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CSD25484F4

Texas Instruments

CSD25484F4 by Texas Instruments

CSD25484F4 by Texas Instruments is a P-CHANNEL FET for switching applications. Features include 20V DS breakdown voltage, 2.5A ID, and 0.18 ohm RDS(on). Ideal for enhancement mode operation in surface mount designs with a max operating temperature of 150°C.

Median Price

$0.170

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 486,457 parts In-Stock

1+ parts

$0.152

100+ parts

$0.103

1k+ parts

$0.053

10k+ parts

-

486,457

$0.152

$0.103

$0.053

-

Arrow

USA . 1,237 parts In-Stock

1+ parts

$0.189

100+ parts

$0.073

1k+ parts

$0.036

10k+ parts

-

1,237

$0.189

$0.073

$0.036

-

Mouser Electronics

USA . 5,909 parts In-Stock

1+ parts

$0.460

100+ parts

$0.178

1k+ parts

$0.118

10k+ parts

$0.076

5,909

$0.460

$0.178

$0.118

$0.076

DigiKey

USA . 7,068 parts In-Stock

1+ parts

$0.490

100+ parts

$0.189

1k+ parts

$0.126

10k+ parts

-

7,068

$0.490

$0.189

$0.126

-

Chip1Stop

Japan . 2,900 parts In-Stock

1+ parts

-

100+ parts

$0.067

1k+ parts

$0.065

10k+ parts

-

2,900

-

$0.067

$0.065

-

Verical

USA . 1,237 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.036

10k+ parts

-

1,237

-

-

$0.036

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 600 parts In-Stock

1+ parts

$0.113

100+ parts

-

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-

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600

$0.113

-

-

-

Digiode

USA . 1,516 parts In-Stock

1+ parts

$0.144

100+ parts

-

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-

10k+ parts

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1,516

$0.144

-

-

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Vyrian

USA . 87,042 parts In-Stock

1+ parts

-

100+ parts

-

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87,042

-

-

-

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Distributors (Availability)

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Ampacity Inc.

Singapore . 86,910 parts In-Stock

1+ parts

$0.049

100+ parts

-

1k+ parts

-

10k+ parts

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86,910

$0.049

-

-

-

Continental Prestige Electronics

USA . 6,488 parts In-Stock

1+ parts

$0.113

100+ parts

-

1k+ parts

-

10k+ parts

$0.111

6,488

$0.113

-

-

$0.111

Argo Parts USA

USA . 930 parts In-Stock

1+ parts

$0.113

100+ parts

-

1k+ parts

-

10k+ parts

$0.110

930

$0.113

-

-

$0.110

Corphita

USA . 620 parts In-Stock

1+ parts

$0.137

100+ parts

-

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620

$0.137

-

-

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Advanced Electronics

New Zealand . 69 parts In-Stock

1+ parts

$0.145

100+ parts

$0.134

1k+ parts

$0.125

10k+ parts

-

69

$0.145

$0.134

$0.125

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Corohmni

South Africa . 930 parts In-Stock

1+ parts

$0.642

100+ parts

-

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930

$0.642

-

-

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Parana Technologies

USA . 2,259 parts In-Stock

1+ parts

$1.005

100+ parts

-

1k+ parts

$1.885

10k+ parts

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2,259

$1.005

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$1.885

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DigiPath Technology Company

USA . 424 parts In-Stock

1+ parts

$1.106

100+ parts

$1.018

1k+ parts

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424

$1.106

$1.018

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ChromeModa Solutions

Germany . 3,657 parts In-Stock

1+ parts

$1.129

100+ parts

$0.926

1k+ parts

-

10k+ parts

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3,657

$1.129

$0.926

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IDEA Electronic Components Group

UK . 1,595 parts In-Stock

1+ parts

$1.129

100+ parts

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1k+ parts

$1.016

10k+ parts

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1,595

$1.129

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$1.016

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Lixinc

USA . 16,080 parts In-Stock

1+ parts

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16,080

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A-Z Elektronik GmbH

Germany . 6,234 parts In-Stock

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6,234

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Kepictronics

USA . 6,000 parts In-Stock

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6,000

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Benley Electronics

USA . 2,200 parts In-Stock

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2,200

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Netroflash

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$0.111

1k+ parts

$0.108

10k+ parts

$0.105

100

-

$0.111

$0.108

$0.105

Overview

Experience top-notch quality and reliability with the CSD25484F4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers cutting-edge Small Signal Field Effect Transistors that are ideal for switching applications. The CSD25484F4 offers customers unmatched value with its built-in diode and resistor, enhancing performance and simplifying design. Trust Texas Instruments to provide innovative solutions that meet your needs and exceed your expectations.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel FETs typically have lower on-resistance and higher current-carrying capacity, making them suitable for switching applications.

Minimum DS Breakdown Voltage: 20 V

Provides a safe operating margin for the transistor in various voltage applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into circuit boards and compact designs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer easy control of the flow of current, making them ideal for switching applications.

Maximum Drain Current (ID): 2.5 A

High maximum drain current allows for handling larger loads in switching applications.

Maximum Drain-Source On Resistance: 0.18 ohm

Low on-resistance results in minimal power loss and efficient switching performance.

Maximum Operating Temperature: 150 °C

Wide operating temperature range makes this transistor suitable for various environmental conditions.

Technical Specifications

Small Signal Field Effect Transistors (FET) CSD25484F4 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

2.5 A

Maximum Drain-Source On Resistance:

.18 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

7.2 pF

JESD-30 Code:

R-XBCC-N3

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

NICKEL GOLD

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

CSD25484F4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.40

SB

8541.21.00.40

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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