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CSD25484F4T

Texas Instruments

CSD25484F4T by Texas Instruments

CSD25484F4T by Texas Instruments is a P-CHANNEL FET for SWITCHING applications. Features include 20V DS Breakdown Voltage, 2.5A ID, and 0.18 ohm RDS(on). Operates in ENHANCEMENT MODE with -55 to 150 °C temperature range.

Median Price

$1.540

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 29,911 parts In-Stock

1+ parts

$0.758

100+ parts

$0.515

1k+ parts

$0.264

10k+ parts

-

29,911

$0.758

$0.515

$0.264

-

DigiKey

USA . 14,065 parts In-Stock

1+ parts

$1.540

100+ parts

$0.644

1k+ parts

-

10k+ parts

-

14,065

$1.540

$0.644

-

-

Mouser Electronics

USA . 2,964 parts In-Stock

1+ parts

$1.540

100+ parts

$0.558

1k+ parts

$0.428

10k+ parts

$0.392

2,964

$1.540

$0.558

$0.428

$0.392

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$0.371

100+ parts

-

1k+ parts

-

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15

$0.371

-

-

-

Digiode

USA . 387 parts In-Stock

1+ parts

$0.589

100+ parts

-

1k+ parts

-

10k+ parts

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387

$0.589

-

-

-

Vyrian

USA . 16,016 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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16,016

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.364

100+ parts

-

1k+ parts

$0.349

10k+ parts

-

2,000

$0.364

-

$0.349

-

Corohmni

South Africa . 42 parts In-Stock

1+ parts

$0.371

100+ parts

-

1k+ parts

-

10k+ parts

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42

$0.371

-

-

-

Argo Parts USA

USA . 2,835 parts In-Stock

1+ parts

$0.371

100+ parts

-

1k+ parts

-

10k+ parts

$0.360

2,835

$0.371

-

-

$0.360

Continental Prestige Electronics

USA . 1,374 parts In-Stock

1+ parts

$0.371

100+ parts

-

1k+ parts

-

10k+ parts

$0.364

1,374

$0.371

-

-

$0.364

Advanced Electronics

New Zealand . 10 parts In-Stock

1+ parts

$0.431

100+ parts

$0.396

1k+ parts

$0.371

10k+ parts

-

10

$0.431

$0.396

$0.371

-

Semicontronic

India . 16,369 parts In-Stock

1+ parts

$0.530

100+ parts

$0.517

1k+ parts

$0.514

10k+ parts

-

16,369

$0.530

$0.517

$0.514

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Ampacity Inc.

Singapore . 16,199 parts In-Stock

1+ parts

$0.530

100+ parts

-

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-

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16,199

$0.530

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Corphita

USA . 2,692 parts In-Stock

1+ parts

$0.558

100+ parts

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2,692

$0.558

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-

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Parana Technologies

USA . 134 parts In-Stock

1+ parts

$1.605

100+ parts

-

1k+ parts

$2.234

10k+ parts

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134

$1.605

-

$2.234

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DigiPath Technology Company

USA . 1,568 parts In-Stock

1+ parts

$1.767

100+ parts

$1.626

1k+ parts

-

10k+ parts

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1,568

$1.767

$1.626

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-

IDEA Electronic Components Group

UK . 1,033 parts In-Stock

1+ parts

$1.803

100+ parts

-

1k+ parts

$1.623

10k+ parts

-

1,033

$1.803

-

$1.623

-

ChromeModa Solutions

Germany . 534 parts In-Stock

1+ parts

$1.803

100+ parts

$1.478

1k+ parts

-

10k+ parts

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534

$1.803

$1.478

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-

Lixinc

USA . 11,143 parts In-Stock

1+ parts

-

100+ parts

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11,143

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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2,000

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Overview

Enhance your electronic projects with the CSD25484F4T by Texas Instruments, a top-quality P-CHANNEL field effect transistor. Designed for switching applications, this single-component solution comes with a built-in diode and resistor, saving you time and space on your PCB. With a minimum DS breakdown voltage of 20V and a maximum drain current of 2.5A, this chip carrier package offers excellent performance in a compact size. Trust in Texas Instruments' reputation for reliability and innovation, and unlock new possibilities for your designs with the CSD25484F4T.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors are known for their low ON-state resistance and high switching speed, making them ideal for high efficiency applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor help simplify circuit design and reduce component count, saving space and cost.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Surface mount package allows for easy and compact integration on PCBs, saving valuable board space.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand harsh operating conditions without degrading performance.

Maximum Drain Current (ID): 2.5 A

Capable of handling a high drain current, making it suitable for high-power applications.

Maximum Drain-Source On Resistance: 0.18 ohm

Low ON-resistance leads to efficient power handling and reduced heat dissipation in the transistor.

Maximum Feedback Capacitance (Crss): 7.2 pF

Low feedback capacitance ensures stable high-frequency operation and reduced chances of signal distortion.

Technical Specifications

Small Signal Field Effect Transistors (FET) CSD25484F4T attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

2.5 A

Maximum Drain-Source On Resistance:

.18 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

7.2 pF

JESD-30 Code:

R-XBCC-N3

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

NICKEL GOLD

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

CSD25484F4T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.40

SB

8541.21.00.40

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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