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SI4401BDY-T1-E3

Vishay Siliconix

SI4401BDY-T1-E3 by Vishay Siliconix

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 8.7 A; No. of Terminals: 8; Minimum DS Breakdown Voltage: 40 V;

Median Price

$1.285

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Chip1Stop

Japan . 1,923 parts In-Stock

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Mouser Electronics

USA . 14,258 parts In-Stock

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$0.951

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Arrow

USA . 5,000 parts In-Stock

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Verical

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TTI

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Freelance Electronics

USA . 530 parts In-Stock

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$0.946

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$0.993

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$0.937

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Nova Conductors

Japan . 73 parts In-Stock

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TME

Poland . 5 parts In-Stock

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$1.060

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$1.500

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Bristol Electronics

USA . 84 parts In-Stock

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$1.800

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$1.116

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Chip Stock

USA . 11,500 parts In-Stock

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Vyrian

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ComSIT Distribution GmbH

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Speed Components Ltd

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Sensible Micro Corp

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Global Solutions Electronics Company

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Classic Components Corporation

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LIBRA Elektronik GmbH

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Semi Source

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Prism Electronics

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Atlantic Semiconductor

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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Inventory MP

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Semicontronic

India . 10,470 parts In-Stock

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Ampacity Inc.

Singapore . 5,490 parts In-Stock

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Aztec Data Supply Inc.

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Continental Prestige Electronics

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Argo Parts USA

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Netroflash

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Advanced Electronics

New Zealand . 900 parts In-Stock

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Corohmni

South Africa . 90 parts In-Stock

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Perfect Parts

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Lucentia Tech

USA . 43,298 parts In-Stock

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RC Electronics

USA . 30,756 parts In-Stock

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Robosynatics

Brazil . 21,649 parts In-Stock

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Infinite Electronics LLP (Excess)

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Authorized Procurement Solutions

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Kepictronics

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Futuretech Components

Singapore . 1,138 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Technical Specifications

Small Signal Field Effect Transistors (FET) SI4401BDY-T1-E3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Siliconix

Specs

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

8.7 A

Maximum Drain-Source On Resistance:

.014 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI4401BDY-T1-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Siliconix

Vishay, through its Siliconix subsidiary, leads the industry in the development of power semiconductor products that improve the efficiency of power management circuitry in end products while reducing space requirements. As the world's number-one brand of low-voltage power MOSFETs (metal-oxide semiconductor field-effect transistors), Vishay Siliconix products play a key role in making handheld and portable electronic systems operate more efficiently from smaller and lighter battery packs. Higher-voltage Vishay Siliconix power MOSFETs are used for applications from electric motor control in industrial systems to converting power in the switches and routers that enable the world's communications networks. Vishay Siliconix power ICs address markets ranging from mobile communications and computing to the fixed telecom infrastructure and include switchmode regulators, linear regulators, and power management devices. A number of devices, built on specialized process flows, are purpose-made for the medical, automotive, and military markets. Vishay Siliconix milestones include the first analog switch, the first analog multiplexer, the first small-outline power MOSFET (LITTLE FOOT®), and the first power MOSFETs built on Trench technology (TrenchFET®). This tradition of innovation continues with new silicon technologies designed to maximize power MOSFET performance. In dc-to-dc conversion and load switching, Vishay Siliconix leads the market with high-density TrenchFET silicon processes and innovative package options for better thermal performance (PowerPAK®, PolarPAK®), smaller footprints (ChipFET®, MICRO FOOT®, PowerPAK SC-70, PowerPAK SC-75), and integration of multiple devices (PowerPAIR®). Vishay Siliconix power ICs focus on delivering the optimal and appropriate level of integration for power management and conversion. Recent innovations include the industry’s most powerful DrMOS solution for managing the core voltage in PCs, servers, and other CPU-based systems, and the new microBUCK™ dc-to-dc converter family, which combines the controller IC, MOSFETs, and bootstrap switch for a buck regulator in a tiny 4-mm2 package. The Vishay Siliconix product portfolio now also features high-voltage planar MOSFETs acquired from International Rectifier. Siliconix was founded in 1962. In 1998, Vishay acquired the Semiconductor Business Group of TEMIC, which included 80% of Siliconix. Vishay purchased the remaining 20% of Siliconix shares in 2005.

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