Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
STL73D-AP
STMicroelectronics
STL73D-AP by STMicroelectronics is a NPN BJT transistor with 400V max collector-emitter voltage, 1.5A max collector current, and 1.5W max power dissipation. Ideal for switching applications due to its single configuration with built-in diode and fast turn-off time of 4700ns. Package style is cylindrical with matte tin terminal finish.
1.5 A
400 V
SINGLE WITH BUILT-IN DIODE
4
TO-92
O-PBCY-T3
e3
1
3
150 Cel
PLASTIC/EPOXY
ROUND
CYLINDRICAL
NPN
1.5 W
Not Qualified
Other Transistors
NO
MATTE TIN
THROUGH-HOLE
BOTTOM
SWITCHING
SILICON
4700 ns
BC640-016G
Onsemi
BC640-016G by Onsemi is a PNP BJT with 3 terminals, max. power dissipation of 1.5W, and max. collector-emitter voltage of 80V. Ideal for applications requiring a min DC current gain of 25 (hFE), it operates at up to 150°C and has a nominal transition frequency of 150MHz.
.5 A
80 V
SINGLE
25
TO-226AA
e1
260
PNP
TIN SILVER COPPER
150 MHz
2DA1971-13
Diodes Incorporated
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .5 A;
HIGH RELIABILITY
COLLECTOR
140
R-PSSO-F3
-55 Cel
RECTANGULAR
SMALL OUTLINE
AEC-Q101
YES
FLAT
30
75 MHz
ZTX651QSTZ
ZTX651QSTZ by Diodes Inc. is a NPN BJT with 1.5W power dissipation, 100 hFE, and 2A collector current. Ideal for applications requiring high-speed switching in temperatures up to 200°C such as amplifiers and signal processing circuits.
2 A
100
200 Cel
140 MHz
STX13003G
STX13003G by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1.5W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient circuit designs in various electronics.
1 A
5
STX13003
STX13003 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications. It has a max. power dissipation of 1.5W and max. collector current of 1A, suitable for circuits requiring high voltage and current handling capabilities in a cylindrical package style.
STX83003
STX83003 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1.5 W, operates up to 150 °C, and supports collector-emitter voltages up to 400 V. Its cylindrical plastic package ensures reliable performance in various circuits.
O-PBCY-W3
WIRE
2N5087G
2N5087G by Onsemi is a PNP BJT transistor with max. power dissipation of 1.5W, hFE of 250, and max. collector-emitter voltage of 50V. Ideal for amplifier applications due to its high transition frequency of 40MHz and max. operating temp. of 150°C in a cylindrical package style.
.05 A
50 V
250
AMPLIFIER
40 MHz
2N5401RLRAG
2N5401RLRAG by Onsemi is a PNP BJT with max. VCE of 150V, IC of 0.6A, and hFE of 50. Ideal for amplifier applications due to its max. power dissipation of 1.5W and fT of 100MHz in a cylindrical package with through-hole terminals.
.6 A
150 V
50
Tin/Silver/Copper (Sn/Ag/Cu)
40
100 MHz
2N5550RLRPG
2N5550RLRPG by Onsemi is a NPN BJT transistor with 140V VCEO, 0.6A IC, and 100MHz fT. Ideal for amplifier applications due to its 1.5W Ptot, hFE of 20, and operating temp up to 150 °C. Features through-hole terminals in a cylindrical package shape.
140 V
20
2N6520RLRAG
2N6520RLRAG by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 350V, max. power dissipation of 1.5W, and min. DC current gain of 15. Ideal for switching applications due to its high transition frequency of 40MHz and low turn-on time of 200ns. Package style is cylindrical with through-hole terminals for easy mounting.
350 V
15
3500 ns
200 ns
BC368ZL1G
BC368ZL1G by Onsemi is a NPN BJT transistor with 1A IC, 20V VCE, and 65MHz fT. Ideal for amplifier applications due to its high hFE of 85 and max power dissipation of 1.5W. The package is cylindrical with through-hole terminals, making it suitable for various electronic designs.
20 V
85
65 MHz
BC548BZL1G
BC548BZL1G by Onsemi is a NPN BJT transistor with hFE of 200, VCEO of 30V, and IC of 0.1A. Ideal for amplifier applications, it has a max power dissipation of 1.5W and operates up to 150°C. The package style is cylindrical with through-hole terminals in a plastic/epoxy body.
.1 A
30 V
200
300 MHz
2N3904RLRPG
2N3904RLRPG by Onsemi is a NPN BJT with max. power dissipation of 1.5W, hFE of 30, and fT of 300MHz. Ideal for low-power applications in electronics due to its max. collector-emitter voltage of 40V and max. collector current of 0.2A.
