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IRF3000PBF

International Rectifier

IRF3000PBF by International Rectifier

IRF3000PBF by International Rectifier is a N-CHANNEL FET with 300V DS Breakdown Voltage, ideal for SWITCHING applications. It features 1.6A Drain Current, 0.4 ohm On Resistance, and operates at up to 150°C. This SMALL OUTLINE transistor has GULL WING terminals and is designed for ENHANCEMENT MODE operation.

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AZTECH Wire

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Semicontronic

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RC Electronics

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Overview

Unlock the power of efficient switching with the IRF3000PBF by International Rectifier. Designed with high-quality materials and advanced technology, this N-Channel Field Effect Transistor offers reliability and optimal performance in a variety of applications. With a maximum drain current of 1.6 A and a minimum breakdown voltage of 300 V, this small signal FET is perfect for enhancing your circuit designs. Say goodbye to overheating and hello to increased power dissipation with this innovative solution. Upgrade your electronics today with the IRF3000PBF and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material which helps in reducing overall weight of the product.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are known for their higher electron mobility and faster switching speeds compared to P-channel transistors.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode provides reverse polarity protection and simplifies circuit design.

Transistor Application: SWITCHING

Optimized for switching applications with fast turn-on and turn-off characteristics.

Surface Mount: YES

Easy to mount on PCBs, saving space and simplifying assembly process.

Minimum DS Breakdown Voltage: 300 V

High breakdown voltage ensures reliability and robustness in high voltage applications.

Maximum Drain Current (Abs): 1.6 A

Capability to handle higher drain currents for demanding applications.

Maximum Power Dissipation (Abs): 2.5 W

Efficient power dissipation capability to prevent overheating and ensure reliability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFETs offer high input impedance, low power consumption, and fast switching speeds.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance or reliability.

Technical Specifications

Small Signal Field Effect Transistors (FET) IRF3000PBF attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from International Rectifier

Specs

Minimum DS Breakdown Voltage:

300 V

Maximum Drain Current (Abs) (ID):

1.6 A

Maximum Drain Current (ID):

.0016 A

Maximum Drain-Source On Resistance:

.4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRF3000PBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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