Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NTJD3158CT1G
Onsemi
NTJD3158CT1G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has a max drain current of 0.82A and on-resistance of 0.375 ohm. Operating at up to 150 °C, it features a peak reflow temp of 260°C and feedback capacitance of 5pF.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
.82 A
.63 A
.375 ohm
METAL-OXIDE SEMICONDUCTOR
5 pF
R-PDSO-G6
e3
1
2
6
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL AND P-CHANNEL
.35 W
Not Qualified
Other Transistors
YES
TIN
GULL WING
DUAL
30
SWITCHING
SILICON
DMN33D8LDW-13
Diodes Incorporated
DMN33D8LDW-13 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage and 0.25A max drain current. Ideal for switching applications, it features separate elements with built-in diode in a small outline package, suitable for surface mount technology.
HIGH RELIABILITY
30 V
.25 A
3 ohm
N-CHANNEL
AEC-Q101
MATTE TIN
SZNUD3105DMT1G
SZNUD3105DMT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 6V DS breakdown voltage, 0.5A ID, and 1.3 ohm RDS(on). Ideal for AEC-Q101 compliant automotive electronics.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
6 V
.5 A
1.3 ohm
NOT SPECIFIED
Matte Tin (Sn) - annealed
DMP58D0SV-7
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON;
50 V
.16 A
8 ohm
1.4 pF
R-PDSO-F6
-55 Cel
P-CHANNEL
.4 W
MIL-STD-202
FLAT
NUS3116MTR2G
NUS3116MTR2G by Onsemi is a P-CHANNEL FET for SWITCHING applications. Features include 12V DS Breakdown Voltage, 5.47A Drain Current, and 0.05 ohm On Resistance. With ENHANCEMENT MODE operation and 150 °C max temp, it's ideal for high-power switching circuits in compact designs.
SINGLE WITH BUILT-IN DIODE
12 V
5.47 A
4.4 A
.05 ohm
S-XBCC-N8
8
UNSPECIFIED
SQUARE
CHIP CARRIER
1.7 W
NO LEAD
BOTTOM
DMP57D5UFB-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .425 W; Maximum Drain-Source On Resistance: 6 ohm; Moisture Sensitivity Level (MSL): 1;
DRAIN
.2 A
6 ohm
R-PBCC-N3
e4
3
.425 W
NICKEL PALLADIUM GOLD
NTLUD3A260PZTAG
NTLUD3A260PZTAG by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Max Drain Current of 1.7A, Max Power Dissipation of 1.3W, and Max Operating Temperature of 150 °C. This small outline transistor has a square package and operates in ENHANCEMENT MODE for efficient performance.
1.7 A
1.3 A
.2 ohm
S-PDSO-N6
1.3 W
NTLUD3A260PZTBG
NTLUD3A260PZTBG by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Max Drain Current of 1.7A, Max Power Dissipation of 1.3W, and Max Operating Temperature of 150 °C. This small outline transistor has a Drain terminal connection and operates in ENHANCEMENT MODE.
NTF2955PT1G
NTF2955PT1G by Onsemi is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, 1.7A max drain current, and 0.185 ohm max on resistance. This enhancement mode transistor comes in a small outline package with gull wing terminals for surface mount assembly.
60 V
.185 ohm
TO-261AA
R-PDSO-G4
4
SI1034X-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SI1034X-T1-GE3 is a N-channel FET with 2 elements and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 20V, max drain current of 0.18A, and max power dissipation of 0.28W. This small outline transistor operates in enhancement mode at temperatures up to 150°C.
LOW THRESHOLD
.18 A
5 ohm
.28 W
FET General Purpose Powers
SI2303BDS-T1-GE3
SI2303BDS-T1-GE3 by Vishay Intertechnology is a P-channel FET with 30V DS breakdown voltage and 1.49A max drain current. Ideal for enhancement mode operation in applications requiring small outline, surface mount transistors with built-in diode, such as power management circuits.
1.49 A
TO-236
R-PDSO-G3
.9 W
SI3433BDV-T1-GE3
SI3433BDV-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 20V DS Breakdown Voltage, 4.3A Drain Current, and 0.042ohm On Resistance. Ideal for small signal applications in electronics due to its SINGLE configuration with built-in diode and ENHANCEMENT MODE operation. Package style is SMALL OUTLINE, suitable for surface mount designs in various electronic devices.
4.3 A
.042 ohm
2 W
PURE MATTE TIN
DMP2225L-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; Minimum DS Breakdown Voltage: 20 V; Transistor Application: SWITCHING;
2.6 A
.11 ohm
1.08 W
IRF7478QTRPBF
International Rectifier
IRF7478QTRPBF by International Rectifier is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It has a max ID of 7A and 0.026 ohm RDS(ON), operating in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C. Suitable for surface mount with GULL WING terminals, this transistor offers high performance in a SMALL OUTLINE package.
