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SI4464DY-T1-E3

Vishay Intertechnology

SI4464DY-T1-E3 by Vishay Intertechnology

SI4464DY-T1-E3 by Vishay Intertechnology is a N-CHANNEL FET with 200V DS breakdown voltage, 1.7A max drain current, and 0.24 ohm max drain-source on resistance. It is commonly used for switching applications in small outline packages.

Median Price

$0.617

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

RS (Exports)

UK . 1,048 parts In-Stock

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$0.280

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$0.280

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RS Americas

USA . 2,248 parts In-Stock

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$0.680

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$0.680

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Chip1Stop

Japan . 2,500 parts In-Stock

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$1.337

100+ parts

$0.853

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$0.725

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2,500

$1.337

$0.853

$0.725

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Mouser Electronics

USA . 4,916 parts In-Stock

1+ parts

$1.520

100+ parts

$0.755

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$0.606

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$0.556

4,916

$1.520

$0.755

$0.606

$0.556

DigiKey

USA . 13,284 parts In-Stock

1+ parts

$2.350

100+ parts

$1.020

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$0.747

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$2.350

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Arrow

USA . 10,000 parts In-Stock

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$0.450

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$0.450

Verical

USA . 10,000 parts In-Stock

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$0.449

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$0.449

Future Electronics

Canada . 5,000 parts In-Stock

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$0.435

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Avnet

USA . 5,000 parts In-Stock

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$0.617

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$0.617

Distributors (In-Stock)

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Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.750

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150

$0.750

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NAC Semi

USA . 15,000 parts In-Stock

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$0.950

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Vyrian

USA . 5,919 parts In-Stock

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Chip Stock

USA . 4,000 parts In-Stock

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Bristol Electronics

USA . 3,136 parts In-Stock

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$0.492

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$0.367

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$0.341

3,136

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$0.492

$0.367

$0.341

Prism Electronics

USA . 131 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 6,160 parts In-Stock

1+ parts

$0.321

100+ parts

$0.313

1k+ parts

$0.311

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6,160

$0.321

$0.313

$0.311

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Ampacity Inc.

Singapore . 5,912 parts In-Stock

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$0.361

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$0.361

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Allen Electronics Distributors

USA . 2,248 parts In-Stock

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$0.560

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$0.560

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Continental Prestige Electronics

USA . 6,669 parts In-Stock

1+ parts

$0.750

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$0.735

6,669

$0.750

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$0.735

Argo Parts USA

USA . 3,046 parts In-Stock

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$0.750

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3,046

$0.750

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.750

100+ parts

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$0.712

10k+ parts

$0.698

1,000

$0.750

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$0.712

$0.698

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$0.870

100+ parts

$0.800

1k+ parts

$0.750

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1,000

$0.870

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$0.750

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Aztec Data Supply Inc.

USA . 193 parts In-Stock

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$1.400

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$1.400

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Corohmni

South Africa . 443 parts In-Stock

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$1.746

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Microchip USA

USA . 2,026 parts In-Stock

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$3.850

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Authorized Procurement Solutions

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Robosynatics

Brazil . 17,070 parts In-Stock

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Lucentia Tech

USA . 17,070 parts In-Stock

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$1.568

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$1.536

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$1.536

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$1.536

Perfect Parts

USA . 14,208 parts In-Stock

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Kepictronics

USA . 2,008 parts In-Stock

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Glotronic Ltd.

UK . 2,000 parts In-Stock

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Overview

Discover the SI4464DY-T1-E3 by Vishay Intertechnology, a high-quality Small Signal Field Effect Transistor (FET) that offers incredible value and benefits. With its N-CHANNEL polarity and SINGLE configuration with BUILT-IN DIODE, this transistor is perfect for SWITCHING applications. Its ENHANCEMENT MODE operating mode ensures efficient performance, while its METAL-OXIDE SEMICONDUCTOR technology guarantees reliability. With a minimum DS Breakdown Voltage of 200V and a maximum Drain Current of 1.7A, this transistor delivers outstanding power and versatility. Whether you need it for automotive, industrial, or consumer electronics, the SI4464DY-T1-E3 is the ideal solution. Trust Vishay Intertechnology for cutting-edge technology and unparalleled performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product's plastic/epoxy package body material provides durability and protection, making it suitable for various environments.

