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CSD25480F3

Texas Instruments

CSD25480F3 by Texas Instruments

CSD25480F3 by Texas Instruments is a P-CHANNEL FET for SWITCHING applications. It features 20V DS Breakdown Voltage, 1.7A Drain Current, and 0.26 ohm On Resistance. With ENHANCEMENT MODE operation and METAL-OXIDE SEMICONDUCTOR technology, it operates b/w -55 to 150 °C, making it ideal for various electronic devices.

Median Price

$0.360

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 23,312 parts In-Stock

1+ parts

$0.108

100+ parts

$0.070

1k+ parts

$0.035

10k+ parts

-

23,312

$0.108

$0.070

$0.035

-

DigiKey

USA . 45,866 parts In-Stock

1+ parts

$0.360

100+ parts

$0.139

1k+ parts

$0.091

10k+ parts

-

45,866

$0.360

$0.139

$0.091

-

Mouser Electronics

USA . 293 parts In-Stock

1+ parts

$0.360

100+ parts

$0.139

1k+ parts

$0.091

10k+ parts

$0.058

293

$0.360

$0.139

$0.091

$0.058

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,686 parts In-Stock

1+ parts

$0.103

100+ parts

-

1k+ parts

-

10k+ parts

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4,686

$0.103

-

-

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Vyrian

USA . 1,858 parts In-Stock

1+ parts

$0.108

100+ parts

-

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-

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1,858

$0.108

-

-

-

Cyclops Electronics Ltd

UK . 232 parts In-Stock

1+ parts

-

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232

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,211 parts In-Stock

1+ parts

$0.097

100+ parts

-

1k+ parts

-

10k+ parts

-

2,211

$0.097

-

-

-

Parana Technologies

USA . 1,404 parts In-Stock

1+ parts

$0.795

100+ parts

-

1k+ parts

$1.778

10k+ parts

-

1,404

$0.795

-

$1.778

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DigiPath Technology Company

USA . 1,421 parts In-Stock

1+ parts

$0.875

100+ parts

$0.805

1k+ parts

-

10k+ parts

-

1,421

$0.875

$0.805

-

-

ChromeModa Solutions

Germany . 1,140 parts In-Stock

1+ parts

$0.893

100+ parts

$0.732

1k+ parts

-

10k+ parts

-

1,140

$0.893

$0.732

-

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IDEA Electronic Components Group

UK . 751 parts In-Stock

1+ parts

$0.893

100+ parts

-

1k+ parts

$0.804

10k+ parts

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751

$0.893

-

$0.804

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Native Components

USA . 322 parts In-Stock

1+ parts

$5.890

100+ parts

-

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322

$5.890

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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25,000

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Lixinc

USA . 12,432 parts In-Stock

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12,432

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Perfect Parts

USA . 7,700 parts In-Stock

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7,700

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A-Z Elektronik GmbH

Germany . 5,400 parts In-Stock

1+ parts

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5,400

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iodParts Technologies Inc.

India . 5,285 parts In-Stock

1+ parts

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5,285

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-

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Speed Components Ltd (Excess)

Israel . 900 parts In-Stock

1+ parts

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900

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Northwest PG Solutions

USA . 772 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$5.772

10k+ parts

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772

-

-

$5.772

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Overview

Upgrade your electronics with the CSD25480F3 from Texas Instruments. This small signal Field Effect Transistor offers high-quality performance and reliability in a compact package. Perfect for switching applications, this P-Channel transistor features a built-in diode and resistor for added convenience. With a maximum drain current of 1.7 A and an operating temperature range from -55°C to 150°C, this transistor is versatile and durable. Trust Texas Instruments for cutting-edge technology and superior products that deliver value and efficiency to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and thermal conductivity, making the product reliable for long-term use.

Surface Mount: YES

Facilitates easy installation on PCBs, saving space and reducing assembly time.

Nominal Supply Voltage (Vsup): 10 V

Suitable for a wide range of applications requiring a stable 10V input voltage.

Maximum Operating Temperature: 85 °C

Able to operate effectively in high-temperature environments, ensuring product performance in various conditions.

Minimum Operating Temperature: -40 °C

Capable of functioning in low-temperature conditions, making it versatile for different operating environments.

Maximum Output Current: 1 A

Capable of delivering a high output current, making it suitable for applications that require sufficient power delivery.

Maximum Switching Frequency: 1000 kHz

High switching frequency allows for efficient power conversion and regulation, leading to better performance and energy efficiency.

Control Technique: PULSE WIDTH MODULATION

PWM control technique offers precise control over the output voltage, ensuring stable and accurate power regulation.

Technical Specifications

Small Signal Field Effect Transistors (FET) CSD25480F3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

1.7 A

Maximum Drain-Source On Resistance:

.26 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

4.7 pF

JESD-30 Code:

R-PBGA-B3

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

NICKEL GOLD

Terminal Form:

BUTT

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

CSD25480F3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.40

SB

8541.21.00.40

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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