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SI6544BDQ-T1-E3

Vishay Intertechnology

SI6544BDQ-T1-E3 by Vishay Intertechnology

Vishay Intertechnology's SI6544BDQ-T1-E3 is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Features include 30V DS breakdown voltage, 0.032 ohm RDS(on), and 3.7A ID max current. Ideal for applications requiring high efficiency in compact designs like power management systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 7,253 parts In-Stock

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Chip Stock

USA . 4,489 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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AZTECH Wire

Italy . 512 parts In-Stock

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$8.045

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512

$8.045

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Ampacity Inc.

Singapore . 786 parts In-Stock

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$41.050

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$41.050

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RC Electronics

USA . 58,232 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Kepictronics

USA . 968 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Overview

Enhance your electronic designs with the SI6544BDQ-T1-E3 Small Signal Field Effect Transistor by Vishay Intertechnology. With a reputation for superior quality and reliability, Vishay delivers cutting-edge technology in this N-Channel and P-Channel transistor. Ideal for a wide range of applications, this transistor offers enhanced performance and efficiency. Experience the benefits of seamless integration, high durability, and exceptional value with the SI6544BDQ-T1-E3. Upgrade your projects today with Vishay Intertechnology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product long-lasting and reliable.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Offers versatility in circuit design by supporting both N-channel and P-channel applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Allows for more complex circuit designs with built-in diode functionality, enhancing efficiency.

Surface Mount: YES

Enables easy and efficient installation onto circuit boards, saving time and effort.

Minimum DS Breakdown Voltage: 30 V

Ensures reliable performance under various voltage conditions, safeguarding against electrical failures.

Package Shape: RECTANGULAR

Facilitates a compact and space-efficient design, ideal for small electronic devices.

Operating Mode: ENHANCEMENT MODE

Allows for precision control over the transistor operation, improving overall circuit performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides enhanced conductivity and efficiency, optimizing the transistor's performance.

Maximum Operating Temperature: 150 °C

Ensures stable operation even at high temperatures, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Offers high reliability and performance, ensuring consistent operation over time.

Terminal Finish: MATTE TIN

Promotes strong and stable connections, reducing the risk of signal transmission issues.

Maximum Drain Current (ID): 3.7 A

Supports high current flow, making it suitable for applications that require a substantial power output.

Maximum Drain-Source On Resistance: 0.032 ohm

Provides low resistance for efficient conduction, minimizing power losses and improving overall efficiency.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI6544BDQ-T1-E3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

3.7 A

Maximum Drain-Source On Resistance:

.032 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

20

Transistor Element Material:

SILICON

Trade Compliance

SI6544BDQ-T1-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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