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CSD25202W15T

Texas Instruments

CSD25202W15T by Texas Instruments

CSD25202W15T by Texas Instruments is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a built-in DIODE and RESISTOR, operates in ENHANCEMENT MODE, and has a max ID of 4A. With a low 0.052 ohm RDS(on), it can handle temperatures from -55 to 150 °C, making it suitable for various electronic devices.

Median Price

$0.714

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 53,000 parts In-Stock

1+ parts

$1.056

100+ parts

$0.718

1k+ parts

$0.368

10k+ parts

-

53,000

$1.056

$0.718

$0.368

-

Rochester

USA . 4,750 parts In-Stock

1+ parts

-

100+ parts

$0.625

1k+ parts

$0.519

10k+ parts

$0.462

4,750

-

$0.625

$0.519

$0.462

DigiKey

USA . 4,750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.780

10k+ parts

-

4,750

-

-

$0.780

-

Verical

USA . 4,750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.648

10k+ parts

-

4,750

-

-

$0.648

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,708 parts In-Stock

1+ parts

$0.485

100+ parts

-

1k+ parts

-

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3,708

$0.485

-

-

-

Nova Conductors

Japan . 750 parts In-Stock

1+ parts

$0.506

100+ parts

-

1k+ parts

-

10k+ parts

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750

$0.506

-

-

-

Vyrian

USA . 16,403 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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16,403

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 16,889 parts In-Stock

1+ parts

$0.434

100+ parts

$0.423

1k+ parts

$0.421

10k+ parts

-

16,889

$0.434

$0.423

$0.421

-

Ampacity Inc.

Singapore . 16,212 parts In-Stock

1+ parts

$0.434

100+ parts

-

1k+ parts

-

10k+ parts

-

16,212

$0.434

-

-

-

Corphita

USA . 2,520 parts In-Stock

1+ parts

$0.460

100+ parts

-

1k+ parts

-

10k+ parts

-

2,520

$0.460

-

-

-

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.506

100+ parts

-

1k+ parts

$0.481

10k+ parts

$0.470

100

$0.506

-

$0.481

$0.470

Corohmni

South Africa . 914 parts In-Stock

1+ parts

$0.557

100+ parts

-

1k+ parts

-

10k+ parts

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914

$0.557

-

-

-

Parana Technologies

USA . 7 parts In-Stock

1+ parts

$1.504

100+ parts

-

1k+ parts

$2.172

10k+ parts

-

7

$1.504

-

$2.172

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DigiPath Technology Company

USA . 1,645 parts In-Stock

1+ parts

$1.656

100+ parts

$1.524

1k+ parts

-

10k+ parts

-

1,645

$1.656

$1.524

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-

ChromeModa Solutions

Germany . 2,204 parts In-Stock

1+ parts

$1.690

100+ parts

$1.386

1k+ parts

-

10k+ parts

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2,204

$1.690

$1.386

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IDEA Electronic Components Group

UK . 1,992 parts In-Stock

1+ parts

$1.690

100+ parts

-

1k+ parts

$1.521

10k+ parts

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1,992

$1.690

-

$1.521

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Continental Prestige Electronics

USA . 5,886 parts In-Stock

1+ parts

-

100+ parts

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5,886

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Argo Parts USA

USA . 4,802 parts In-Stock

1+ parts

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4,802

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Perfect Parts

USA . 168 parts In-Stock

1+ parts

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100+ parts

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168

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Overview

Unlock the power of innovation with the CSD25202W15T by Texas Instruments, a high-quality P-channel Field Effect Transistor designed for switching applications. With a built-in diode and resistor, this versatile component offers reliability and efficiency in a compact, surface-mount package. Whether you're building a new circuit or upgrading an existing one, this enhancement-mode transistor delivers exceptional performance at temperatures ranging from -55°C to 150°C. Trust Texas Instruments for cutting-edge technology and trust the CSD25202W15T to elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

Suitable for applications requiring P-channel transistors, offering versatility in circuit design.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design and saves space by integrating components into one package.

Transistor Application: SWITCHING

Ideal for switching applications, offering fast and efficient performance.

Surface Mount: YES

Facilitates easy and efficient PCB assembly, saving time and effort.

Minimum DS Breakdown Voltage: 20 V

Suitable for low voltage applications, providing reliable operation within the specified range.

Maximum Drain Current (ID): 4 A

Capable of handling high current levels, making it suitable for demanding applications.

Maximum Drain-Source On Resistance: 0.052 ohm

Low on-resistance ensures minimal power loss and high efficiency in operation.

Maximum Feedback Capacitance (Crss): 27 pF

Low feedback capacitance helps in reducing signal distortion and ensuring high-frequency performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) CSD25202W15T attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

4 A

Maximum Drain-Source On Resistance:

.052 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

27 pF

JESD-30 Code:

S-PBGA-B9

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

9

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

CSD25202W15T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.40

SB

8541.21.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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