Loading...

CSD23203WT

Texas Instruments

CSD23203WT by Texas Instruments

CSD23203WT by Texas Instruments is a P-CHANNEL FET with 8V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 3A and 0.053 ohm RDS(ON), operating b/w -55 to 150 °C. This SINGLE transistor in GRID ARRAY package has METAL-OXIDE SEMICONDUCTOR technology and 172pF Crss.

Median Price

$0.544

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 169 parts In-Stock

1+ parts

$0.053

100+ parts

$0.050

1k+ parts

-

10k+ parts

-

169

$0.053

$0.050

-

-

Texas Instruments

USA . 1,565 parts In-Stock

1+ parts

$0.924

100+ parts

$0.628

1k+ parts

$0.322

10k+ parts

-

1,565

$0.924

$0.628

$0.322

-

DigiKey

USA . 37,581 parts In-Stock

1+ parts

$1.650

100+ parts

$0.699

1k+ parts

$0.522

10k+ parts

$0.410

37,581

$1.650

$0.699

$0.522

$0.410

Mouser Electronics

USA . 250 parts In-Stock

1+ parts

$1.770

100+ parts

$0.650

1k+ parts

$0.502

10k+ parts

$0.460

250

$1.770

$0.650

$0.502

$0.460

Verical

USA . 169 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.050

10k+ parts

-

169

-

-

$0.050

-

Chip1Stop

Japan . 169 parts In-Stock

1+ parts

-

100+ parts

$0.164

1k+ parts

-

10k+ parts

-

169

-

$0.164

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,987 parts In-Stock

1+ parts

$0.134

100+ parts

-

1k+ parts

-

10k+ parts

-

1,987

$0.134

-

-

-

Vyrian

USA . 1,998 parts In-Stock

1+ parts

$0.136

100+ parts

-

1k+ parts

-

10k+ parts

-

1,998

$0.136

-

-

-

Bristol Electronics

USA . 250 parts In-Stock

1+ parts

$1.350

100+ parts

$0.499

1k+ parts

$0.432

10k+ parts

-

250

$1.350

$0.499

$0.432

-

ACDS - Activité Composants Distribution Service

France . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Dan-Mar Components

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,196 parts In-Stock

1+ parts

$0.127

100+ parts

-

1k+ parts

-

10k+ parts

-

1,196

$0.127

-

-

-

Parana Technologies

USA . 725 parts In-Stock

1+ parts

$0.536

100+ parts

-

1k+ parts

$1.644

10k+ parts

-

725

$0.536

-

$1.644

-

DigiPath Technology Company

USA . 1,655 parts In-Stock

1+ parts

$0.590

100+ parts

$0.543

1k+ parts

-

10k+ parts

-

1,655

$0.590

$0.543

-

-

ChromeModa Solutions

Germany . 4,976 parts In-Stock

1+ parts

$0.602

100+ parts

$0.494

1k+ parts

-

10k+ parts

-

4,976

$0.602

$0.494

-

-

IDEA Electronic Components Group

UK . 185 parts In-Stock

1+ parts

$0.602

100+ parts

-

1k+ parts

$0.542

10k+ parts

-

185

$0.602

-

$0.542

-

Northwest PG Solutions

USA . 2,167 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,167

-

-

-

-

Native Components

USA . 585 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

585

-

-

-

-

Overview

Unleash the power of precision with the CSD23203WT by Texas Instruments, a cutting-edge P-Channel small signal Field Effect Transistor designed for high-performance switching applications. With a robust single configuration featuring a built-in diode, this transistor offers unparalleled reliability and efficiency. Its state-of-the-art metal-oxide semiconductor technology ensures seamless operation in diverse environments, while the temperature range of -55 to 150°C guarantees optimal performance. Elevate your projects with the quality and innovation that only Texas Instruments can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and reliable material for long-term use.

Polarity or Channel Type: P-CHANNEL

Efficient for certain types of circuit designs and applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient design with added functionality for specific circuit requirements.

Transistor Application: SWITCHING

Specifically designed for switching applications for optimal performance.

Surface Mount: YES

Easily mountable on PCBs, saving space and facilitating assembly.

Minimum DS Breakdown Voltage: 8 V

Provides protection against excess voltage, ensuring durability.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Maximum Drain Current (ID): 3 A

Capable of handling high current levels for various applications.

Maximum Drain-Source On Resistance: 0.053 ohm

Low resistance for efficient power transfer and minimal heat generation.

Maximum Feedback Capacitance (Crss): 172 pF

Optimal capacitance for stable operation in switching circuits.

Technical Specifications

Small Signal Field Effect Transistors (FET) CSD23203WT attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Minimum DS Breakdown Voltage:

8 V

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.053 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

172 pF

JESD-30 Code:

R-PBGA-B6

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

CSD23203WT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.40

SB

8541.21.00.40

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

New products
from Texas Instruments 7

Similar products 19