7 A
.026 ohm
37 pF
MS-012AA
R-PDSO-G8
2.5 W
FET General Purpose Power
DMN2215UDM-7
DMN2215UDM-7 by Diodes Inc. is a N-channel FET with 2 elements & built-in diode for switching applications. Features include 20V DS breakdown voltage, 2A max drain current, and 0.1 ohm max on resistance. Package style is small outline with Gull Wing terminals, operating up to 150°C.
2 A
.1 ohm
.65 W
Matte Tin (Sn)
SQ2361EES-T1-GE3
The Vishay Intertechnology SQ2361EES-T1-GE3 is a P-CHANNEL FET with 60V DS breakdown voltage and 2.5A max drain current. Ideal for small signal applications, it features a built-in diode, 0.15 ohm max on resistance, and operates in enhancement mode at up to 175°C.
2.5 A
.15 ohm
50 pF
175 Cel
40
2N7002DWL6327
Infineon Technologies
2N7002DWL6327 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.3A max drain current, and 3ohm on resistance. Ideal for switching applications, it features a small outline package, matte tin finish, and operates in enhancement mode at up to 150°C.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
.3 A
3 pF
.5 W
BSD840NL6327
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Terminal Form: GULL WING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.88 A
.4 ohm
BSS816NWL6327
BSS816NWL6327 by Infineon Technologies is a N-CHANNEL FET with 20V DS Breakdown Voltage and 1.4A Drain Current. Ideal for small outline applications, it operates in enhancement mode with 0.16 ohm On Resistance, making it suitable for various electronic devices requiring high performance in compact designs.
1.4 A
.16 ohm
10 pF
BSD235CL6327
Infineon's BSD235CL6327 is a Small Signal FET with N-Channel and P-Channel types. It features 2 elements with built-in diode, 0.95A max drain current, and 0.35 ohm max on-resistance. Ideal for applications requiring low power dissipation in small outline packages at up to 150°C operating temperature.
.95 A
.35 ohm
BSD235NL6327
Infineon's BSD235NL6327 is a N-CHANNEL FET with 2 elements, built-in diode, and 0.95A max drain current. Ideal for small outline applications requiring 0.35 ohm on-resistance and 20V breakdown voltage. Operates in enhancement mode at up to 150°C, making it suitable for various electronic devices.
BSS214NWL6327
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Package Style (Meter): SMALL OUTLINE; Qualification: Not Qualified;
1.5 A
.14 ohm
DMN66D0LW-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Minimum DS Breakdown Voltage: 60 V;
.115 A
.2 W
DMN4010LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.45 W; No. of Terminals: 5; Operating Mode: ENHANCEMENT MODE;
40 V
11.5 A
.012 ohm
S-PDSO-N5
5
2.45 W
MCH3376-TL-W
MCH3376-TL-W by Onsemi is a P-CHANNEL FET with 1.5A max drain current and 0.8W max power dissipation. Ideal for surface mount applications, it operates up to 150 °C and features metal-oxide semiconductor technology.
SINGLE
e6
.8 W
TIN BISMUTH
NTHD4401PT3G
NTHD4401PT3G by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. Features include 20V DS breakdown voltage, 0.155 ohm max drain-source resistance, and 2.1A max drain current. Its small outline package makes it suitable for surface mount designs.
2.1 A
.155 ohm
R-PDSO-C8
C BEND
2N7002E,215
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JEDEC-95 Code: TO-236AB; Additional Features: LOGIC LEVEL COMPATIBLE;
LOGIC LEVEL COMPATIBLE
.385 A
TO-236AB
-65 Cel
.83 W
2N7002F,215
2N7002F,215 by NXP Semiconductors is a N-CHANNEL FET with a 60V DS breakdown voltage and 0.475A drain current. It is used for switching applications in enhancement mode, featuring a built-in diode and 10pF feedback capacitance. Operating temperature ranges from -65 to 150 °C.
.475 A
2 ohm
BF861A,215
BF861A,215 by NXP Semiconductors is a small signal N-CHANNEL FET with 25V DS breakdown voltage. Ideal for amplifier applications, it operates in depletion mode and has a max power dissipation of 0.25W. With a peak reflow temperature of 260°C, this transistor features a junction technology and offers low feedback capacitance at 2.7pF.
LOW NOISE
25 V
JUNCTION
2.7 pF
DEPLETION MODE
.25 W
AMPLIFIER
BF861B,215
NXP Semiconductors BF861B,215 is a N-CHANNEL FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it features DEPLETION MODE operation and 2.7pF Crss feedback capacitance. This SMALL OUTLINE transistor has a max power dissipation of 0.25W and operates up to 150°C temperature.
BF861C,215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Peak Reflow Temperature (C): 260; JEDEC-95 Code: TO-236AB;
Tin (Sn)
BF862,215
BF862,215 by NXP Semiconductors is a small signal FET with N-channel configuration for amplifier applications. It features a min DS breakdown voltage of 20V and max drain current of 0.04A. With surface mount capability and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.