.2 A
40 V
250 ns
70 ns
2N3906RLRMG
2N3906RLRMG by Onsemi is a PNP BJT with max. power dissipation of 1.5W, hFE of 30, and max. collector-emitter voltage of 40V. Ideal for applications requiring low current amplification in through-hole configurations at up to 150°C operating temperature.
250 MHz
300 ns
2N4401RLRPG
2N4401RLRPG by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 40, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (35ns/255ns) and high transition frequency (250MHz).
255 ns
35 ns
2N5089G
2N5089G by Onsemi is a NPN BJT with max. power dissipation of 1.5W, hFE of 450, and fT of 50MHz. Ideal for amplifier applications due to its max. collector-emitter voltage of 25V and max. collector current of 0.05A in a cylindrical package style.
25 V
450
50 MHz
2N6426G
2N6426G by Onsemi is a NPN Darlington BJT with max. power dissipation of 1.5W, hFE of 20000, and VCE of 40V. Ideal for applications requiring high current gain and voltage amplification in through-hole configurations.
DARLINGTON
20000
2N6427RLRAG
2N6427RLRAG by Onsemi is a NPN BJT with 40V VCEO, 0.5A IC, and 14000 hFE. Ideal for applications requiring high DC current gain like amplifiers and drivers due to its Darlington configuration. Package style is cylindrical with through-hole terminals for easy mounting.
14000
PN2907AG
PN2907AG by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 1.5W, and hFE of 50. Ideal for applications requiring a max collector-emitter voltage of 60V, such as amplifiers and signal processing circuits due to its high transition frequency of 200MHz.
60 V
200 MHz
100 ns
45 ns
MPS650RLRAG
MPS650RLRAG by Onsemi is a NPN BJT transistor with 40V VCEO, 2A IC, and 1.5W Ptot. Ideal for amplifier applications due to its hFE of 40 and fT of 75MHz. Packaged in cylindrical shape with through-hole terminals for easy installation.
MPS750G
MPS750G by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 1.5W, and max. collector current of 2A. Ideal for amplifier applications, it has a min. DC current gain of 40 (hFE), operates up to 150 °C, and offers a nominal transition frequency of 75MHz in a cylindrical package style.
MPS750RLRPG
MPS750RLRPG by Onsemi is a PNP BJT with 40V VCEO, 2A IC, and 75MHz fT. Ideal for amplifier applications due to its 1.5W power dissipation, SILICON material, and THROUGH-HOLE terminals in a CYLINDRICAL package style. Operating up to 150 °C, it offers reliable performance in various electronic designs.
MPS751RLRAG
MPS751RLRAG by Onsemi is a PNP BJT with 3 terminals, 1.5W power dissipation, and 60V collector-emitter voltage. Ideal for amplifier applications, it has a DC current gain of 40 and operates at up to 150 °C. The transistor's SILICON element ensures reliable performance in various electronic circuits.
MPS751ZL1G
MPS751ZL1G by Onsemi is a PNP BJT transistor with 60V VCEO, 2A IC, and 75MHz fT. Ideal for amplifier applications due to its 1.5W power dissipation, hFE of 40, and operating temperature up to 150 °C. Packaged in a cylindrical body with through-hole terminals for easy installation.
2N4403RLRMG
2N4403RLRMG by Onsemi is a PNP BJT transistor with max. power dissipation of 1.5W, hFE of 100, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 255ns) and high transition frequency (fT: 200MHz).
BC337-40RL1G
BC337-40RL1G by Onsemi is a NPN BJT transistor with hFE of 250, IC of 0.8A, and VCE of 45V. Ideal for amplifier applications, it has a max power dissipation of 1.5W and operates b/w -55 to 150 °C. Package style is cylindrical with through-hole terminals.
EUROPEAN PART NUMBER
.8 A
45 V
210 MHz
BC638ZL1G
BC638ZL1G by Onsemi is a PNP BJT with 3 terminals, max. power dissipation of 1.5W, and max. collector-emitter voltage of 60V. Ideal for applications requiring a single configuration transistor with a min DC current gain of 40 (hFE), such as amplifiers or signal processing circuits.
BC640ZL1G
BC640ZL1G by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 1.5W, and max collector-emitter voltage of 80V. Ideal for applications requiring a min DC current gain of 40, such as amplifiers or signal processing circuits due to its high transition frequency of 150MHz.
MPSA42RLRMG
MPSA42RLRMG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 300V and max. collector current of 0.5A, ideal for amplifier applications. With a min. DC current gain of 40 and max. power dissipation of 1.5W, it operates at up to 150°C making it suitable for various electronic designs requiring high performance in a cylindrical package style.
300 V
MPSA63RLRAG
MPSA63RLRAG by Onsemi is a PNP Darlington BJT with 1.5W power dissipation, hFE of 10000, and max temp of 150 °C. Ideal for switching applications due to its 30V VCE, 0.5A IC, and high transition frequency of 125MHz in a cylindrical package.
