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CSD25501F3T

Texas Instruments

CSD25501F3T by Texas Instruments

CSD25501F3T by Texas Instruments is a P-CHANNEL FET for SWITCHING applications. Features include 20V DS Breakdown Voltage, 3.6A Drain Current, and 0.125 ohm On Resistance. With a package style of GRID ARRAY, it operates b/w -55 to 150 °C and has a built-in diode and resistor for enhanced performance.

Median Price

$0.386

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 241 parts In-Stock

1+ parts

$0.794

100+ parts

$0.514

1k+ parts

$0.257

10k+ parts

-

241

$0.794

$0.514

$0.257

-

DigiKey

USA . 11,675 parts In-Stock

1+ parts

$1.500

100+ parts

$0.627

1k+ parts

-

10k+ parts

-

11,675

$1.500

$0.627

-

-

Mouser Electronics

USA . 2,667 parts In-Stock

1+ parts

$1.500

100+ parts

$0.543

1k+ parts

$0.415

10k+ parts

$0.387

2,667

$1.500

$0.543

$0.415

$0.387

RS (Exports)

UK . 1,460 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.445

10k+ parts

$0.429

1,460

-

-

$0.445

$0.429

Arrow

USA . 750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.314

10k+ parts

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750

-

-

$0.314

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Chip1Stop

Japan . 169 parts In-Stock

1+ parts

-

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$0.326

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-

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169

-

$0.326

-

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Verical

USA . 134 parts In-Stock

1+ parts

-

100+ parts

$0.070

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-

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134

-

$0.070

-

-

Farnell

UK . 15 parts In-Stock

1+ parts

-

100+ parts

$0.115

1k+ parts

$0.088

10k+ parts

-

15

-

$0.115

$0.088

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 29 parts In-Stock

1+ parts

$0.454

100+ parts

-

1k+ parts

-

10k+ parts

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29

$0.454

-

-

-

Digiode

USA . 3,066 parts In-Stock

1+ parts

$0.712

100+ parts

-

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-

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3,066

$0.712

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-

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Sensible Micro Corp

USA . 18,000 parts In-Stock

1+ parts

-

100+ parts

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18,000

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Bristol Electronics

USA . 2,286 parts In-Stock

1+ parts

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2,286

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Vyrian

USA . 2,164 parts In-Stock

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2,164

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,355 parts In-Stock

1+ parts

$0.103

100+ parts

-

1k+ parts

-

10k+ parts

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2,355

$0.103

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-

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Continental Prestige Electronics

USA . 3,796 parts In-Stock

1+ parts

$0.454

100+ parts

-

1k+ parts

-

10k+ parts

$0.445

3,796

$0.454

-

-

$0.445

Argo Parts USA

USA . 2,553 parts In-Stock

1+ parts

$0.454

100+ parts

-

1k+ parts

-

10k+ parts

$0.441

2,553

$0.454

-

-

$0.441

Corphita

USA . 1,561 parts In-Stock

1+ parts

$0.675

100+ parts

-

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1,561

$0.675

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Corohmni

South Africa . 1,115 parts In-Stock

1+ parts

$0.738

100+ parts

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1,115

$0.738

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Parana Technologies

USA . 731 parts In-Stock

1+ parts

$1.737

100+ parts

-

1k+ parts

$2.316

10k+ parts

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731

$1.737

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$2.316

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DigiPath Technology Company

USA . 1,385 parts In-Stock

1+ parts

$1.913

100+ parts

$1.760

1k+ parts

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10k+ parts

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1,385

$1.913

$1.760

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ChromeModa Solutions

Germany . 6,154 parts In-Stock

1+ parts

$1.952

100+ parts

$1.601

1k+ parts

-

10k+ parts

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6,154

$1.952

$1.601

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IDEA Electronic Components Group

UK . 472 parts In-Stock

1+ parts

$1.952

100+ parts

-

1k+ parts

$1.757

10k+ parts

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472

$1.952

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$1.757

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QUARKTWIN TECHNOLOGY LTD

USA . 28,665 parts In-Stock

1+ parts

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28,665

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Lixinc

USA . 5,789 parts In-Stock

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5,789

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Netroflash

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$0.445

1k+ parts

$0.432

10k+ parts

$0.422

100

-

$0.445

$0.432

$0.422

Overview

Elevate your electronic projects with the CSD25501F3T by Texas Instruments, a top-quality P-Channel small signal field effect transistor that offers unmatched performance and reliability. With a single configuration featuring a built-in diode and resistor, this transistor is perfect for switching applications. Its compact rectangular package and surface mount capability make it easy to integrate into your designs. Trust Texas Instruments, a renowned manufacturer known for its cutting-edge technology, to deliver a product that exceeds expectations. Upgrade your circuits today with the CSD25501F3T and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: P-CHANNEL

Allows for efficient switching and control of current flow.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Simplified design with built-in components for easier integration into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance.

Surface Mount: YES

Easy to mount on PCBs, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 20 V

Can handle voltage levels up to 20V, suitable for various applications.

Maximum Drain Current (Abs) (ID): 3.6 A

Capable of handling high drain currents, ideal for applications requiring high power.

Maximum Power Dissipation (Abs): 0.5 W

Efficient power handling capability, preventing overheating and ensuring reliability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Reliable technology known for its high performance and efficiency.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures, making it suitable for a wide range of environments.

Minimum Operating Temperature: -55 °C

Can operate in low-temperature conditions, expanding its usability.

Maximum Drain-Source On Resistance: 0.125 ohm

Low on-resistance for efficient current flow and minimal power loss.

Technical Specifications

Small Signal Field Effect Transistors (FET) CSD25501F3T attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

3.6 A

Maximum Drain Current (ID):

3.6 A

Maximum Drain-Source On Resistance:

.125 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5.3 pF

JESD-30 Code:

R-PBGA-B3

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

NICKEL GOLD

Terminal Form:

BUTT

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

CSD25501F3T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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