.04 A
.225 W
BFR30,215
NXP Semiconductors' BFR30,215 is a N-CHANNEL FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it features DEPLETION MODE operation and GULL WING terminals. With a max power dissipation of 0.3W and operating temperature up to 150°C, it offers reliable performance in small outline packages.
.01 A
1.5 pF
.3 W
BFR31,215
NXP Semiconductors' BFR31,215 is a N-CHANNEL FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it features DEPLETION MODE operation and GULL WING terminals. With a max power dissipation of 0.3W and operating temp up to 150°C, it's designed for small outline packages.
IEC-134
BFT46,215
BFT46,215 by NXP Semiconductors is a small signal N-CHANNEL FET transistor with a min DS breakdown voltage of 25V. It is commonly used as an amplifier in various applications. The transistor operates in depletion mode and has a max power dissipation of 0.25W at a max operating temperature of 150°C.
BSR56,215
NXP Semiconductors' BSR56,215 is a N-CHANNEL FET for SWITCHING applications. With 40V DS Breakdown Voltage and 0.3W Power Dissipation, it operates in DEPLETION MODE. Featuring GULL WING terminals and SILICON element material, it offers reliable performance up to 150°C.
.02 A
25 ohm
BSR57,215
NXP Semiconductors' BSR57,215 is a N-CHANNEL FET for SWITCHING applications. With 40V DS Breakdown Voltage and 40ohm RDS(on), it operates in DEPLETION MODE at 150°C. This SMALL OUTLINE transistor has GULL WING terminals and is ideal for high-temp environments requiring low power dissipation.
40 ohm
BSR58,215
NXP Semiconductors' BSR58,215 is a N-CHANNEL FET for SWITCHING applications. With a 40V DS Breakdown Voltage and 60 ohm On Resistance, it operates in DEPLETION MODE at up to 150°C. This SMALL OUTLINE transistor with GULL WING terminals is ideal for compact electronic devices requiring low power dissipation.
.005 A
60 ohm
BSS83,215
NXP Semiconductors' BSS83,215 is a N-CHANNEL FET with 10V DS Breakdown Voltage and 0.05A Drain Current. Ideal for SWITCHING applications, it features SINGLE configuration with built-in diode in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 0.23W at 125°C.
SUBSTRATE
10 V
.05 A
120 ohm
125 Cel
.23 W
PHT2NQ10T,135
Small Signal Field-Effect Transistors; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Case Connection: DRAIN; Terminal Position: DUAL;
.43 ohm
PMBF4391,215
NXP Semiconductors' PMBF4391,215 is a N-CHANNEL FET with 40V DS breakdown voltage. Ideal for switching applications, it features a single configuration with built-in diode and operates in depletion mode. With a max drain current of 0.012A and small outline package style, it offers fast turn on/off times of 80ns/20ns.
.012 A
30 ohm
3.5 pF
R-PDSO-F3
20 ns
80 ns
PMBF4392,215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JESD-609 Code: e3; Maximum Drain-Source On Resistance: 60 ohm;
.006 A
PMBF4393,215
NXP Semiconductors' PMBF4393,215 is a N-CHANNEL FET for SWITCHING applications. With a 40V DS Breakdown Voltage and 100 ohm On Resistance, it operates in DEPLETION MODE. This SMALL OUTLINE transistor has a max power dissipation of 0.25W and can handle up to 0.003A drain current.
.003 A
100 ohm
PMBFJ108,215
The NXP Semiconductors PMBFJ108,215 is a N-CHANNEL FET for SWITCHING applications. It features a 25V DS Breakdown Voltage, 8 ohm Drain-Source On Resistance, and 15pF Feedback Capacitance. With a DEPLETION MODE operation and GULL WING terminals, it offers reliable performance in small outline packages.
15 pF
PMBFJ109,215
NXP Semiconductors' PMBFJ109,215 is a N-CHANNEL FET for SWITCHING applications. With 25V DS Breakdown Voltage and 12 ohm Drain-Source On Resistance, it operates in DEPLETION MODE. This SMALL OUTLINE transistor has a max power dissipation of 0.25W at 150°C.
12 ohm
PMBFJ110,215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JESD-609 Code: e3; Maximum Feedback Capacitance (Crss): 15 pF;
18 ohm
PMBFJ111,215
PMBFJ111,215 by NXP Semiconductors is a small signal N-channel FET with a min DS breakdown voltage of 40V. It is used for switching applications and operates in depletion mode. With a max power dissipation of 0.3W and a max operating temperature of 150°C, it offers reliable performance in various electronic devices.
PMBFJ112,215
The NXP Semiconductors PMBFJ112,215 is a small signal N-CHANNEL FET for switching applications. It features a 40V DS breakdown voltage and 50 ohm max drain-source resistance. With a power dissipation of 0.3W and operating temperature up to 150°C, it is ideal for depletion mode operation in various electronic circuits.
50 ohm
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