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PMDPB95XNE,115

NXP Semiconductors

PMDPB95XNE,115 by NXP Semiconductors

PMDPB95XNE,115 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 30V. It is used for switching applications and has a max drain current of 3.1A and max power dissipation of 6.25W.

Median Price

$0.074

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 309,000 parts In-Stock

1+ parts

-

100+ parts

$0.079

1k+ parts

$0.066

10k+ parts

$0.059

309,000

-

$0.079

$0.066

$0.059

Verical

USA . 309,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

$0.069

309,000

-

-

-

$0.069

Distributors (In-Stock)

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Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.058

100+ parts

-

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150

$0.058

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Digiode

USA . 793 parts In-Stock

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$0.062

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793

$0.062

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Vyrian

USA . 5,478 parts In-Stock

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5,478

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Anansix

USA . 854 parts In-Stock

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854

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Distributors (Availability)

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Semicontronic

India . 308,693 parts In-Stock

1+ parts

$0.055

100+ parts

$0.054

1k+ parts

$0.053

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-

308,693

$0.055

$0.054

$0.053

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Argo Parts USA

USA . 4,480 parts In-Stock

1+ parts

$0.058

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-

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$0.056

4,480

$0.058

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$0.056

Corphita

USA . 2,378 parts In-Stock

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$0.058

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-

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2,378

$0.058

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Advanced Electronics

New Zealand . 50 parts In-Stock

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$0.059

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$0.059

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$0.059

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50

$0.059

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$0.059

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Component Stockers USA

USA . 440,748 parts In-Stock

1+ parts

$0.070

100+ parts

$0.060

1k+ parts

$0.060

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$0.060

440,748

$0.070

$0.060

$0.060

$0.060

Microchip USA

USA . 388 parts In-Stock

1+ parts

$0.715

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-

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388

$0.715

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Corohmni

South Africa . 361 parts In-Stock

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$0.838

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361

$0.838

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Aztec Data Supply Inc.

USA . 4,637 parts In-Stock

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$1.390

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4,637

$1.390

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AZTECH Wire

Italy . 197 parts In-Stock

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$8.370

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197

$8.370

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Continental Prestige Electronics

USA . 309,000 parts In-Stock

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$0.078

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309,000

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$0.078

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QUARKTWIN TECHNOLOGY LTD

USA . 25,226 parts In-Stock

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UNI Independent Distributors

Spain . 3,438 parts In-Stock

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3,438

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Netroflash

USA . 50 parts In-Stock

1+ parts

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$0.057

1k+ parts

$0.055

10k+ parts

$0.054

50

-

$0.057

$0.055

$0.054

Overview

Experience top-notch quality and unmatched performance with the PMDPB95XNE,115 by NXP Semiconductors. As a leading manufacturer in the industry, NXP Semiconductors has perfected the art of creating Small Signal Field Effect Transistors (FET) that excel in various applications. This innovative product features an N-CHANNEL configuration with built-in diode elements, making it the perfect choice for switching purposes. With its compact square shape and surface mount capability, the PMDPB95XNE,115 offers convenience and flexibility in installation. Say goodbye to power limitations as this transistor boasts a maximum power dissipation of 6.25 W and a minimum DS breakdown voltage of 30 V. Trust in the advancement of METAL-OXIDE SEMICONDUCTOR technology and benefit from the maximum drain current of 2.4 A and a low drain-source on resistance of only 0.12 ohm. With NXP Semiconductors, you can be confident in their commitment to excellence and delivering products that exceed expectations. Discover the true potential of your projects with the PMDPB95XNE,115.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel type allows for easier integration in circuits and offers good performance in switching applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Having separate elements with built-in diode enhances the functionality and efficiency of the transistor.

Transistor Application: SWITCHING

Specialized for switching applications, ensuring optimal performance in the intended use cases.

Surface Mount: YES

Surface mount capability makes it easy to integrate into electronic circuits and saves space on the PCB.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this transistor can handle high voltage applications with ease.

Maximum Drain Current (Abs) (ID): 3.1 A

High maximum drain current rating allows for reliable operation under heavy load conditions.

Maximum Power Dissipation (Abs): 6.25 W

High power dissipation rating ensures the transistor can handle power efficiently without overheating.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures in various applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) PMDPB95XNE,115 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

3.1 A

Maximum Drain Current (ID):

2.4 A

Maximum Drain-Source On Resistance:

.12 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

IEC-60134

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PMDPB95XNE,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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