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SI6562CDQ-T1-GE3

Vishay Intertechnology

SI6562CDQ-T1-GE3 by Vishay Intertechnology

Vishay Intertechnology's SI6562CDQ-T1-GE3 is a Small Signal FET with N/P-channel, 2 elements & built-in diode for switching applications. Features include 20V DS breakdown voltage, 6.7A max drain current, and 0.022ohm max on-resistance. Ideal for compact designs requiring high power dissipation in a small outline package.

Median Price

$0.838

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

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Arrow

USA . 13 parts In-Stock

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$0.748

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13

$0.748

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Farnell

UK . 17,258 parts In-Stock

1+ parts

$0.876

100+ parts

$0.473

1k+ parts

$0.376

10k+ parts

$0.368

17,258

$0.876

$0.473

$0.376

$0.368

Element14

Singapore . 17,924 parts In-Stock

1+ parts

$1.036

100+ parts

$0.663

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$0.613

10k+ parts

$0.594

17,924

$1.036

$0.663

$0.613

$0.594

Newark

USA . 89 parts In-Stock

1+ parts

$1.160

100+ parts

$0.547

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$0.448

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89

$1.160

$0.547

$0.448

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Mouser Electronics

USA . 18,984 parts In-Stock

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$1.490

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$0.653

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$0.468

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$0.423

18,984

$1.490

$0.653

$0.468

$0.423

DigiKey

USA . 34,187 parts In-Stock

1+ parts

$1.550

100+ parts

$0.653

1k+ parts

$0.467

10k+ parts

$0.369

34,187

$1.550

$0.653

$0.467

$0.369

TTI Europe

Germany . 15,000 parts In-Stock

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$0.429

15,000

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$0.429

Future Electronics

Canada . 3,000 parts In-Stock

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$0.800

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$0.800

Verical

USA . 3,000 parts In-Stock

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$0.721

3,000

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$0.721

Chip1Stop

Japan . 3,000 parts In-Stock

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$0.439

3,000

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$0.439

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Chip Stock

USA . 85,043 parts In-Stock

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IBS Electronics

USA . 45,000 parts In-Stock

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$1.122

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$1.122

NAC Semi

USA . 39,000 parts In-Stock

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$2.620

39,000

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$2.620

Cyclops Electronics Ltd

UK . 14,795 parts In-Stock

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14,795

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Vyrian

USA . 10,978 parts In-Stock

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Sensible Micro Corp

USA . 4,639 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Semicontronic

India . 10,776 parts In-Stock

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$0.303

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$0.295

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$0.294

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10,776

$0.303

$0.295

$0.294

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Corohmni

South Africa . 806 parts In-Stock

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$0.617

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$0.617

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Ampacity Inc.

Singapore . 11,020 parts In-Stock

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$0.660

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$0.660

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Aztec Data Supply Inc.

USA . 1,991 parts In-Stock

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$1.455

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RC Electronics

USA . 80,429 parts In-Stock

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Perfect Parts

USA . 53,700 parts In-Stock

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Continental Prestige Electronics

USA . 5,321 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Kepictronics

USA . 2,730 parts In-Stock

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Argo Parts USA

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Aranea Global

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Overview

Discover the superior performance and reliability of the SI6562CDQ-T1-GE3 by Vishay Intertechnology, a top-quality Small Signal Field Effect Transistor. With its innovative design and advanced technology, this product excels in switching applications, offering customers seamless functionality and enhanced efficiency. Whether you're looking for N-CHANNEL or P-CHANNEL transistors, this versatile component with built-in diode elements has you covered. Trust Vishay Intertechnology for cutting-edge solutions that deliver exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and cost-effective.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Offers versatility in circuit design by providing both N-channel and P-channel options for different applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The separate configuration with 2 elements and built-in diode simplifies the circuit design and enhances efficiency.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance.

Surface Mount: YES

Enables easy and convenient installation on the circuit board, saving space and reducing assembly time.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, it can handle higher voltages in the circuit without damage.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement and secure mounting on the circuit board.

Terminal Form: GULL WING

Gull wing terminal form provides good heat dissipation and mechanical strength for reliable performance.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation ensures low power consumption and fast switching speeds.

No. of Elements: 2

Having 2 elements provides flexibility in circuit configuration and allows for more complex designs.

Maximum Drain Current (Abs) (ID): 6.7 A

High maximum drain current rating of 6.7A enables the transistor to handle high current loads with ease.

No. of Terminals: 8

Having 8 terminals allows for more connections and options in the circuit, enhancing functionality.

Maximum Power Dissipation (Abs): 1.7 W

With a maximum power dissipation of 1.7W, the transistor can handle heat dissipation effectively, ensuring reliable operation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board and is suitable for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability in small signal applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, the transistor can withstand high temperatures without performance degradation.

Transistor Element Material: SILICON

Silicon material provides good conductivity and durability, ensuring long-term reliability.

Terminal Finish: MATTE TIN

Matte tin finish ensures good conductivity and solderability for reliable connections.

Maximum Drain-Source On Resistance: 0.022 ohm

Low drain-source on resistance of 0.022 ohm leads to efficient power handling and minimal voltage drop.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit board layout and ease of connection.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI6562CDQ-T1-GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

6.7 A

Maximum Drain Current (ID):

4.2 A

Maximum Drain-Source On Resistance:

.022 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI6562CDQ-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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