . 2,700 parts In-Stock

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$0.064

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Partservice

France . 2,700 parts In-Stock

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$0.082

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$0.064

2,700

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$0.082

$0.064

Micros sp.j. W. Kędra i J. Lic

Poland . 2,690 parts In-Stock

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$0.088

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$0.069

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$0.069

Sensible Micro Corp

USA . 210 parts In-Stock

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Semicontronic

India . 376,890 parts In-Stock

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$0.044

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$0.043

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$0.043

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$0.044

$0.043

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Ampacity Inc.

Singapore . 362,537 parts In-Stock

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$0.044

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AZTECH Wire

Italy . 7,634 parts In-Stock

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$0.080

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Argo Parts USA

USA . 4,068 parts In-Stock

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$0.118

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Netroflash

USA . 1,000 parts In-Stock

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$0.144

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$0.137

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$0.134

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$0.144

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Modulus Dynamics

Lithuania . 25,009 parts In-Stock

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$0.154

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Corohmni

South Africa . 374 parts In-Stock

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,321 parts In-Stock

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Perfect Parts

USA . 5,107,601 parts In-Stock

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Continental Prestige Electronics

USA . 924,000 parts In-Stock

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Eastek

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 33,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 28,045 parts In-Stock

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Robosynatics

Brazil . 25,871 parts In-Stock

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Lucentia Tech

USA . 25,871 parts In-Stock

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Kepictronics

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Lixinc

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Glotronic Ltd.

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Metaverse IC Inc.

Canada . 5,000 parts In-Stock

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Supply Digital

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Overview

Unlock the potential of your electronic devices with the PMV30UN2R by Nexperia. As a leading manufacturer in the industry, Nexperia guarantees top-notch quality and reliability. This N-CHANNEL Small Signal Field Effect Transistor (FET) with a built-in diode is perfect for switching applications. With a low drain-source resistance and high maximum drain current, this transistor offers unmatched performance and efficiency. Trust Nexperia to deliver cutting-edge technology that exceeds expectations and takes your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability in various applications.

Polarity or Channel Type: N-CHANNEL

Offers efficient current flow in one direction, making it suitable for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Allows for simplified circuit design and integration, saving space and reducing component count.

Transistor Application: SWITCHING

Ideal for fast switching operations, improving performance and reducing power consumption.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and cost in production.

Minimum DS Breakdown Voltage: 20 V

Supports high voltage tolerance, ensuring reliable operation in demanding conditions.

Package Shape: RECTANGULAR

Facilitates straightforward mounting and placement on the PCB, enhancing ease of installation.

Terminal Form: GULL WING

Provides secure mechanical connection and efficient heat dissipation, enhancing overall performance.

Operating Mode: ENHANCEMENT MODE

Offers flexibility in controlling current flow, allowing for precise switching operations.

No. of Terminals: 3

Simplifies connection and circuit layout, improving overall design efficiency.

Package Style (Meter): SMALL OUTLINE

Saves space on the PCB and enhances thermal dissipation, improving overall system performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Delivers high switching speeds and low power consumption, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Ensures high reliability and performance stability over a wide temperature range.

Terminal Finish: TIN

Provides excellent conductivity and corrosion resistance, enhancing overall reliability and longevity.

Maximum Drain Current (ID): 4.2 A

Offers high current handling capacity, suitable for a variety of power switching applications.

Maximum Drain-Source On Resistance: 0.032 ohm

Enables efficient power management and minimal voltage drops, improving overall circuit efficiency.

Terminal Position: DUAL

Facilitates easy and secure connections, ensuring reliable performance in various conditions.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering and reflowing process, enhancing the product's reliability during assembly.

Peak Reflow Temperature °C: 260

Withstands high-temperature soldering processes, ensuring robust solder joints and long-term reliability.

Reference Standard: IEC-60134

Complies with international standards, ensuring quality and reliability in the product.

Technical Specifications

Small Signal Field Effect Transistors (FET) PMV30UN2R attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Nexperia

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

4.2 A

Maximum Drain-Source On Resistance:

.032 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PMV30UN2R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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