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PMV35EPE

NXP Semiconductors

PMV35EPE by NXP Semiconductors

PMV35EPE by NXP Semiconductors is a P-CHANNEL FET with 30V DS Breakdown Voltage and 4.2A ID. Ideal for SWITCHING applications, it features 0.045 ohm RDS(on) and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has GULL WING terminals and is surface mountable.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Chip Stock

USA . 121,000 parts In-Stock

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Vyrian

USA . 8,289 parts In-Stock

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Anansix

USA . 1,443 parts In-Stock

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Nova Conductors

Japan . 98 parts In-Stock

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Digiode

USA . 70 parts In-Stock

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Corohmni

South Africa . 727 parts In-Stock

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$0.441

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727

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Aztec Data Supply Inc.

USA . 4,620 parts In-Stock

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$0.950

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Semicontronic

India . 423 parts In-Stock

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$2.050

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$1.999

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$1.988

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AZTECH Wire

Italy . 8,610 parts In-Stock

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$10.172

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Ampacity Inc.

Singapore . 247 parts In-Stock

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$23.050

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One Stop Electronics

USA . 236 parts In-Stock

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$25.050

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Lixinc

USA . 19,014 parts In-Stock

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Authorized Procurement Solutions

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A-Z Elektronik GmbH

Germany . 6,290 parts In-Stock

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Argo Parts USA

USA . 4,305 parts In-Stock

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Supply Digital

USA . 2,097 parts In-Stock

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Advanced Electronics

New Zealand . 1,542 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Corphita

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Continental Prestige Electronics

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UNI Independent Distributors

Spain . 261 parts In-Stock

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Overview

Upgrade your electronics with the PMV35EPE by NXP Semiconductors, a top-of-the-line P-Channel FET perfect for switching applications. Crafted from high-quality materials, this small signal transistor offers unparalleled performance and reliability. With its built-in diode and low on-resistance, this enhancement mode transistor provides exceptional value and efficiency. Trust in NXP Semiconductors to deliver cutting-edge technology that exceeds expectations. Elevate your projects with the PMV35EPE today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: P-CHANNEL

Efficient for certain circuit designs and applications, offering specific performance characteristics.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a diode in the transistor package, saving space and components.

Transistor Application: SWITCHING

Designed for switching applications, ensuring fast and reliable performance in changing states.

Surface Mount: YES

Allows for easy installation and soldering onto circuit boards, suitable for modern manufacturing processes.

Minimum DS Breakdown Voltage: 30 V

Can handle up to 30 volts, providing flexibility for different voltage requirements in circuits.

Package Shape: RECTANGULAR

Compact shape that fits well in tight spaces on PCBs, optimizing layout design.

Terminal Form: GULL WING

Facilitates easy soldering onto PCBs with surface mount technology, ensuring reliable connections.

Operating Mode: ENHANCEMENT MODE

Offers better control and efficiency in circuit operation, enhancing performance.

No. of Terminals: 3

Simple design with three terminals for easy integration into circuits, suitable for basic applications.

Package Style (Meter): SMALL OUTLINE

Compact and lightweight package design, ideal for miniaturized electronic devices and applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Reliable technology with good performance characteristics, ensuring stable operation in various conditions.

Transistor Element Material: SILICON

Common and reliable semiconductor material for transistors, offering good electrical properties.

Terminal Finish: TIN

Provides a reliable and stable connection on PCBs, ensuring good electrical conduction.

Maximum Drain Current (ID): 4.2 A

Capable of handling high currents, suitable for applications that require power switching.

Maximum Drain-Source On Resistance: 0.045 ohm

Low on-resistance for efficient power switching, reducing power losses in the circuit.

Terminal Position: DUAL

Dual terminal position for easy mounting on PCBs, allowing for flexible connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a specified time, ensuring reliable soldering during manufacturing.

Peak Reflow Temperature °C: 260

Capable of withstanding high reflow temperatures, suitable for lead-free soldering processes.

Reference Standard: IEC-60134

Complies with industry standards for quality and performance, ensuring reliability in various applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) PMV35EPE attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

4.2 A

Maximum Drain-Source On Resistance:

.045 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PMV35EPE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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