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CSD25301W1015

Texas Instruments

CSD25301W1015 by Texas Instruments

CSD25301W1015 by Texas Instruments is a P-CHANNEL FET with 20V DS Breakdown Voltage and 2.2A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR package, suitable for surface mount assembly at temperatures up to 150°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 6,831 parts In-Stock

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Digiode

USA . 683 parts In-Stock

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Prism Electronics

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500

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Parana Technologies

USA . 1,964 parts In-Stock

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$0.328

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$1.558

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$0.328

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DigiPath Technology Company

USA . 1,351 parts In-Stock

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$0.361

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$0.332

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$0.361

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ChromeModa Solutions

Germany . 3,063 parts In-Stock

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$0.368

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$0.302

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IDEA Electronic Components Group

UK . 2,089 parts In-Stock

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$0.368

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$0.331

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Northwest PG Solutions

USA . 1,945 parts In-Stock

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$3.532

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AZTECH Wire

Italy . 502 parts In-Stock

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$5.010

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One Stop Electronics

USA . 1,566 parts In-Stock

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$51.050

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Component Stockers USA

USA . 229 parts In-Stock

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$99.990

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Kepictronics

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Lixinc

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Assy Fe

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Glotronic Ltd.

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A-Z Elektronik GmbH

Germany . 2,108 parts In-Stock

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Alle Elektronik GmbH

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Corphita

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Native Components

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Overview

Upgrade your electronics with the high-quality CSD25301W1015 by Texas Instruments. As a leader in semiconductor manufacturing, Texas Instruments delivers reliable products that excel in performance and durability. This P-channel small signal field effect transistor is perfect for switching applications, offering enhanced efficiency and power management. With a maximum drain current of 2.2A and a low drain-source on resistance of 0.22 ohm, this transistor provides exceptional value and benefits to customers seeking superior electronic components. Elevate your projects with the CSD25301W1015 and experience the difference of Texas Instruments technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring the product has a long lifespan.

Polarity or Channel Type: P-CHANNEL

Allows for efficient switching operations and control over the flow of current in the circuit.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode within the transistor package.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in these scenarios.

Surface Mount: YES

Facilitates easy and efficient installation on circuit boards, saving time and effort during assembly.

Minimum DS Breakdown Voltage: 20 V

Provides a sufficient safety margin for voltage spikes and fluctuations in the circuit.

Package Shape: RECTANGULAR

Allows for easy placement and alignment on the circuit board, optimizing space utilization.

Maximum Drain Current (Abs) (ID): 2.2 A

Can handle high current loads without overheating or damage, ensuring reliable performance under load.

Maximum Power Dissipation (Abs): 1.5 W

Efficiently dissipates heat generated during operation, preventing overheating and ensuring long-term reliability.

Package Style (Meter): GRID ARRAY

Provides a compact and efficient package design, suitable for high-density circuit board layouts.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high performance and reliability, making it suitable for various electronic applications.

Maximum Operating Temperature: 150 °C

Can operate reliably under high-temperature conditions, ensuring stable performance in harsh environments.

Transistor Element Material: SILICON

Known for its high conductivity and low energy loss, providing efficient operation and performance.

Terminal Finish: TIN SILVER COPPER

Ensures good electrical conductivity and resistance to corrosion, maintaining signal integrity over time.

Maximum Drain-Source On Resistance: 0.22 ohm

Low resistance helps in minimizing power loss and improving efficiency in switching operations.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperature for a significant duration, ensuring proper soldering and assembly.

Peak Reflow Temperature °C: 260

Can endure high reflow temperatures during assembly, ensuring reliable solder joints.

Maximum Feedback Capacitance (Crss): 40 pF

Low feedback capacitance helps in reducing signal distortion and improving overall circuit performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) CSD25301W1015 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

2.2 A

Maximum Drain Current (ID):

2.2 A

Maximum Drain-Source On Resistance:

.22 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

40 pF

JESD-30 Code:

R-PBGA-B6

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

CSD25301W1015 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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