Polarity or Channel Type: N-CHANNEL

The N-channel polarity or channel type of this product ensures efficient current flow and allows for versatile application in different circuit configurations.

Configuration: SINGLE WITH BUILT-IN DIODE

With a single configuration and a built-in diode, this product offers convenience and flexibility in circuit design and switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this product delivers fast and reliable performance, making it an ideal choice for electronic devices that require efficient switching operations.

Surface Mount: YES

With surface mount capability, this product offers easy installation and integration into circuit boards, enabling streamlined manufacturing processes.

Minimum DS Breakdown Voltage: 200 V

The minimum DS breakdown voltage of 200 V ensures robust operation and protection against voltage spikes, making this product suitable for high-power applications.

Package Shape: RECTANGULAR

This rectangular package shape provides compactness and efficient use of board space, allowing for higher component density and optimizing overall system design.

Terminal Form: GULL WING

The gull-wing terminal form of this product offers strong solder joint connections, enhancing reliability and ensuring secure operation even in demanding environments.

Operating Mode: ENHANCEMENT MODE

Operating in enhancement mode, this product allows for precise control and efficient signal amplification, making it suitable for applications requiring low power consumption and high gain.

No. of Elements: 1

With a single element, this product simplifies circuit design and integration, reducing complexity and enhancing overall system efficiency.

Maximum Drain Current (Abs) (ID): 1.7 A

With a maximum drain current of 1.7 A, this product is capable of handling high current loads, making it suitable for power management and switching applications.

No. of Terminals: 8

The 8-terminal configuration of this product offers versatility in circuit connections and allows for easy integration into various electronic systems.

Maximum Power Dissipation (Abs): 2.5 W

With a maximum power dissipation of 2.5 W, this product can handle significant power levels, ensuring reliable performance and durability.

Package Style (Meter): SMALL OUTLINE

The small outline package style of this product provides space-saving benefits and compatibility with automated production processes, making it a preferred choice for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizing metal-oxide semiconductor technology, this product offers efficient performance, low power consumption, and high switching speed, making it suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

Designed to withstand temperatures up to 150°C, this product ensures reliable operation even in high-temperature environments.

Transistor Element Material: SILICON

Made from silicon, this product offers excellent electrical properties, high thermal conductivity, and durability, enabling optimal performance and long-lasting operation.

Terminal Finish: Pure Matte Tin (Sn) - annealed

The pure matte tin (Sn) annealed terminal finish of this product ensures reliable solder joint formation, enhancing electrical connections and overall product longevity.

Maximum Drain-Source On Resistance: 0.24 ohm

With a maximum drain-source on resistance of 0.24 ohm, this product minimizes power losses and improves efficiency, making it suitable for applications requiring high-performance switching.

Terminal Position: DUAL

The dual terminal position of this product provides flexibility and facilitates easy connections, enabling convenient integration into various circuit configurations.

Moisture Sensitivity Level (MSL): 1

With a moisture sensitivity level of 1, this product demonstrates excellent moisture resistance and reliability, ensuring consistent performance even in humid environments.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this product ensures efficient soldering and assembly processes without compromising product integrity.

Peak Reflow Temperature °C: 260

Designed to withstand peak reflow temperatures of up to 260°C, this product is suitable for lead-free soldering processes, ensuring reliable connections and high-quality manufacturing.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI4464DY-T1-E3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (Abs) (ID):

1.7 A

Maximum Drain Current (ID):

1.7 A

Maximum Drain-Source On Resistance:

.24 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Pure Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI4464DY-T1-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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