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CSD25303W1015

Texas Instruments

CSD25303W1015 by Texas Instruments

CSD25303W1015 by Texas Instruments is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 3A, 0.092 ohm On Resistance, and 65pF Feedback Capacitance. This SINGLE configuration transistor operates in ENHANCEMENT MODE with a max power dissipation of 1.5W at 150°C.

Median Price

$0.302

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,390 parts In-Stock

1+ parts

$0.292

100+ parts

$0.275

1k+ parts

$0.249

10k+ parts

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4,390

$0.292

$0.275

$0.249

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Verical

USA . 4,390 parts In-Stock

1+ parts

-

100+ parts

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$0.311

4,390

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$0.311

Distributors (In-Stock)

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Digiode

USA . 1,662 parts In-Stock

1+ parts

$0.277

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1,662

$0.277

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Vyrian

USA . 2,942 parts In-Stock

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$0.292

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2,942

$0.292

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Cyclops Electronics Ltd

UK . 6,000 parts In-Stock

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DigiKey Marketplace

USA . 4,390 parts In-Stock

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Prism Electronics

USA . 2,998 parts In-Stock

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2,998

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Distributors (Availability)

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Corphita

USA . 1,267 parts In-Stock

1+ parts

$0.263

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1,267

$0.263

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Parana Technologies

USA . 2,202 parts In-Stock

1+ parts

$1.479

100+ parts

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$2.156

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2,202

$1.479

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$2.156

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DigiPath Technology Company

USA . 620 parts In-Stock

1+ parts

$1.629

100+ parts

$1.498

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620

$1.629

$1.498

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ChromeModa Solutions

Germany . 5,570 parts In-Stock

1+ parts

$1.662

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$1.363

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5,570

$1.662

$1.363

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IDEA Electronic Components Group

UK . 1,001 parts In-Stock

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$1.662

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$1.496

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1,001

$1.662

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Northwest PG Solutions

USA . 1,590 parts In-Stock

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$2.636

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$2.636

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

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1,800

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Alle Elektronik GmbH

Germany . 1,200 parts In-Stock

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Native Components

USA . 908 parts In-Stock

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$2.324

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$2.324

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Kepictronics

USA . 100 parts In-Stock

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100

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Overview

Enhance your electronic designs with the CSD25303W1015 by Texas Instruments! Manufactured with top-quality materials and advanced technology, this P-Channel Field Effect Transistor offers superb switching capabilities for a wide range of applications. With a compact package design and impressive performance features, this transistor is a valuable addition to any project. Trust Texas Instruments for reliable components that deliver efficiency and precision in every use. Elevate your designs with the CSD25303W1015 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where a positive voltage is required for operation.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode within the transistor package.

Transistor Application: SWITCHING

Ideal for use in switching applications due to its fast response times.

Surface Mount: YES

Enables easy installation on circuit boards, saving time during assembly.

Minimum DS Breakdown Voltage: 20 V

Provides a high level of voltage protection, making it suitable for various electronic devices.

Maximum Drain Current (Abs) (ID): 3 A

Capable of handling high currents, suitable for power applications.

Maximum Power Dissipation (Abs): 1.5 W

Efficient power handling capability, reducing the risk of overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Ensures reliable performance and low power consumption.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Maximum Drain-Source On Resistance: 0.092 ohm

Low on-resistance leads to reduced power loss and improved efficiency.

Maximum Feedback Capacitance (Crss): 65 pF

Low feedback capacitance minimizes signal distortion and improves overall performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) CSD25303W1015 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

3 A

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.092 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

65 pF

JESD-30 Code:

R-PBGA-B6

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

BALL

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

CSD25303W1015 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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