10000
125 MHz
MPSA63G
MPSA63G by Onsemi is a PNP BJT transistor with a Darlington configuration. It has a max power dissipation of 1.5W, hFE of 10000, and operates up to 150°C. Ideal for switching applications due to its high collector current of 0.5A and max voltage of 30V.
MPSA64G
The Onsemi MPSA64G is a PNP Darlington transistor with 3 terminals, ideal for switching applications. With a max power dissipation of 1.5W and max collector-emitter voltage of 30V, it operates at up to 150 °C. Featuring a min DC current gain of 20k and nominal transition frequency of 125MHz, it is suitable for high-performance electronic circuits.
MPSA64RLRAG
MPSA64RLRAG by Onsemi is a PNP BJT with 30V VCEO, 0.5A IC, and 1.5W power dissipation. Ideal for switching applications, it features a high DC current gain of 20k hFE and operates up to 150 °C. Its Darlington configuration makes it suitable for various electronic designs requiring reliable performance in through-hole packages.
MPSA64RLRMG
MPSA64RLRMG by Onsemi is a PNP Darlington BJT with 3 terminals, hFE of 20000, and max. power dissipation of 1.5W. Ideal for switching applications, it operates at up to 150 °C with VCE of 30V. The transistor's SILICON material and cylindrical package make it suitable for high-frequency operations up to 125MHz.
MPSA13RLRAG
MPSA13RLRAG by Onsemi is a NPN Darlington transistor with 3 terminals, ideal for amplifier applications. It offers a high DC current gain of 10k and can handle up to 1.5W power dissipation. With a max operating temperature of 150°C and collector-emitter voltage of 30V, it is suitable for various electronic circuits requiring high gain and power handling capabilities.
MPSA13RLRMG
MPSA13RLRMG by Onsemi is a NPN Darlington transistor with a max power dissipation of 1.5W and a min DC current gain of 10,000. It is commonly used as an amplifier in various applications.
MPSA13ZL1G
MPSA13ZL1G by Onsemi is a NPN Darlington transistor with a max power dissipation of 1.5W and a min DC current gain of 10000. It is commonly used as an amplifier in various applications.
MPSA14RLRPG
MPSA14RLRPG by Onsemi is a NPN Darlington BJT with 3 terminals, ideal for amplifier applications. It offers a high DC current gain of 20k and can handle up to 1.5W power dissipation. With a max operating temp of 150 °C and Vce of 30V, it's suitable for various electronic designs requiring high performance in a cylindrical package.
MPSA42RL1G
MPSA42RL1G by Onsemi is a NPN BJT with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for low-power applications, it has a max power dissipation of 1.5W and operates b/w -55°C to 150°C. The through-hole package with tin silver copper finish makes it suitable for various electronic designs.
MPSA42RLRAG
MPSA42RLRAG by Onsemi is a NPN BJT with max. power dissipation of 1.5W, hFE of 40, and VCE of 300V. Ideal for applications requiring high voltage switching in through-hole configurations at up to 150°C operating temperature.
MPSA42RLRFG
MPSA42RLRFG by Onsemi is a NPN BJT with 300V VCEO, 0.5A IC, and 1.5W Ptot. Ideal for low-power applications, it has hFE of 40 and fT of 50MHz. Its through-hole package makes it suitable for various electronic designs.
MPSA42ZL1G
MPSA42ZL1G by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 40, and VCE of 300V. Ideal for applications requiring high collector current (0.5A), it operates up to 150°C and has a transition frequency of 50MHz.
MPSA43G
MPSA43G by Onsemi is a NPN BJT with 200V VCEO, 50MHz fT, and 1.5W Ptot. Ideal for low-power applications, it features hFE of 40 and operates up to 150°C. Commonly used in signal amplification due to its small signal capabilities in through-hole package.
200 V
MPSA43RLRAG
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .05 A;
MPSA92RL1G
MPSA92RL1G by Onsemi is a PNP BJT with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for low-power applications requiring high DC current gain and operating temperatures from -55 to 150 °C. Package style: Cylindrical, terminals: Through-hole, suitable for various electronic designs.
MPSA92ZL1G
MPSA92ZL1G by Onsemi is a PNP BJT with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for small signal applications in electronics due to its high DC current gain and low power dissipation of 1.5W. The through-hole package with bottom terminal position makes it easy to integrate into circuit designs.
MPSA93G
MPSA93G by Onsemi is a PNP BJT with 200V VCEO, 0.5A IC, and 1.5W power dissipation. Ideal for low-power applications, it has a min hFE of 25 and operates up to 150 °C. Commonly used in signal amplification circuits due to its high transition frequency of 50MHz.
© 2023 All rights reserved
