Loading...

SI4401DY-T1-E3

Vishay Intertechnology

SI4401DY-T1-E3 by Vishay Intertechnology

SI4401DY-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET with 40V DS Breakdown Voltage, 8.7A ID, and 0.0155 ohm RDS(ON). Ideal for applications requiring high drain current capability in compact designs.

Median Price

$1.104

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 35 parts In-Stock

1+ parts

$1.082

100+ parts

-

1k+ parts

-

10k+ parts

-

35

$1.082

-

-

-

Bas Electronics GmbH & Co. KG

Germany . 3,584 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,584

-

-

-

-

Vyrian

USA . 3,168 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,168

-

-

-

-

Pegasus Components GmbH

Germany . 1,729 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,729

-

-

-

-

Rebound Electronics

UK . 538 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

538

-

-

-

-

Bristol Electronics

USA . 455 parts In-Stock

1+ parts

-

100+ parts

$1.125

1k+ parts

$1.050

10k+ parts

-

455

-

$1.125

$1.050

-

LIBRA Elektronik GmbH

Germany . 401 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

401

-

-

-

-

Sea View Technologies

USA . 226 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

226

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 147 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

147

-

-

-

-

EMSNET

USA . 6 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6

-

-

-

-

Whistler Technology

UK . 5 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 2,709 parts In-Stock

1+ parts

$1.082

100+ parts

-

1k+ parts

-

10k+ parts

$1.060

2,709

$1.082

-

-

$1.060

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$1.082

100+ parts

-

1k+ parts

$1.028

10k+ parts

$1.006

2,000

$1.082

-

$1.028

$1.006

Argo Parts USA

USA . 1,026 parts In-Stock

1+ parts

$1.082

100+ parts

-

1k+ parts

-

10k+ parts

-

1,026

$1.082

-

-

-

Ampacity Inc.

Singapore . 1,178 parts In-Stock

1+ parts

$7.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,178

$7.050

-

-

-

AZTECH Wire

Italy . 214 parts In-Stock

1+ parts

$8.024

100+ parts

-

1k+ parts

-

10k+ parts

-

214

$8.024

-

-

-

Cyclops Electronics Ltd (Excess)

UK . 147 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

147

-

-

-

-

Overview

Discover the Vishay Intertechnology SI4401DY-T1-E3, a top-quality P-CHANNEL Small Signal Field Effect Transistor with a built-in diode. This versatile component offers enhanced performance and reliability, making it ideal for a wide range of applications. With a maximum power dissipation of 3W and a minimum DS breakdown voltage of 40V, this transistor delivers exceptional value and efficiency. Trust Vishay Intertechnology for cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: P-CHANNEL

P-channel FETs can offer lower ON-state resistance compared to N-channel FETs, making them efficient for certain circuit designs.

Minimum DS Breakdown Voltage: 40 V

The high breakdown voltage ensures the transistor can handle higher voltages without breaking down, increasing reliability.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are normally off devices, allowing for better control and efficiency in switching applications.

Maximum Drain Current: 8.7 A

The high drain current capability makes this transistor suitable for applications requiring high power handling.

Maximum Power Dissipation: 3 W

With a high power dissipation rating, this transistor can handle heat effectively, ensuring long-term reliability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high input impedance and fast switching speeds, making it ideal for various applications.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows this transistor to function reliably in a wide range of environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI4401DY-T1-E3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

8.7 A

Maximum Drain Current (ID):

8.7 A

Maximum Drain-Source On Resistance:

.0155 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

3 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

SI4401DY-T1-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20