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CSD25304W1015T

Texas Instruments

CSD25304W1015T by Texas Instruments

CSD25304W1015T by Texas Instruments is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It operates in ENHANCEMENT MODE, with 3A ID and 0.092 ohm RDS(ON). With a temperature range of -55 to 150 °C, it features a built-in DIODE and 15.6pF Crss.

Median Price

$1.384

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 117,490 parts In-Stock

1+ parts

$0.959

100+ parts

$0.651

1k+ parts

$0.334

10k+ parts

-

117,490

$0.959

$0.651

$0.334

-

Mouser Electronics

USA . 422 parts In-Stock

1+ parts

$1.810

100+ parts

$0.626

1k+ parts

$0.537

10k+ parts

$0.478

422

$1.810

$0.626

$0.537

$0.478

DigiKey

USA . 1,457 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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1,457

-

-

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Distributors (In-Stock)

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Digiode

USA . 623 parts In-Stock

1+ parts

$0.911

100+ parts

-

1k+ parts

-

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623

$0.911

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Vyrian

USA . 1,122 parts In-Stock

1+ parts

$0.959

100+ parts

-

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1,122

$0.959

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 67 parts In-Stock

1+ parts

$0.489

100+ parts

-

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-

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67

$0.489

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Ampacity Inc.

Singapore . 39,612 parts In-Stock

1+ parts

$0.820

100+ parts

-

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-

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39,612

$0.820

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Semicontronic

India . 39,399 parts In-Stock

1+ parts

$0.820

100+ parts

$0.800

1k+ parts

$0.795

10k+ parts

-

39,399

$0.820

$0.800

$0.795

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Corphita

USA . 499 parts In-Stock

1+ parts

$0.863

100+ parts

-

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499

$0.863

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Parana Technologies

USA . 2,152 parts In-Stock

1+ parts

$1.220

100+ parts

-

1k+ parts

$2.008

10k+ parts

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2,152

$1.220

-

$2.008

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DigiPath Technology Company

USA . 653 parts In-Stock

1+ parts

$1.344

100+ parts

$1.236

1k+ parts

-

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653

$1.344

$1.236

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ChromeModa Solutions

Germany . 6,433 parts In-Stock

1+ parts

$1.371

100+ parts

$1.124

1k+ parts

-

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6,433

$1.371

$1.124

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IDEA Electronic Components Group

UK . 543 parts In-Stock

1+ parts

$1.371

100+ parts

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1k+ parts

$1.234

10k+ parts

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543

$1.371

-

$1.234

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Northwest PG Solutions

USA . 791 parts In-Stock

1+ parts

$3.188

100+ parts

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791

$3.188

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Perfect Parts

USA . 2,240 parts In-Stock

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2,240

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Native Components

USA . 803 parts In-Stock

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$2.812

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803

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$2.812

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Kepictronics

USA . 204 parts In-Stock

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204

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Overview

Discover the cutting-edge technology of the CSD25304W1015T by Texas Instruments, a high-quality P-CHANNEL Small Signal Field Effect Transistor designed for switching applications. With a single configuration and built-in diode, this transistor offers unparalleled performance and reliability. From its grid array package style to its metal-oxide semiconductor technology, this product is engineered with precision. Trust Texas Instruments to deliver superior products that exceed expectations. Experience the value and benefits of the CSD25304W1015T for your next project.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their high efficiency and low power consumption, making this product a good choice for applications where these qualities are important.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and can protect the transistor from reverse voltage and current, making this product suitable for applications where these features are necessary.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET can efficiently control the flow of current in electronic circuits, making it ideal for use in devices that require rapid on/off switching.

Surface Mount: YES

Surface mount technology allows for easy and compact placement of the transistor on a PCB, making it suitable for smaller electronic devices with limited space.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this FET can handle higher voltage levels, making it a good choice for applications where voltage spikes or fluctuations may occur.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient utilization of space on a PCB, making it easy to integrate this FET into a compact electronic design.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs have high input impedance and can be easily controlled with a low voltage signal, making this product suitable for applications where precise control over the current flow is required.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this FET can withstand high temperatures without compromising its performance, making it suitable for applications where heat dissipation is a concern.

No. of Terminals: 6

Having 6 terminals allows for more flexible connections and configurations in electronic circuits, making this FET versatile and suitable for a variety of applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high switching speeds and low power consumption, making this product energy-efficient and suitable for high-speed applications.

Maximum Drain Current (ID): 3 A

With a maximum drain current of 3A, this FET can handle higher currents without overheating or damage, making it suitable for applications that require a higher current capacity.

Maximum Drain-Source On Resistance: 0.092 ohm

The low drain-source on resistance of 0.092 ohm results in minimal power loss and heat generation, making this FET highly efficient and suitable for high-performance applications.

Maximum Feedback Capacitance (Crss): 15.6 pF

Low feedback capacitance helps reduce signal distortion and improve high-frequency performance, making this FET suitable for applications where signal integrity is critical.

Technical Specifications

Small Signal Field Effect Transistors (FET) CSD25304W1015T attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.092 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

15.6 pF

JESD-30 Code:

R-XBGA-B6

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

CSD25304W1015T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.40

SB

8541.21.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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