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CSD23381F4T

Texas Instruments

CSD23381F4T by Texas Instruments

CSD23381F4T by Texas Instruments is a P-CHANNEL FET for SWITCHING applications. Features include 12V DS Breakdown Voltage, 2.3A Drain Current, and 0.3ohm On Resistance. With ENHANCEMENT MODE operation, it has a max temp of 150°C and -55°C min temp for various electronic devices.

Median Price

$0.577

Lifecycle Status

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1k+

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Arrow

USA . 17 parts In-Stock

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$0.067

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Texas Instruments

USA . 1,700 parts In-Stock

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$0.745

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$0.482

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$0.241

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$0.745

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DigiKey

USA . 3,252 parts In-Stock

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$1.430

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$0.597

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$1.430

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Mouser Electronics

USA . 771 parts In-Stock

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$1.430

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$0.516

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$0.394

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$0.365

771

$1.430

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$0.365

Verical

USA . 1,000 parts In-Stock

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$0.377

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$0.356

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Rochester

USA . 750 parts In-Stock

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$0.340

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$0.303

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$0.303

Chip1Stop

Japan . 17 parts In-Stock

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Digiode

USA . 2,195 parts In-Stock

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$0.225

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Vyrian

USA . 2,400 parts In-Stock

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Bristol Electronics

USA . 1,500 parts In-Stock

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Resion

USA . 1,440 parts In-Stock

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DigiKey Marketplace

USA . 1,000 parts In-Stock

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Native Components

USA . 509 parts In-Stock

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Northwest PG Solutions

USA . 1,790 parts In-Stock

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$0.169

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Corphita

USA . 3,994 parts In-Stock

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Component Stockers USA

USA . 5,511 parts In-Stock

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$0.260

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$0.290

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Parana Technologies

USA . 373 parts In-Stock

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$0.787

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$1.773

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DigiPath Technology Company

USA . 77 parts In-Stock

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$0.866

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$0.797

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ChromeModa Solutions

Germany . 2,580 parts In-Stock

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IDEA Electronic Components Group

UK . 1,251 parts In-Stock

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$0.796

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Lixinc

USA . 13,447 parts In-Stock

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Authorized Procurement Solutions

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Perfect Parts

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Formix International (Excess)

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Overview

Elevate your electronic designs with the CSD23381F4T by Texas Instruments. This small signal field-effect transistor offers unparalleled quality and reliability, thanks to the renowned manufacturer behind it. Ideal for switching applications, this P-channel transistor boasts a built-in diode and resistor for added convenience. With a maximum drain current of 2.3A and operating temperatures ranging from -55°C to 150°C, this transistor delivers exceptional performance in a compact package. Trust Texas Instruments to provide innovative solutions that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material ensures durability and protection for the transistor in various operating conditions.

Polarity or Channel Type: P-CHANNEL

P-channel transistors can offer lower ON-state resistance and higher power efficiency compared to N-channel transistors for certain applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design and reduce the need for additional components, making integration easier.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast switching speeds and efficient performance in high-frequency circuits.

Surface Mount: YES

Being surface mountable allows for easy and efficient mounting on PCBs, reducing assembly time and space requirements.

Minimum DS Breakdown Voltage: 12 V

With a minimum breakdown voltage of 12V, this transistor can withstand higher voltage levels, making it suitable for a wide range of applications.

Package Shape: RECTANGULAR

The rectangular package shape offers efficient use of space on the PCB and facilitates easier placement and mounting.

Terminal Form: BUTT

The butt terminal form provides a secure and reliable connection, ensuring stable performance under various operating conditions.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer better control over the switching operation and can be easily turned on or off, enhancing overall circuit efficiency.

Maximum Drain Current (Abs) (ID): 2.3 A

The high maximum drain current rating of 2.3A allows for handling larger loads and higher power levels in the circuit.

No. of Terminals: 3

With 3 terminals, this transistor offers versatile connectivity options and can be easily integrated into various circuit configurations.

Maximum Power Dissipation (Abs): 0.35 W

The low maximum power dissipation ensures efficient operation and helps in preventing overheating, increasing the reliability of the transistor.

Package Style (Meter): GRID ARRAY

The grid array package style provides multiple connection points, enabling enhanced thermal dissipation and improved electrical performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high input impedance, low power consumption, and fast response times, making it suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows for reliable operation in elevated temperature environments, increasing the versatility of the transistor.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability, high performance, and low cost, making them a popular choice for a wide range of applications.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55°C, this transistor can withstand harsh environmental conditions and ensure stability in extreme temperatures.

Terminal Finish: NICKEL GOLD

The nickel gold terminal finish provides excellent conductivity, corrosion resistance, and durability, ensuring long-term reliability in the circuit.

Maximum Drain-Source On Resistance: 0.3 ohm

The low drain-source on resistance of 0.3 ohms reduces power loss and improves efficiency in the circuit, especially in high-current applications.

Terminal Position: BOTTOM

The bottom terminal position allows for easy and secure mounting on the PCB, enhancing overall stability and reliability.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering and assembly of the transistor on the PCB, preventing damage and ensuring reliability.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C allows for efficient soldering and assembly processes, ensuring strong and reliable connections in the circuit.

Technical Specifications

Small Signal Field Effect Transistors (FET) CSD23381F4T attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Additional Features:

ULTRA LOW RESISTANCE

Minimum DS Breakdown Voltage:

12 V

Maximum Drain Current (Abs) (ID):

2.3 A

Maximum Drain Current (ID):

2.3 A

Maximum Drain-Source On Resistance:

.3 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PBGA-B3

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

NICKEL GOLD

Terminal Form:

BUTT

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

CSD23381F4T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.40

SB

8541.21.00.40

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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